The effect of Co ion implantation on Ge1−xMnx films

Ge_1−xMn_x (x = 0, 0.013, 0.0226, 0.0339, 0.0565, 0.0678, 0.0904, 0.113) films prepared by magnetron sputtering at 773 K had a Ge cubic structure except for x = 0.1130. Co ion implantation into these films can effectively prevent the formation of a second phase. Both single-doped and co-doped samples were ferromagnetic at room temperature. The d-d exchange interaction between the interstitial Mn (MnT) and the substituted Mn (Mn_Ge) resulted in ferromagnetism in the sputtered films. Since Co ion implantation destroyed the Mn_T-Mn_Ge-Mn_T complex, the saturated magnetization decreased. Hall measurements revealed that the Co ion implanted films were n-type semiconductors, and the anomalous Hall Effect (AHE) suggested the ferromagnetism was carrier-mediated in the implanted films.     

Studies on the Voltammetric Behavior of Nicardipine Hydrochloride and its Voltammetric Determination at the Co/GC Modified Electrode

ＩｎｔｒｏｄｕｃｔｉｏｎＴｈｅｔｅｃｈｎｉｑｕｅｏｆｉｏｎｉｍｐｌａｎｔａｔｉｏｎｈａｓｂｅｅｎｄｅｖｅｌｏｐｅｄａｓａｍｅａｎｓｏｆｉｎｔｒｏｄｕｃｔｉｎｇｆｏｒｅｉｇｎａｔｏｍｓｉｎｔｏｔｈｅｓｕｒｆａｃｅｌａｙｅｒｓｏｆａｓｏｌｉｄ．Ｔｈｉｓｔ...     

Conductive and optical properties of PPV modified by N+ ion implantation

In this article, a soluble poly[2‐methoxy‐5‐(3′‐methyl)butoxy]‐p‐phenylene vinylene (MMB‐PPV) was synthesized by dehydrochlorination reaction and the MMB‐PPV film was implanted by nitrogen ions (N⁺) with the ion dose and energy in the range of 3.8 × 10¹⁵ to 9.6 × 10¹⁶ ions/cm² and 15–35 keV, respectively. The surface conductivity, optical absorption, optical band gap (E_g) of modified MMB‐PPV film were studied, and the third‐order nonlinear optical susceptibility (χ⁽³⁾) as well as its environmental stability of modified MMB‐PPV film were also measured by degenerate four‐wave mixing system. The results showed that the surface conductivity of MMB‐PPV film was up to 3.2 × 10^?2 S when ion implantation was performed with the energy of 35 keV at an ion dose of 9.6 × 10¹⁶ ions/cm², which was seven order of magnitude higher than that of the pristine film. UV‐Vis absorption spectra demonstrated that the optical absorption of MMB‐PPV film was enhanced gradually in the visible region followed by a red shift of optical absorption threshold and the E_g value was reduced from 2.12 eV to 1.59 eV with the increase of ion dose and energy. The maximum χ⁽³⁾ value of 2.45 × 10^?8 esu for modified MMB‐PPV film was obtained with the ion energy of 20 keV at an ion dose of 3.8 × 10¹⁶ ions/cm², which was almost 33 times larger than that for pristine film. In comparison to the reduction of 17% in the χ⁽³⁾ value of pristine MMB‐PPV film, the maximum χ⁽³⁾ value of 2.45 × 10^?8 esu for modified MMB‐PPV film decreased by over 5.3% when they had been exposed under the same ambient conditions for 90 days. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 48: 2072–2077, 2010     

Paramagnetic properties of ion-implanted polymer layers

Films of polyethylene, polyethylene terephthalate, and polyamine-6 implanted with B⁺ and N⁺ ions with an energy of 100 keV are investigated by an EPR method in a dose interval of 1·10¹⁴–1·10¹⁷ cm⁻². It is shown that paramagnetic centers with g=2.0025 formed in the implanted polymers have a nature similar to the nature of paramagnetic centers of pyrolized and initially conducting polymers. Correspondence of the character of the variation in paramagnetic characteristics of the modified polymers to the model proposed earlier for the formation of pyrocarbon “drops” in ion implantation is revealed. The relaxation times for paramagnetic centers in the implanted polymer films are calculated and assumptions are made about the formation of a quasi-two-dimensional electron gas as well as the possibility of magnetic ordering in polymer-film layers modified by high-dosage implantation. The effect of oxygen on the electron states of the implanted polymer specimens is studied. Belarusian State University, 4, Skorina Ave., Minsk, 220050 Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 4, pp. 562–567, July–August, 1998.     

Ag离子注入非晶SiO2的光学吸收、拉曼谱和透射电镜研究

能量为200keV的Ag离子，以1×10¹⁶，5×10¹⁶，1×10¹⁷ cm^-2的剂量分别注入到非晶SiO₂玻璃，光学吸收谱显示：注入剂量为1×10¹⁶ cm^-2的样品的光吸收谱为洛伦兹曲线，与Mie理论模拟的曲线形状一致；注入剂量较大的5×10¹⁶，1×10¹⁷ cm^-2的谱线共振吸收增强，峰位红移并出现伴峰. 透射电镜观察分析表明，注入剂量不同的样品中形成的纳米颗粒的大小、形状、分布都不同，注入剂量较大的还会产生明显的表面溅射效应，这些因素都会影响共振吸收的峰形、峰位和峰强. 当注入剂量达到1×10¹⁷ cm^-2时，Ag纳米颗粒内部可能还形成了杂质团簇. 关键词： 离子注入 纳米颗粒 共振吸收 红移     

Recent Emission Channeling Studies in Wide Band Gap Semiconductors

We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.     

Effect of void formation during MEVVA tungsten ion implantation on the microstructure and surface properties of H13 die steel

H13 die steel was implanted with tungsten using a metal vapour vacuum arc (MEVVA) ion source. When the pulsed beam current density of tungsten ions increased to 6mA?cm^-2, some voids appeared in the high voltage electron microscope (HVEM) micrograph, which would disappear at an annealing temperature of 600℃. HVEM and x-ray diffraction were used for observing the phase structure of the annealed and un-annealed H13 steel after the steel was implanted. Results of wear and hardness tests indicated that whether the voids appear significantly influences the hardness and wear of H13 steel. Reasons for the formation of voids and the relation between the surface mechanical property and voids are discussed in terms of collision theory.     

Implantation of the 111In/Cd Probe as InO− Ion for Radioisotope Tracer Studies

A radioisotope ion implanter has been developed using a cesium-sputtering, negative ion source, which offers versatility and sustained operation. Employing the molecular ¹¹¹In¹⁶O⁻ ion, μCi activities of the radioisotope probe ¹¹¹In/Cd have been implanted into different material hosts. The implanted tracer activity has been shown to be sufficient for LTNO, NMRON and PAC. A new NMRON resonance for ¹¹¹InAg was observed at 75.08 MHz. In₂O₃ powder performed well as the radioisotope carrier in the ion source, with the ratio of radioisotope and parasitic ion current being typically 4 × 10⁻⁴.     

注入Si中的稀土离子Er3+的光学特性

用离子注入方法,将稀土离子Er3+注入到n-Si单晶中,通过对其低温(77K)光致发光光谱的测量,研究其光学特性.结果表明,注入剂量控制在1×1012cm-2～1×1015cm-2范围,退火温度控制在900℃～1100℃时,样品的主要发光峰值位于1.54μm左右.研究了样品的光致发光光谱随注入剂量、退火温度的变化关系,给出峰值在1.54μm附近的未分辨开的谱线的半宽为16.4meV.     

氮离子束注入对新疆春小麦M1代生物学效应的影响

为了探索离子束诱变育种的合适剂量,用5种剂量处理2个品种,对两个品种的出苗率、分蘖率、小穗数、穗粒数、千粒重、有效分蘖率进行了分析,结果表明剂量为2～4×1016N+/cm2处理对新疆春小麦适宜.