Chitosan/Ce(IV) redox polymerization‐based amplification for detection of DNA point mutation

Polymerization‐based signal amplification, a technique developed for use in rapid diagnostic tests, hinges on the ability to localize initiators as a function of interfacial binding events. We report here a new DNA detection method in which polymer growth in redox‐polymerization is used as a means to amplify detection signals. The introduction of biotin‐labeled chitosan (biotin‐CS) with highly dense amino groups into the polymerization amplification as macromolecular reducing agent, beneficially simplifies amplification operation, as well as, provides a large amount of initiation points to improve the sensitivity of detection. DNA hybridization, SA and biotin binding reactions led to the attachment of CS on a solid surface where specific DNA sequences were located. With the addition of the mixture containing monomer AM, crosslinker PEGDA and oxidant CAN onto the CS location, the growth of polymer films was triggered to render the corresponding spots readily distinguishable to the naked eye. Direct visualization of 0.21 fmol target DNA molecules of interest was demonstrated. Non‐small cell lung cancer p53 sequence was further selected as a proof‐of‐principle to detect DNA point mutation. The proposed method exhibited an efficient amplification performance for molecule detection, and paved a new way for visual diagnosis of biomolecules. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 1929–1937     

Investigation of molar concentration effect on structural,optical, electrical,and photovoltaic properties of spray‐coated Cu2O thin films

High quality copper oxide thin films were prepared by nebulizer spray pyrolysis technique using different concentrations of copper precursor solution. Concentration‐dependent structural, morphological, optical, and electrical properties of the prepared films are discussed. X‐ray diffraction studies done for the samples confirmed that the deposited films are in Cu₂O phase with polycrystalline cubic structure. Atomic force microscopy analysis revealed that all the films are composed of nano sheet shaped grains covering the substrate surface. Optical studies done on the samples showed band gap values 2.42, 2.31, and 2.02 eV for the solution concentration 0.01, 0.05, and 0.1 M, respectively. Photoluminescence spectral analysis showed the emission band at 620 nm confirming the formation of cuprous oxide. Electrical analysis of the films showed p‐type conductivity with a low resistivity 2.19 × 10² Ω.cm and high carrier concentration 16.76 × 10 ¹⁵ cm⁻³ for the molar concentration 0.1 M. In this work, Cu₂O/ZnO heterojunctions were also prepared, and solar cell properties were studied; they were found to show increased open circuit voltage and short circuit current for higher copper concentration.     

可见近红外光响应直接Z型异质结光催化剂LaNiO3/CdS的产氢性能

通过冷凝-回流方式制备可见近红外光响应直接 Z型 LaNiO₃/CdS纳米杂化物，在对其进行物理化学表征后将其应用于光解水产氢反应。在可见光照射下，LaNiO₃/CdS光催化剂在5 h的H₂产量达到737 μmol，其H₂产量是CdS的4.3倍(172 μmol)。光电化学测试证实，LaNiO₃/CdS之间异质结的构筑能有效地促进光生载流子在界面的迁移、分离，从而促进其光解水产氢效率和稳定性的提高。同时随着近红外光的引入，其产氢活性提高至996 μmol。在上转换荧光测试中，LaNiO₃在808 nm光激发下在406和628 nm显示出发射荧光，这表明其能在近红外光照射下产生光生载流子，从而进一步提高其光解水产氢效率。     

Influence of growth temperature and post-annealing on an n-ZnO/p-GaN heterojunction diode

We report on an n-ZnO/p-GaN heterojunction diode fabricated from zinc oxide (ZnO) films at various growth temperatures (450, 500, 550, and 600 °C) by RF sputtering. The films were subsequently annealed at 700 °C in N₂ ambient. To investigate the influence of the growth temperature of n-ZnO films, the microstructural, optical, and electrical properties were measured using scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), and Hall measurements. The XRD pattern showed the preferred orientation along the c-axis (002) regardless of growth temperature. The PL spectra showed a dominant sharp near-band-edge (NBE) emission. Current–voltage (I–V) curves showed excellent rectification behavior. The turn-on voltage of the diode was observed to be 3.2 V for the films produced at 500 °C. The ideality factor of ZnO film was observed to be 1.37, which showed the best performance of the diode.     

退火温度对TiO2/CdSe纳米片异质结薄膜光电性能的影响

采用水热法在FTO上制备（001）高活性晶面主导的TiO₂纳米片薄膜,利用循环伏安法在TiO₂纳米片薄膜上沉积CdSe颗粒,制备了TiO₂/CdSe纳米片异质结薄膜。分别在150、250、350、450 ℃,氩气保护气氛中对样品进行退火。利用X射线衍射仪（XRD）、场发射扫描电镜（FESEM）、X射线光电子能谱分析仪（XPS）、紫外-可见（UV-Vis）分光光度计以及电化学工作站对不同温度退火后的TiO₂/CdSe纳米片异质结薄膜的微观形貌、晶体结构、光电化学性能进行表征和测试。结果表明：六方相CdSe纳米颗粒均匀包覆在TiO₂纳米片表面,直径30 nm左右;随着退火温度的升高CdSe纳米颗粒长大,形成光滑的CdSe薄膜,且晶化程度提高;TiO₂纳米片表面的Se元素与Cd元素发生氧化;TiO₂/CdSe纳米片异质结薄膜对可见光的吸收光谱发生红移,禁带宽度逐渐减小。光电化学性能测试表明随着退火温度的升高,TiO₂/CdSe纳米片异质结薄膜的光电流密度显著提高,开路电压减小,但由于SeO2和CdO的出现,导致填充因子减小,影响光电转换效率的提高。在本实验条件下,TiO₂/CdSe纳米片异质结薄膜的最佳退火温度为150 ℃,填充因子为0.77,光电转换效率达到3.12%。     

Bi2Fe4O9/g-C3N4/UiO-66三元复合材料的协同光催化作用

通过水热法合成具有协同机制的三元复合材料Bi₂Fe₄O₉/g-C₃N₄/UiO-66,研究表明三元复合光催化剂的催化活性要高于二元材料和纯材料。这主要是由于Bi₂Fe₄O₉更易于和g-C₃N₄结合形成稳定的Z-scheme异质结结构,使三元复合材料增强了可见光响应能力,提高了电子-空穴分离能力,增强了空穴和电子的氧化还原能力。     

The band alignment at CdS/Cu2ZnSnSe4 heterojunction interface

Band alignment at CdS/Cu₂ZnSnSe₄ heterojunction interface is studied by X‐ray photoemission spectroscopy. The Cu₂ZnSnSe₄ thin films are prepared by selenization of electrodeposited Cu‐Zn‐Sn precursors. CdS overlayers with different thickness are sequentially grown on the Cu₂ZnSnSe₄ substrate by pulsed laser deposition process. Photoemission spectra are obtained before and after each growth to study the conduction and valence band offsets at the heterojunction interface. The determined conduction band offset of 0.34 eV indicates a spike‐like ‘type I’ band alignment at CdS/Cu₂ZnSnSe₄ interface. The spike will avoid interface recombination, and it is low enough that electron could transfer from the Cu₂ZnSnSe₄ layer to the buffer layer which is suitable for solar cell's fabrication. Copyright © 2012 John Wiley & Sons, Ltd.     

Solution-processed bilayer photovoltaic devices with nematic liquid crystals

The cross-linking of polymerisable liquid crystalline semiconductors is a promising approach to solution-processable, multilayer, organic photovoltaics. Here we demonstrate an organic bilayer photovoltaic with an insoluble electron-donating layer formed by cross-linking a nematic reactive mesogen. We investigate a range of perylene diimide (PDI) materials, some of which are liquid crystalline, as the overlying electron acceptor layer. We find that carrier mobility of the acceptor materials is enhanced by liquid crystallinity and that mobility limits the performance of photovoltaic devices.     

卤氧化铋复合物光催化剂

利用半导体光催化降解有机污染物与分解水制氢对于解决能源短缺与环境污染这一世界性难题具有重要意义,引起了人们的重视.传统的光催化剂TiO2存在可见光利用率低与光生载流子的复合率高等问题[1-3],因此寻找新型高效光催化剂的工作迫     

基于磷光材料的低给体比例有机太阳能电池

本文以低比例的磷光材料作为给体,制备了基于MoOx/C60:x%Ir(ppy)3的有机太阳能电池(OPV)器件.其中,C60为高比例的受体材料,金属配合物Ir(ppy)3为低比例的给体材料,MoOx为阳极缓冲层.通过一系列不同Ir(ppy)3比例的OPV器件对比研究,得出了最优器件结构.研究发现,当Ir(ppy)3比例足够小时,器件表现为肖特基势垒,开路电压(VOC)较大,短路电流(JSC)较小;随着Ir(ppy)3比例的增加,VOC逐渐减少,而JSC逐渐增大;当进一步增加Ir(ppy)3比例时,VOC趋于稳定,JSC开始减小.结果显示,5%Ir(ppy)3比例的器件性能最佳,效率达1.7%.为了使器件效率得到进一步提升,本研究组采用吸收光谱范围比C60更宽的C70作为受体材料,使光电转换效率进一步提升至3.0%.