C波段平面异向介质设计及其后向波特性验证

提出了一种工作在C波段的新型平面结构异向介质，它除了带宽宽和损耗小外，还具有体积小、结构简单的优点，而且能够实现工作频段的平移，频率平移范围为4—20 GHz.基于电磁波由自由空间入射半无限大异向介质平板的传输和反射数据，计算出了电波在其中传播时的相速随频率的变化曲线，结果表明所讨论的异向介质确实在预想的频段上表现出后向波特性；同时利用相位观察法进一步验证了上述的后向波特性，从而肯定了异向介质的存在. 关键词： 异向介质 宽频带 小单元 后向波特性     

一个二阶方程的振动性质及其应用

本文研究了一个二阶微分方程的解及其振动性质,利用它获得了一般二阶自共轭方程的振动性判别准则,特别对其中一类二阶微分方程的振动性给出了定量的判别方法.推广了E.Hille的工作,使E.Hille的研究结论成为本文结果的极特殊的情形,同时对一类具有“积分小”系数或可化为具有“积分小”系数的二阶微分方程的振动性与非振动性给出了简便、精确的判别方法.     

Synthesis and Properties of a Heteronuclear Ag（Ⅰ）/Ni（Ⅱ） Complex

Introduction Itiswell knownthatcyanogroupsincyanometa latessuchas[Ag(CN)2]-unitscanbeusedasbridg ingligandsandapolymericstructurecanbeformed throughsilver silver(argentophilic)interactions.This propertyhasbeenexploredintheconstructionofmany oligomericandp…     

Identity of defect causing nonideality in nearly ideal Au/n-Si Schottky barriers

We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface.     

溶胶-凝胶VO2薄膜转换特性研究

利用溶胶凝胶法在SiO2Si衬底上沉积高取向的V2O5薄膜,在压强低于2Pa,温度高于400℃的条件下,对V2O5薄膜进行真空烘烤,获得了电阻率变化3个数量级以上、弛豫宽度为62℃的VO2多晶薄膜.以X射线衍射(XRD)、扫描电子显微镜(SEM)图和电阻率转换特性等实验结果为依据,详细分析了溶胶凝胶薄膜在真空烘烤时从V2O5向VO2的转化,它经历了从VnO2n+1(n=2,3,4,6)到VO2的过程.实验证明,根据选择合适的成膜热处理条件和真空烘烤条件是实现溶胶凝胶V2O5结构向VO2结构成功转换的关键 关键词： 溶胶-凝胶法 氧化钒薄膜 VO2膜转换特性     

The strong Lefschetz property of the coinvariant ring of the Coxeter group of type H4

We prove that the coinvariant ring of the irreducible Coxeter group of type H₄ has the strong Lefschetz property.     

荧光波长对共焦显微镜成像特性的影响

导出了共焦显微镜中不同荧光波长情况下的荧光功率传输函数、三维脉冲响应函数（3D－PSF）和三维光学传递函数（3D－OTF）。结果表明，不同的荧光波长对共焦显微镜的空间截止频率、分辨率、光学传递函数存在明显的影响。当激发波长与荧光波长的比值下降到一定程度时，可以看到明显的失锥现象。     

Parabolic Harnack inequality for divergence form second order differential operators

Old and recent results concerning Harnack inequalities for divergence form operators are reviewed. In particular, the characterization of the parabolic Harnack principle by simple geometric properties -Poincaré inequality and doubling property- is discussed at length. It is shown that these two properties suffice to apply Moser's iterative technique.     

Electrical conductance of solutions of lithium nitrate in 1,3-diaminopropane

Electrical conductances and densities of the LiNO₃-1,3-diaminopropane system have been measured as a function of composition and temperature. The results suggest that the solvent molecules may act as bridges between Li⁺ ions at higher concentration of LiNO₃.     

H-空间与拟向量变分不等式

本在Hausdorff locally convex H-空间上建立了一个新的不动点定理；利用局部交性质，在Hausdorff locally convex H-空间上建立了相应的拟向量变分不等式．