Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Large-scale preparation of thin strain-relaxed SiGe is achieved by combining ion implantation and ultrahigh vacuum chemical vapor deposition. The resulting materials were analyzed by double crystal X-ray diffraction, micro-Raman spectroscopy, and tapping mode atomic force microscope. Results revealed that 100-nm-thick Si_0.7Ge_0.3 layers with the diameter of 125 mm and full strain relaxation are successfully prepared by pre-modifying the Si substrates using 50 keV Ar⁺ ions. The strain relaxation is also disclosed to change with both ion species and energy. However, post-modification of SiGe by ion implantation will cause serious damage to the crystal structures, and result in the formation of poly-crystal SiGe.     

Matrix-Untersuchungen zu monomerem Kupfer(I)-chlorid und seinen Komplexen mit N2 und PN IR-spektroskopische Nachweise und ab-initio Rechnungen

Matrix-Investigations on Monomeric Copper(I) Chloride and its Complexes with N₂ and PN Ligands. IR Spectroscopic Results and ab-initio Calculation In solid argon the reaction of monomeric CuCl with N₂ yields ClCuN₂. On the basis of two absorptions in the ir-spectrum and their corresponding isotopic shifts (_14/15N) and with the help of a normal coordinate analysis, linearity of the molecule has been deduced. These results are confirmed by large scale ab-initio Calculations (CPF, MP2). Reaction of monomeric CuCl with molecular PN under matrix condition is shown to give rise to new absorptions in the IR spectrum which arev assigned to a linear molecule ClCuNP.     

Vapour-liquid coexisting curves and hysteresis of simple adsorbate in complex porous systems

A unified approach for simulation of the vapour-liquid coexisting curves on phase diagrams and hysteresis phenomena for simple adsorbates in various type porous adsorbents was developed on the basis of the lattice-gas model. The ideas of this model in complex porous systems were used twice: for a construction of the over-molecular structure for high-dispersed bodies and for a description of the molecular distribution within the complex porous space. The supramolecular structure of these systems is modelled by sections with a simple regular geometry (slit-like, cylindrical and spherical) with additional inclusion of junctions between different pore sections. At the description of the adsorbate distribution, the lateral interactions between the fluidic molecules were included through the quasi-chemical approximation (QCA) that takes into account direct pair correlations between interacting molecules. The knowledge of phase diagrams allows improving a description of the adsorption hysteresis phenomena. The lattice-gas model enables explaining the experimental data for MCM-41 like sample in which the hysteresis is absent, when the pore size is narrowed more than ∼4 nm.     

Adsorption of cyclic hydrocarbons on Pt and the interaction of the adsorbed species with hydrogen

The adsorption of six-membered hydrocarbon cycles and cyclopentane and the interaction of hydrogen with the adsorbed layer on polycrystalline Pt-foil have been studied. The work function change (Δφ) was followed by a Kelvin probe and the C/Pt peak ratio was determined by Auger electron spectroscopy. Combining these two techniques made it possible to distinguish between chemisorption via σ-bonds and π-complex formation. Benzene and toluene adsorbed first as π-complex while cyclohexane showed initially a partial aromatization and a π-complex-like bonding to the surface. Excess hydrocarbon or addition of hydrogen transformed the π-complex into σ-bonded species. Cyclopentane adsorbed via σ-bonds and showed no significant hydrogen effect.     

Estimates for the Rapid Decay of Concentration Functions of n-Fold Convolutions

We estimate the concentration functions of <i>ni>-fold convolutions of one-dimensional probability measures. The Kolmogorov–Rogozin inequality implies that for nondegenerate distributions these functions decrease at least as <i>Oi>(<i>ni> ^–1/2). On the other hand, Esseen⁽³⁾ has shown that this rate is <i>oi>(<i>ni> ^–1/2) iff the distribution has an infinite second moment. This statement was sharpened by Morozova.⁽⁹⁾ Theorem 1 of this paper provides an improvement of Morozova's result. Moreover, we present more general estimates which imply the rates <i>oi>(<i>ni> ^–1/2).     

Preparation of (CdO)1−x(PbO)x and (CdS)1−x(PbS)x thin films by spray pyrolysis technique and their characterization

Mixed thin films of (CdO)_1&minus;x(PbO)_x and (CdS)_1&minus;x(PbS)_x (x=0.25) were prepared on glass substrates by spray pyrolysis technique for various substrate temperatures 300, 320 and 340 °C. Structural and optical properties were studied. XRD studies reveal the formation of mixed films. The substrate temperature of 340 °C seems to be critical for the formation of CdO-PbO mixed films. It is observed that (CdS)_1&minus;x(PbS)_x mixed films were formed at all the three substrate temperatures. The direct band gap value of (CdO)_1&minus;x(PbO)_x and (CdS)_1&minus;x(PbS)_x mixed films is about 2.6 and 2.37 eV, respectively.     

Atomically precise self-assembly of one-dimensional structures on silicon

This work has three main themes: (1) fabricate atomically precise nanostructures at surfaces, particularly nanowires consisting of atom chains; (2) explore the behavior of one-dimensional electrons in atomic chains; (3) find the fundamental limits of data storage using an atomic scale memory. Semiconductor surfaces lend themselves towards self-assembly, because the broken covalent bonds create elaborate reconstruction patterns to minimize the surface energy. An example is the large 7 &times; 7 unit cell on Si(1 1 1), which can be used as building block. On semiconductors, the surface electrons completely de-couple from the substrate, as long as their energy lies in the band gap. Angle-resolved photoemission reveals surprising features, such as a fractional band filling and a spin-splitting at a non-magnetic surface. An interesting by-product is a memory structure with self-assembled tracks that are five atom rows wide and store a bit by the presence or absence of a single silicon atom. This toy memory is used to test the fundamental limits of data storage and to see how storage on silicon compares to storage in DNA.     

Anomalies of attenuation and phase velocity of surface acoustic waves in YBa2Cu3O7‒δ thin films in the vicinity of Tc

We present measurements of the attenuation and phase velocity of surface acoustic waves in thin YBa₂Cu₃O films as a function of temperature, in magnetic fields up to 3.6 T applied parallel to the c-axis of the films. We have observed anomalies in both, the attenuation and the phase velocity in the vicinity of the superconducting critical temperature which do not depend on the magnetic field. Possible origins of these anomalies, observed, to our knowledge, for the first time in YBa₂Cu₃O thin films, are discussed and compared to bulk acoustic wave experiments. We present a kind of feedback technique for surface acoustic waves which improves the sensitivity of this type of measurement. The actual sensitivity limits are mentioned. Received: 7 August 1997 / Revised: 7 November 1997 / Accepted: 17 November 1997     

High Curie temperature in B-site ordered Sr2CrWO6 epitaxial thin films

Epitaxial and c-axis oriented double perovskite Sr₂CrWO₆ thin films were prepared on SrTiO₃ (100) and LaAlO₃ (100) substrates by pulsed-laser deposition. Structural, magnetic and transport properties were found to be sensitive to the gas conditions employed during the deposition. A small amount of oxygen along with Ar during the deposition was found to be essential for B-site ordering; such films displayed lattice parameters close to the bulk value and display ferromagnetic metallic behavior. The Curie temperature observed above 500 K in these films is higher than bulk Sr₂CrWO₆ samples. Films grown without oxygen were observed to have long c-parameter and no B-site ordering; they were non-magnetic and semiconducting.     

Quantitative analysis of multi-element oxide thin films by angle-resolved XPS: Application to ultra-thin oxide films on MgAl substrates

An original procedure has been developed for the quantitative analysis and microstructural interpretation of angle-resolved X-ray photoelectron spectra (AR-XPS) of very thin (<6 nm), multi-element oxide films as grown on metallic binary alloy substrates by, e.g., thermal or plasma oxidation. To this end, first an approach has been given to retrieve the different metallic, oxidic and oxygen primary zero-loss (PZL) intensities from the measured AR-XPS spectra of the bare and oxidized alloy. The principal equations for the determination of the oxide-film thickness, composition and constitution from the resolved PZL intensities have been presented. On this basis, various corresponding calculation routes have been distinguished. The procedure has been applied to the case of very thin (<6 nm), mixed (Mg, Al)-oxide films on bare Mg-based MgAl substrates as grown by dry, thermal oxidation at room temperature. The results obtained on the thickness, composition, defect structure and constitution of the oxide-film have been discussed as function of the bulk Al alloying content and the applied partial pressure of oxygen.