High-Pressure Synthesis and Crystal Structure of B2S3

Two new high-pressure phases of binary boron-sulfur compounds, B₂S₃-II and B₂S₃-III, were synthesized at 3-6.2 GPa. A single crystal of B₂S₃-III was grown and the structure was determined (tetragonal, space group I4₁/a, a=16.086(2) Å, c=30.488(4) Å; V=7888(1) ų, Z=100, R=3.0% and R_w=2.8% for 3047 observed data [I>3.00σ(I)]. The structure of B₂S₃-III consists of two kinds of macrotetrahedra built up from 20 and 34 BS₄-tetrahedra. These macrotetrahedra connect each other to form an interpenetrating zincblende-type structure by sharing BS₄-tetrahedra at the corners of those. B₂S₃-III is anticipated having a rather disordered structure. From the UV-Vis diffuse reflectance spectrum, the optical band gap of B₂S₃-III was estimated to be 3.7 eV.     

Boron chelate complexes with 4-[N-(R-pyrid-2-yl)carbamoyl]-3-amino-2-cyanobuten-2-ic acid esters (codimers of N-(R-pyrid-2-yl)amides and the ethyl ester of cyanoacetic acid)

Mono- and binuclear boron chelates have been synthesized by the action of butylthiodibutylborane on the ethyl esters of 4-[N-(R-pyrid-2-yl)carbamoyl]-3-amino-2-cyanobuten-2-ic acids (codimers of N-(R-pyrid-2-yl) amides and the ethyl ester of cyanoacetic acid). Complexes of this type can exist in solution in the form of two tautomers: acetamide acid derivatives or the corresponding ketene N,O-acetals.N. D. Zelinski Institute of Organic Chemistry, Russian Academy of Sciences, 117913 Moscow. Translated from Izvestiya Akademii Nauk, Seriya Khimicheskaya, No. 9, pp. 2162–2170, September, 1992.     

Electron microscopic phase analysis of BN-thin films

A series of BN films was deposited by means of r.f. magnetron sputtering of a h-BN target onto Si(1OO) surfaces. Hereby, the substrate bias voltage was varied. Special interest is focussed to the influence of the deposition parameters on the orientation of the growing hexagonal BN film with respect to the substrate. For structural investigation, cross section samples were prepared. In addition to HRTEM and diffraction investigations, especially electron energy loss spectroscopy (EELS) was applied successfully for phase identification. For negative bias voltages of U _B =–300 V and U _B =–350V, we found a phase system consisting of a first-grown 25 nm thick layer of hexagonal structure with the c axis parallel to the substrate surface followed by the cubic phase.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Preparation and lithium doping of gallium oxynitride by ammonia nitridation via a citrate precursor route

Gallium oxynitride, isostructural to hexagonal gallium nitride (h-GaN), was obtained by ammonia nitridation of a precursor prepared from the addition of citric acid to an aqueous solution of gallium nitrate. Gallium oxynitride produced at 750 °C had a small amount of gallium vacancies, and was formulated as (Ga_0.89□_0.11) (N_0.66O_0.34) where the symbol □ stands for gallium vacancy. Both the gallium vacancies and oxygen substituted for nitrogen were randomly distributed within the structure. The amount of vacancies decreased with nitridation temperatures in the range of 750-850 °C. Approximately, 10 at% Li⁺ was doped into the gallium oxynitride, using a similar preparation with the additional presence of lithium nitrate, resulted in the random substitution of Ga³⁺ in an atomic ratio of Li/Ga<1 at 750 °C. Oxygen was codoped with lithium and substituted nitrogen in the wurtzite-type crystal lattice. These substitutions reduced the electrical conductivity in the gallium oxynitride semiconductor. A new oxynitride, Li₂Ga₃NO₄, was also obtained with Li₂CN₂ impurity using similar preparations from a mixture of Li/Ga?1. The crystal structure was isostructural with h-GaN, and was refined as P6₃mc with a=0.31674(1) nm, and c=0.50854(2) nm. The Ga and Li occupancies at the 2b site were refined to be 0.6085 and 0.3915, respectively, assuming that the other 2b site was randomly occupied with 1/5O and 4/5N. When the new compound was washed for over 1 min for the removal of Li₂CN₂ impurities, it was decomposed to a mixture of α-GaOOH and α-LiGaO₂. The as-prepared product with Li/Ga=1 showed the highest intensity in yellow luminescence among the products under excitation at 254 nm.     

Determination of boron in boron-alloyed steels by inductively coupled plasma atomic emission spectrometry

An inductively coupled plasma atomic emission spectrometry (ICP-AES) procedure has been developed and examined for the determination of boron content (0.01 up to about 2% B) in boron-alloyed steels such as POLDI ATA BOR (65% Fe, 19%Cr, 12% Ni, 1.5% Mn, 1% B), POLDI ATA BOR EXTRA (62% Fe, 18% Cr, 13% Ni, 2.5% Mo, 1.5% Mn, 1% B) and POLDI ATA BOR-R (75% Fe, 18% Cr, 3.5% Ti, 1.8% B). The steel sample is dissolved with a mixture of hydrochloric, nitric, sulfuric and phosphoric acids in a quartz vessel. Borides of alloyed metals, especially of iron and chromium, are quantitatively decomposed. The presence of phosphoric acid in a sample solution reduces the volatility of boric acid with water vapour.Presented in part at the 1989 European Winter Conference on Plasma Spectrochemistry, Reutte, Austria     

Prepared Low Stress Cubic Boron Nitride Film by Physical Vapor Deposition

We present low stress cubic boron nitride (cBN) films with a transition layer deposited on the metal alloy substrates by tuned substrate radio-frequency magnetron sputtering. The films were characterized by Fourier transform infrared spectroscopy and transmission electron microscopy (TEM). The IR peak position of cubic boron nitride at 1006.3 cm⁻¹, which is close to the stressless state, indicates that the film has very low internal stress. The TEM image shows that pure CBN phase exists on the surface of the film. Several phases of boron nitride were found at the medium implantation dose. It is believed that the transition from the low ordered phases to cBN phase occurred during implantation.     

Boron implantation in Si: Channeling effects studied by SIMS and simulation

The axial channeling behaviour of boron implants in <100>, <110> and <111> silicon wafers is investigated by SIMS. Large differences of channeling characteristics such as channeled projected range (the projected range of channeled ions or channeling peak) and the fraction of channeled to implanted ions are observed among the three major crystal orientations. Within the critical angle, the channeling behaviour is very sensitive to the incidence beam angle with respect to crystal orientations. SIMS measurements are performed at different positions along several critical directions over a whole wafer. Well channeled profiles with an incidence beam angle to crystal orientations of 0 ° are obtained for each ion implantation energy and orientation. The results are used to test various models of ion implantation by simulation. A 3-parameter model for electronic stopping power of boron in silicon was proposed.     

Properties and Characterization of Modified HZSM—5 Zeolites

Physicochemical and catalytic properties of phosphorus and boron modified HZSM-5 zeolites treated with 100% steam at 673K were investigated.The acidity and distribution of acidic sites were studied by infrared spectroscopy using pyridine as probe molecule and temperature programmed desortion (TPD) of ammonia.The structure of the samples was characterized by XRD,and the textural properties of the catalysts were determined by nitrogen isothermal adsorption-desorption measurements and scanning electron microscopy(SEM).The XRD results show that the modified samples have no novel crystalline phase,indicating a high dispersion of phosphorus and boron species.After treatment,the microporous volume and surface area of the samples markedly decrease,implying the bolockage of the channel.The nitrogen adsorption-desorption measurements suggest that the isothermal type of all samples is a combination of isothermal type Ⅰ and Ⅳ，and all hysteresis loops resemble the H4-type in the IUPAC classification.The total acidity of the modified samples,determined by pyrldine adsorption IR and TPD of ammonia,decreases in contrast to that of the parent HZSM-5.The conversion of n-heptane over P and B steammodified HZSM-5 is higher than that of P and B-modified HZSM-5 zeolites but lower than that of the parent HZSM-5.     

Ni-B和Ni-Ce-B超细非晶态合金的退火晶化及其催化性能

 采用XAFS,XRD和DTA方法研究了Ni－B和Ni－Ce－B超细非晶态合金在退火过程中的结构变化及其结构与催化性能的关系．活性结果表明,在退火温度为623K时,Ni－B和Ni－Ce－B样品的苯加氢催化反应转化率最高,分别为63％和81％,0．3％Ce的掺入提高了Ni－Ce－B的催化活性．DTA结果表明,Ni－B超细非晶态合金在598和653K有两个晶化峰,而Ni－Ce－B样品有548,603,696和801K四个晶化峰．XAFS和XRD结果进一步说明,在573K退火时,Ni－B样品晶化生成晶态Ni3B和纳米晶Ni,此时Ni－Ce－B仅有少量晶态Ni3B生成．在673K退火时,Ni－B样品中的Ni3B开始分解生成晶态Ni,同时纳米晶Ni聚集并形成大颗粒晶态Ni,而Ni－Ce－B样品晶化生成晶态Ni3B和纳米晶Ni．在773K和更高的温度退火处理后,Ni－B样品中Ni的局域环境结构与金属Ni箔基本一致,但Ni－Ce－B样品晶化生成的Ni晶格有较大畸变,同时Ni3B并未分解．说明0．3％的Ce对提高Ni－Ce－B样品的稳定性有显著作用．本文首次报道了Ni－B和Ni－Ce－B超细非晶态合金中苯加氢催化活性中心为纳米晶Ni和类似于金属Ni的Ni－B非晶态合金．     

基于氮化碳复合材料磁性固相萃取结合高效液相色谱法测定尿液中3种羟基多环芳烃

建立了测定尿液中3种羟基多环芳烃的氮化碳复合材料磁性固相萃取结合高效液相色谱-荧光检测法。所构筑的磁性氮化碳材料，经扫描电子显微镜、X射线衍射仪、振动样品磁强计和比表面积分析仪表征后，用于尿液中3种羟基多环芳烃的富集净化。考察了吸附剂用量、吸附时间、洗脱溶液和洗脱体积（单次洗脱体积×洗脱次数）对萃取效率的影响。结合高效液相色谱-荧光分析，在0.25~250 μg/L范围内线性关系良好（相关系数r=0.999），3种羟基多环芳烃的检出限和定量限分别为0.08和0.25 μg/L，回收率为90.1%~102%，日内和日间精密度分别为1.5%~7.7%和2.2%~8.7%。该本方法简单、快速、高效，可用于尿液中羟基多环芳烃的分析。