Zn离子注入和退火对ZnO薄膜光学性能的影响

 利用溶胶凝胶方法在石英玻璃衬底上制备了ZnO薄膜，将能量56 keV、剂量1×10¹⁷ cm^-2的Zn离子注入到薄膜中。离子注入后，薄膜在500~900 ℃的氩气中退火，利用X射线衍射谱、光致发光谱和光吸收谱研究了离子注入和退火对ZnO薄膜结构和光学性质的影响。结果显示：衍射峰在约700 ℃退火后得到恢复；当退火温度小于600 ℃时，吸收边随着退火温度的提高发生蓝移，超过600 ℃时，吸收边随着退火温度的提高发生红移；近带边激子发光和深能级缺陷发光都随退火温度的提高而增强。     

Corrosion behavior of low energy,high temperature nitrogen ion-implanted AISI 304 stainless steel

This work presents the results of a low-energy nitrogen ion implantation of AISI 304 type stainless steel (SS) at a moderate temperature of about 500°C. The nitrogen ions are extracted from a Kauffman-type ion source at an energy of 30 keV, and ion current density of 100 μA cm⁻². Nitrogen ion concentration of 6 × 10¹⁷, 8 × 10¹⁷ and 10¹⁸ ions cm⁻², were selected for our study. The X-ray diffraction results show the formation of CrN polycrystalline phase after nitrogen bombardment and a change of crystallinity due to the change in nitrogen ion concentration. The secondary ion mass spectrometry (SIMS) results show the formation of CrN phases too. Corrosion test has shown that corrosion resistance is enhanced by increasing nitrogen ion concentration.      

Anisotropic ferromagnetism induced in rutile single crystals by Co implantation

The magnetic and electrical properties of Co-implanted single crystalline TiO₂ rutile are presented. For fluences of the order of 10¹⁷ cm^-2 and implantation energy of 150 keV the maximum atomic concentration of cobalt is 13 at% at a depth of 65 nm from the surface. The as implanted single crystals exhibit superparamagnetic behaviour attributed to the formation of nanosized cobalt clusters. After annealing at 1073 K an anisotropic ferromagnetic behaviour emerges with the easy magnetization axis lying in the (001) plane of rutile. The ferromagnetic behaviour is associated with oriented cobalt aggregates. Electrical conductivity of the implanted samples annealed in vacuum also exhibits anisotropic behaviour at low temperatures, but no magnetoresistive effects were detected.     

低能N+注入植物种子射程分布的模拟计算

伴随着离子束生物技术的广泛应用, 国内许多单位开展了低能离子注入植物种子的实验研究. 其中关于低能离子注入植物种子诱变的物理机理, 集中在离子注入的深度-浓度分布上. 一些单位直接使用纵向非静态(LSS)理论和TRIM程序来计算低能离子注入植物种子的深度-浓度分布, 却发现计算结果与实验测量结果相差甚远. 所以在对植物种子靶材料进行处理和对LSS理论进行修正的基础上, 在二维近似情况下, 用蒙特卡罗方法分别模拟计算了200keV V⁺和20keV Ti⁺注入花生和棉花种子的射程分布, 得到了与实验结果较符合的曲线. 在此模型基础上, 计算了同样初始条件和理论计算模型下无法从实验上测量的N⁺注入植物种子的射程分布, 初步地为低能N⁺注入植物种子射程分布提供了一种理论计算方法.     

离子注入SiO_2玻璃的光吸收研究

本文用卢瑟福背散射和光吸收技术研究了高剂量Ag离子注入SiO_2玻璃以及退火后的状况.吸收光谱测量表明,注入的Ag离子聚集形成了胶态粒子,其等离子共振峰的极大值在400nm处.运用米(Mie)理论和德拜(Doyle)方法,根据测得的等离子共振峰的光宽度,估算出Ag胶态粒子的半径约为18(?).     

β-NMR in II–VI semiconductors

β-active probe nuclei are implanted in nominally undoped ZnSe crystals. β-radiation detected nuclear magnetic resonance (β-NMR) studies are described for two different probe nuclei, ⁸Li and ¹²B. This way, the implantation behavior of two “opposite”dopants, one acceptor (Li) and one donor (B) can be characterized by the same microscopic technique. Such characterizations are attempted in terms of the structure of intermediate or final lattice sites, defect charge states, or the kinetics of defect reactions and site changes. This revised version was published online in July 2006 with corrections to the Cover Date.     

Optical spectroscopy study of damage evolution in 6H-SiC by H_2~+ implantation

Lattice defects induced by ion implantation into Si C have been widely investigated in the decades by various techniques. One of the non-destructive techniques suitable to study the lattice defects in Si C is the optical characterization. In this work, confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-ke V H_2~+ implantation and thermal treatment in the microstructure of 6 H-Si C single crystal. The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asymmetry of Raman-scattering peaks. The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence. The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700℃ to 1100℃. The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study.     

Mechanism of defect evolution in H+ and He+ implanted InP

The defect evolution in InP with the 75 keV H⁺ and 115 keV He⁺ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He⁺ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H⁺ implanted InP. After annealing, the H⁺ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H₂ molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.     

辣根过氧化酶在磁性纳米修饰的离子注入电极上的电化学和电催化行为

辣根过氧化酶(HRP)在Co/NH2/ITO离子注入电极上有一对良好的氧化还原峰,峰电位分别为Epc=-0.2 V,Epa=-0.01 V(vsAg/AgCl)。该修饰电极对H2O2具有催化作用,可以用作H2O2的生物传感器,峰电流与H2O2的浓度分别在1.0×10-10~2.0×10-8mol/L和2.0×10-8~1.0×10-7mol/L范围内呈线性关系,线性回归方程分别为Ip(mA)=2.2986+0.06632c(nmol/L)和Ip(mA)=3.5788+7.3053E-4c(nmol/L),相关系数分别为0.9972和0.9688。检出限为1.0×10-10mol/L。     

铒离子注入碳化硅的射程和退火行为研究

用300—500 keV能量的铒(Er)离子注入碳化硅(6H-SiC)晶体中,利用卢瑟福背散射技术研究了剂量为5×10¹⁵ cm^-2 的Er离子注入6H-SiC晶体的平均投影射程R_p和射程离散ΔR_p,将测出的实验值和TRIM软件得到的理论模拟值进行了比较,发现R_p的实验值与理论值符合较好,ΔR_p的实验值和理论值差别大一些 关键词： 离子注入 投影射程和射程离散 退火行为 卢瑟福背散射技术