Carrier removal by implanted IONS in GaAs

Abstract

A model for calculation of the range distribution of energetic ions with taking into account the channeling effect is proposed. The measurement of the depth distributions of boron ions in silicon crystals implanted at 13.6 and 91 MeV revealed significant difference between the measured and the calculated range profiles when the channeling effects have not been included in the calculation. In spite of deminishing the critical angles of channeling with growing ion energy the probability of the capture of ions into the channeling regime is significant in case of high energy implantation even when the incident angles are 7–10° off the main crystallographic directions.     

Effect of Nb,Ti, and W ion implantation on surface properties and cell compatibility of silicon carbide

Silicon carbide is considered as a bio-inert semiconductor material; consequently, it has been proposed for potential applications in human body implantation. In this study, we study the effect of implanting different metal ions on the surface properties of silicon carbide single crystal. The valence states of the elements and the surface roughness of implanted SiC were studied using X-ray photoelectron spectroscopy and atomic force microscope, respectively. Osteoblastic MG-63 cells were utilized to characterize the cytocompatibility of ion implanted SiC. The results show that after Nb ion implantation on the SiC surface, it mainly exists in the form of Nb–C bond, Nb–O bond, and a small amount of metallic niobium. The titanium implanted on SiC primarily forms Ti-C bond and Ti-O bond. The tungsten implanted on SiC mostly presents as metallic tungsten and W–O bond. The roughness of silicon carbide single crystal is improved by ion implantation of all three metal ions. Ion implantation of titanium and niobium can improve the cell compatibility and hydrophilicity of silicon carbide, whereas ion implantation of tungsten reduces the cell compatibility and hydrophilicity of silicon carbide.     

单晶金刚石p型和n型掺杂的研究

超宽禁带半导体材料金刚石在热导率、载流子迁移率和击穿场强等方面表现出优异的性质,在功率电子学领域具有广阔的应用前景。实现p型和n型导电是制备金刚石半导体器件的基础要求,其中p型金刚石的发展较为成熟,主流的掺杂元素是硼,但在高掺杂时存在空穴迁移率迅速下降的问题;n型金刚石目前主流的掺杂元素是磷,还存在杂质能级深、电离能较大的问题,以及掺杂之后金刚石晶体中的缺陷造成载流子浓度和迁移率都比较低,电阻率难以达到器件的要求。因此制备高质量的p型和n型金刚石成为研究者关注的焦点。本文主要介绍金刚石独特的物理性质,概述化学气相沉积法和离子注入法实现金刚石掺杂的基本原理和参数指标,进而回顾两种方法进行单晶金刚石薄膜p型和n型掺杂的研究进展,系统总结了其面临的问题并对未来方向进行了展望。     

应用射线束制备可见光响应的TiO2薄膜

 由溶胶-凝胶法制备了TiO2薄膜. 为了改善TiO2对光的利用效率,采用过渡金属离子(V+和Cr+)注入和电子束辐照沉积贵金属纳米颗粒(Ag和Pt)两种射线束技术对TiO2薄膜进行改性. 紫外-可见光谱表明,两种射线束技术改性的TiO2薄膜的吸收光谱都发生了红移,说明这两种方法都是拓展TiO2吸收光谱的有效手段. 通过光催化降解甲基橙实验,比较了两种方法对TiO2可见光光催化能力的拓展情况,结果表明,两种方法均可显著提高TiO2在可见光作用下的光催化活性.     

Development toward a double focusing isotopic separator for noble gas isotope enrichment

A double focusing sector field mass filter used in Nier–Johnson geometry has been built in order to perform Kr isotope enrichment for ⁸¹Kr and ⁸⁵Kr isotopes. The principle consists in implanting Kr⁺ ions accelerated at 7 keV in Al foils after separation using the magnetic sector. A specific ion source has been designed capable of generating high Kr⁺ ion beams (>0.5 μA) to transfer into the collecting Al foils in 3 to 5 h significant fractions of large Kr samples (10¹⁵ to 10¹⁶ atoms) initially introduced in the instrument. Implanted Kr isotopes can be further selectively released from the Al foil by surface ablation using an infrared laser beam. Implantation yields and enrichment factors are measured using a conventional mass spectrometer. Copyright © 2016 John Wiley & Sons, Ltd.     

Application of a synchrotron microprobe to the analytical characterization of ion-implanted material

A synchrotron microprobe has been used to characterize ion implantations of nickel and cobalt in silicon (100) or (111) wafers. The synchrotron radiation is collimated by means of a rigid cylindrical glass capillary of 110 mm length, 5 mm outer and 30 μm or 10 μm inner diameter. The beam is pointed at the wafer sample and the emitted radiation of X-rays is detected by an energy dispersive spectrometer. Line scans are recorded step by step over the implantation areas and across their borders. The sharpness of the borders is characterized at a lateral resolution of 13 μm and the edge lengths ranging from 0.6 to 8 mm are determined with an accuracy better than ± 20 μm. The signal intensity and implantation dose of cobalt ranging from 1 × 10¹⁵ to 1 × 10¹⁷ ions cm⁻² show a linear relationship as is to be expected for the micrometre thin implanted layers.     

Application of Autoradiography to the Investigation of New Doping Techniques of Semiconductor Materials

The development of technology of new semiconductor devices requires fundamental studies of a number of phenomena taking place in semiconductors during the doping process or accompanying the doping process.

These studies are concerned with the following problems:

1. Diffusion of gold in silicon and the effect of diffusion layers (particularly phosphorus layers) and epitaxial silicon layers on the distribution of gold in thin silicon plates.

2. Distribution of admixtures in silicon introduced with the aid of the ion implantation technique. Our studies concerned with the second of the above mentioned problems comprised an autoradiographic examination of the homogeneity of the beam of phosphorus ions implanted in silicon, and a study of some apparatus factors and of the purity of the basic material on the implantation.     

Reflection of keV heavy-ion beams from solid targets. Dependence on energy and angle of incidence

Recent experimental and theoretical studies of the reflection of keV heavy-ion beams have been extended to higher energies and to non-perpendicular incidence. The reflection coefficient for Na⁺ and K⁺ ions backscattered from polycrystalline gold and silver targets has been obtained for perpendicular incidence at energies of 100–500 keV. The dependence on angle of incidence has been investigated at 30 keV for the same combinations of targets and projectiles. Effects of electronic stopping have been included in the theoretical calculations. Good agreement between the experimental results and the theoretical calculations is found.     

A model of melting of rare gases within bubbles of crystalline metal matrix

Abstract

On the basis of experimental results obtained in the present and some other works a model of melting of rare gas solids within bubbles formed in a crystalline metal matrix as a result of ion implantation is proposed. Rare gas solid is supposed to melt on heating at the expense of the bubble volume expansion by emission of a dislocation loop. On this basis the melting temperature can be estimated as one which is enough to provide for a pressure inside a bubble sufficient for the initiation of the dislocation loop punching. Values of melting temperatures obtained in this way are in good agreement with available experimental data.