Comparison of two filament lamps by difference hologram interferometry

Total bulb fill pressure and density changes inside incandescent lamps can be studied by holographic interferometry. The main drawback stems from the fact that such techniques only provide information concerning the integral refractive index changes in response to a given electrical load. Difference hologram interferometry results in a direct comparison of any one of the large volume production lamps with a master lamp. A short discussion of the technique is presented and its experimental application is described where the difference interferogram is evaluated automatically.     

Synthesis, characterization, growth mechanism, photoluminescence and field emission properties of novel dandelion-like gallium nitride

Dandelion-like gallium nitride (GaN) microstructures were successfully synthesized via Ni catalyst assisted chemical vapor deposition method at 1200 °C under NH₃ atmosphere by pre-treating precursors with aqueous ammonia. The as-synthesized product was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). X-ray diffraction analysis revealed that as-synthesized dandelion-like GaN was pure and has hexagonal wurtzite structure. SEM results showed that the size of the dandelion-like GaN structure was in the range of 30-60 μm. Dandelion-like GaN microstructures exhibited reasonable field emission properties with the turn-on field of 9.65 V μm⁻¹ (0.01 mA cm⁻²) and threshold field of 11.35 V μm⁻¹ (1 mA cm⁻²) which is sufficient for applications of electron emission devices, field emission displays and vacuum micro electronic devices. Optical properties were studied at room temperature by using fluorescence spectrophotometer. Photoluminescence (PL) measurements of dandelion-like GaN showed a strong near-band-edge emission at 370.2 nm (3.35 eV) with blue band emission at 450.4 nm (2.75 eV) and 465.2 nm (2.66 eV) but with out yellow band emission. The room-temperature photoluminescence properties showed that it has also potential application in light-emitting devices. The tentative growth mechanism for the growth of dandelion-like GaN was also described.     

Ce~(3+)注入掺杂金刚石薄膜蓝区电致发光研究

采用微波等离子体化学气相沉积设备在高掺杂硅衬底上沉积了一层金刚石薄膜,然后采用离子注入法在金刚石薄膜中注入不同剂量的Ce3+,从而制备出了Ce3+掺杂的金刚石薄膜.研究了其电致发光特性,得到了发光主峰位于蓝区(476 nm和435 nm处)的光发射.实验中发现随着Ce3+注入剂量的增加,电致发光强度也随之增加.     

Velocity of current filament at the high gain mode of GaAs power photoconductive switches

Many of the characteristics, especially transient turn-on, of high gain mode photoconductive semiconductor switches can be explained by a model similar to a gas streamer model in this paper. Based on the gas discharge theory and photoactivated charge domain model, the mechanism of current filament at the high gain mode of GaAs photoconductive semiconductor switches (PCSSs) was discussed. It is pointed out that both the carrier density and the regional electric field satisfy two critical conditions for the formation and development of streamers. Experimental phenomena indicate that the turn-on time is considerably shorter than the time required for the transit of carriers crossing the electrode gap of the device at saturation transfer velocity. Moreover, the transient turn-on characteristic was analyzed and the ultra-fast velocity of current filament was calculated. The calculated results are in agreement with the experimental results.     

CVD TiC/alumina multilayer coatings grown on sapphire single crystals

Multilayers of TiC/α-Al₂O₃ consisting of three (1 μm thick) alumina layers separated by thin (∼10 nm) oxidized TiC layers have been deposited onto c-, a- and r-surfaces of single crystals of α-Al₂O₃ by chemical vapour deposition (CVD). The aim of this paper is to describe and compare the detailed microstructure of the different multilayer coatings by using transmission electron microscopy (TEM).The general microstructure of the alumina layers is very different when deposited onto different surfaces of α-Al₂O₃ single crystal substrates. On the c- and a-surfaces the alumina layers grow evenly resulting in growth of single crystal layers of TiC and alumina throughout the coating. However, when deposited on the r-surface the alumina layers generally grow unevenly. No pores are observed within the alumina layers, while a small number of pores are found at the interfaces below the TiC layers. The TiC and alumina layers grow epitaxially on the c- and a-surface substrates. On the r-surface, epitaxy is present only at some rare locations. The TiC layers were oxidized in situ for 2 min in CO₂/H₂ prior to the alumina layer deposition. For all three samples chemical analyses show that the whole TiC layer is oxidized. On the c- and a-surfaces the TiC layer was oxidized to an fcc TiCO phase. On the r-surface the oxidation stage resulted in a transformation of the initially deposited fcc TiC to a monoclinic TiCO phase, which appears to be a modified TiO structure with a high carbon content.     

高功率太赫兹脉冲半导体探测器的分析与设计

设计了一种基于半导体热电子效应的0.14 THz高功率脉冲探测器.首先根据探测器的结构特点,分析了探测器的工作原理,并推导了探测器的相对灵敏度表达式.接着采用三维电磁场时域有限差分法,模拟计算了探测器的电压驻波比和线性区的相对灵敏度.在优化的结构参数下,探测器在0.14 THz波段的电压驻波比不大于1.3,相对灵敏度约为0.6 kW^-1,且在0.13—0.16 THz频带内波动不超过10%.然后讨论了焦耳热效应对探测器的影响,考察了太赫兹脉冲宽度与输出电压变化率的关系.最后对探测器的 关键词： 高功率太赫兹脉冲 探测器 热电子 灵敏度     

碰撞效应对超强激光与高密度碳薄膜靶相互作用中快电子输运的影响

 在激光驱动粒子加速和快点火背景下,用带碰撞模块的1维粒子模拟程序,研究了高功率亚ps激光与高密度（近固体密度）碳薄膜靶相互作用中的碰撞效应。研究表明,通过和无碰撞粒子模拟结果的比对,在早期瞬态时段,碰撞效应通过慢化提供电阻加热的回流对快电子产生和输运起重要作用。定性上,碰撞效应还减少快电子的产额和最大能,抑制能量输运。然而,在加热后期当往返运动成为主要输运机制时,有碰撞和无碰撞两种情况的差别减小。     

Homoepitaxial growth and photoluminescence of self‐assembled In‐doped ZnS nanowire bundles

Self‐assembled In (Indium)‐doped ZnS nanowire bundles were synthesized via a thermal evaporation method without using any template. Vapor ‐ solid homoepitaxial growth was found to be the key reason for the formation of close‐packed nanowire bundles grown on the surface of microscale sphere‐shaped ZnS crystal. X‐ray diffraction (XRD), selected area electron diffraction (SAED), and transmission electron microscopy (TEM) analysis demonstrate that the In‐doped ZnS nanowires have the cubic structure, and there are numerous stacking faults along the <111> direction. Photoluminescence (PL) spectrum shows that the spectrum mainly includes two parts: a weak violet emission band centering at about 380 nm and a strong green emission band centering at about 510 nm. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

直立Zn_2GeO_4/ZnO纳米棒阵列的制备及其发光性质研究

利用化学气相沉积法(CVD)在表面溅射Au和沉积ZnO籽晶的硅衬底上分别生长高度有序、垂直密布的直立Zn2GeO4/ZnO纳米棒阵列,利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和光致发光(PL)谱测试手段对所制备样品进行表征和发光特性的研究。所制备的Zn2GeO4/ZnO纳米棒的直径为350~400 nm,高度为10~11μm;室温PL谱观察到3个来源于Zn2GeO4的典型发光峰。最后,对CVD法制备的Zn2GeO4/ZnO纳米棒生长机理进行了分析。该种直立性良好的一维纳米棒材料可以广泛地应用到纳米光电子器件中。     

Numerical analyses of deflagration initiation by a hot jet

Numerical simulations of axisymmetric reactive jets with one-step Arrhenius kinetics are used to investigate the problem of deflagration initiation in a premixed fuel–air mixture by the sudden discharge of a hot jet of its adiabatic reaction products. For the moderately large values of the jet Reynolds number considered in the computations, chemical reaction is seen to occur initially in the thin mixing layer that separates the hot products from the cold reactants. This mixing layer is wrapped around by the starting vortex, thereby enhancing mixing at the jet head, which is followed by an annular mixing layer that trails behind, connecting the leading vortex with the orifice rim. A successful deflagration is seen to develop for values of the orifice radius larger than a critical value a _c in the order of the flame thickness of the planar deflagration δ_L. Introduction of appropriate scales provides the dimensionless formulation of the problem, with flame initiation characterised in terms of a critical Damköhler number Δ_c=(a _c/δ_L)², whose parametric dependence is investigated. The numerical computations reveal that, while the jet Reynolds number exerts a limited influence on the criticality conditions, the effect of the reactant diffusivity on ignition is much more pronounced, with the value of Δ_c increasing significantly with increasing Lewis numbers . The reactant diffusivity affects also the way ignition takes place, so that for reactants with the flame develops as a result of ignition in the annular mixing layer surrounding the developing jet stem, whereas for highly diffusive reactants with Lewis numbers sufficiently smaller than unity combustion is initiated in the mixed core formed around the starting vortex. The analysis provides increased understanding of deflagration initiation processes, including the effects of differential diffusion, and points to the need for further investigations incorporating detailed chemistry models for specific fuel–air mixtures.