Cu-MgF2复合纳米金属陶瓷薄膜的电导特性研究

用射频磁控共溅射法制备了Cu体积分数分别为 10 % ,15 % ,2 0 %和 3 0 %的Cu MgF2 复合金属陶瓷薄膜 .用x射线衍射、x射线光电子能谱和变温四引线技术对薄膜的微结构、组分及电导特性进行了测试分析 .微结构分析表明 :制备的Cu MgF2 复合薄膜由fcc Cu晶态纳米微粒镶嵌于主要为非晶态的MgF2 陶瓷基体中构成 ,Cu晶粒的平均晶粒尺寸随组分增加从 11 9nm增至 17 8nm .5 0— 3 0 0K温度范围内的电导测试结果表明 :当Cu体积分数qM 由 15 %增加到 2 0 %时 ,Cu MgF2 复合薄膜的电阻减小了 8个量级 ,得出制备的复合薄膜渗透阈qCM 应处于 15 %和 2 0 %之间 .qM 在 10 %和 15 %之间的薄膜呈介质导电状态 ,而在 2 0 %和 3 0 %之间的薄膜则呈金属导电状态 .从理论上讨论了复合薄膜中杂质电导和本征电导的激活能及其对电导的贡献 ,并讨论了Cu MgF2 复合纳米金属陶瓷薄膜的渗透阈 ,得到了和实验一致的结果     

超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯复合材料的输运性质

采用热压法获得了具有不同混合比例的超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯导电复合材料,并利用x射线衍射、扫描电子显微镜和标准四引线方法对复合材料的结构和低温电输运性质进行测量.实验结果显示,超导氧化物La1.85Sr0.15CuO4颗粒随机分布在聚合物本体中,相互间没有连接构成网络结构.在正常态下,复合材料的电阻-温度变化曲线给出类半导体行为.但对应于超导氧化物La1.85Sr0.15CuO4的超导转变温度Tc处,复合材料的电阻-温度变化曲线出现了极小值.室温下电阻率ρ随外加电场强度E的变化曲线测量结果表明,ρ-E曲线为一线形关系,随着电场强度E增加,电阻率ρ下降.文中对可能存在的导电机制进行分析,结果表明隧道贯穿模型可以很好地解释复合材料的导电机制.另外,外加电场强度E对复合材料的电输运特性有明显的影响.     

Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(0 0 1) substrates

We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In_0.10Ga_0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L_||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle.     

Computational Electrochemistry: A Model to Studying Ohmic Distortion of Voltammetry in Multiple Working Electrode,Microfluidic Devices,an Adaptive FEM Approach

Characteristics of mass transport and potential distribution applicable to microfluidic electrochemical flow cell devices has been modelled using the finite element method. A flexible, automatic grid generation algorithm has been combined with an a‐posteriori error indication technique presented by Nann and Heinze to allow irregular cell geometries to be modelled. The code has been applied to the problem of steady state generator – detector linear sweep voltammetry in a channel flow cell showing the effects of IR drop on the voltammetric response of each electrode.     

Experimental analysis of current and deformation of ion-exchange polymer metal composite actuators

In this paper we describe the experimental analysis of a novel ion-exchange polymer metal composite (IPMC) actuator under large external voltage. The experimental analysis is supplemented with a coupled thermodynamic model, which includes mass transport across the thickness of the polymer actuator, chemical reactions at boundaries, and deformation as a function of the solvent (water) distribution. In this paper, the case of large electrode potentials (over 1.2 V) has been analyzed experimentally and theoretically. At these voltage levels, electrochemical reactions take place at both electrodes. These are used in the framework of overpotential theory to develop boundary conditions for the water transport in the bulk of polymer. The model is then simplified to a three-component system comprised of a fixed negatively charged polymeric matrix, protons, and free water molecules within the polymer matrix. Among these species, water molecules are considered to be the dominant species responsible for the deformation of the IPMC actuators. Experiments conducted at different initial water contents are described and discussed in the context of the proposed deformation mechanism. Comparison of numerical simulations with experimental data shows good agreement.     

一般非均匀凸介质迁移算子本征值的分布

本文讨论一般非均匀凸介质所确定的迁移算子的本征值的分布问题，利用Ｈｉｌｂｅｒｔ空间的Ｈ算子理论，完整地解决了一般非均匀凸介质中迁移算子本征值的分布问题，若｛λｎ｝ｎ＝１＾∞是迁移算子本征值的一种计数，我们证明了Σ↓ｎ＝１↑∞ｅ＾６Ｒｅλｎτ〈＋∞，其中τ是粒子的最大逃逸时间，并对本征值的发散程度以及本征值的个数函数作了相应的讨论。     

Study on a Cross Diffusion Parabolic System

This paper considers a kind of strongly coupled cross diffusion parabolic system,which can be usedas the multi-dimensional Lyumkis energy transport model in semiconductor science.The global existence andlarge time behavior are obtained for smooth solution to the initial boundary value problem.When the initialdata are a small perturbation of an isothermal stationary solution,the smooth solution of the problem under theinsulating boundary condition,converges to that stationary solution exponentially fast as time goes to infinity.     

MEASUREMENTS OF Fe AND Cu K-Shell IONIZATION CROSS SECTIONS BY SLOW ELECTRON IMPACT

ＭＥＡＳＵＲＥＭＥＮＴＳＯＦＦｅＡＮＤＣｕＫ－ＳｈｅｌＩＯＮＩＺＡＴＩＯＮＣＲＯＳＳＳＥＣＴＩＯＮＳＢＹＳＬＯＷＥＬＥＣＴＲＯＮＩＭＰＡＣＴＬｉＴａｉｈｕａＡｎＺｈｕＬｕｏＺｈｅｎｇｍｉｎｇＣｅｎｔｅｒｆｏｒＲａｄｉａｔｉｏｎＰｈｙｓｉｃｓ，Ｉｎｓ...     

三级近似束流光学计算程序

为了精确计算束流在离子光学系统中的传输,用Visual FORTRAN 6.5语言编写了一个计算程序,长约13000行. 此程序可以计算由三圆筒单透镜、三膜片单透镜、双元筒透镜、均匀场静电加速管、磁四极透镜、六极磁铁、静电四极透镜、偏转磁铁、螺线管透镜、ExB~正交电磁场分析器、静电偏转器、漂浮管、QWR(Quarter Wave Resonators)和SLR(Split Loop Resonators)射频加速元件等元件任意组成的离子光学系统. 粒子轨迹的计算可精确到三级近似. 粒子的分布类型也可以有多种选择. 程序具有最优化计算功能,即可以自动调整元件的参数,以实现所需要的光学条件. 各元件之后的横向和纵向相图以及系统的束流包络线以图形方式显示在屏幕上.