Effect of H impurity on misfit dislocation in Ni-based single-crystal superalloy： molecular dynamic simulations

The effect of H impurity on the misfit dislocation in Ni-based single-crystal superalloy is investigated using the molecular dynamic simulation.It includes the site preferences of H impurity in single crystals Ni and Ni 3 Al,the interaction between H impurity and the misfit dislocation and the effect of H impurity on the moving misfit dislocation.The calculated energies and simulation results show that the misfit dislocation attracts H impurity which is located at the γ/γˊinterface and Ni₃ Al and H impurity on the glide plane can obstruct the glide of misfit dislocation,which is beneficial to improving the mechanical properties of Ni based superalloys.     

Computer simulation of some dynamical properties of the Lorentz gas

We carried out molecular dynamics simulations of a Lorentz gas, consisting of a lone hydrogen molecule moving in a sea of stationary argon atoms. A Lennard-Jones form was assumed for the H₂-Ar potential. The calculations were performed at a reduced temperatureK ^* =kT/_{H 2–Ar} = 4.64 and at reduced densities ^*= _{Ar Ar} ³ in the range 0.074–0.414. The placement of Ar atoms was assumed to be random rather than dictated by equilibrium considerations. We followed the trajectories of many H₂ molecules, each of which is assigned in turn a velocity given by the Maxwell-Boltzmann distribution at the temperature of the simulation. Solving the equations of motion classically, we obtained the translational part of the incoherent dynamic structure factor for the H₂ molecule,S _tr(q, ). This was convoluted with the rotational structure factorS _rot(q, ) calculated assuming unhindered rotation to obtain the total structure factorS(q, ). Our results agree well with experimental data on this function obtained by Egelstaffet al. At the highest density ( ^*=0.414) we studied the dependence ofS(q, ) on system size (number of Ar atoms), number of H₂ molecules for which trajectories are generated, and the length of time over which these trajectories are followed.     

基于异构双核的磁共振接收机的设计

提出了基于异构双核的低场核磁共振（Low-field Nuclear Magnetic Resonance,low-field NMR）接收机的设计,具有ARM（Adanced RISC Machines）和现场可编程门阵列（Field Programmable Gate Array,FPGA）先进的异构双核结构、高速的模数转换器（Analog to Digital Converter,ADC）采集、增益的可控以及可视化显示等特性,提高了整个系统的性能指标.设计中采用Xilinx公司的系统开发工具System Generator来实现内部信号处理功能.实验结果表明,数字接收机具有结构紧凑、可重构性强、采样速率高和成本低等特点,并且增益的可控使接收机获得了较大的动态范围,提高了重建图像的信噪比（Signal-to-Noise Ratio,SNR）.     

继电器动态过程中动态参数的测试方法

本文介绍了一种测试继电器在动态过程中动态参数测试的方法。采用此方法能直接测量和观察继电器动态过程中的线圈电压、电流 ,同时可测出继电器的动作时间 ,还可了解其接点在接触过程是否有振动现象存在。所以 ,此方法是一种多用途的继电器动态参数测量方法     

Stationary states of crystal growth in three dimensions

A new Markov process describing crystal growth in three dimensions is introduced. States of the process are configurations of the crystal surface, which has a terrace-edge-kink structure. The states are continuous along edges but discrete across edges, in accordance with the very different rates for the two types of captures of particles. Stationary distributions, describing steady crystal growth, are found in general. To our knowledge, these are the first examples of stationary distributions for layered crystal growth in three dimensions. The steady growth rate and other quantities are obtained explicitly for two interacting edges. For many interacting edges, growth behavior is determined (a) in various asymptotic regimes including thermodynamic limits, (b) via simulations, and (c) using series (cluster) expansions in the slope of the surface, the first three coefficients being computed. The theoretical growth rates show a marked dependence on surface dimensions. This may contribute to the size dependence and dispersion in the observed growth rate of small crystals.     

Real-Time Reconfigurable Interconnections for Parallel Optical Processing

In this letter we describe the advantages of a dynamic optical interconnection system for parallel information processing applications. The system is based on a liquid crystal television which acts as a binary phase-only spatial light modulator. We describe example algorithms where reconfigurable interconnects would be useful and present results of several interconnection topologies which have been implemented.Presented at the International Commission for Optics Topical Meeting, Kyoto, 1994.     

辐射在CH泡沫中传输的数值模拟

利用一维多群辐射输运程序对辐射在CH泡沫中的传输过程进行了数值模拟,给出一些细致的物理图像和定量结果。在一定的入射辐射流条件下,密度变化对辐射传输特征、辐射加热介质的热力学平衡弛豫过程有重要影响。随着密度下降,辐射由亚声速传输转变为超声速传输,辐射在传输过程中的能谱形状也不同。     

Research on the defect structure and g factors for the tetragonal (CrO4)3− impurity center in ZrSiO4: Cr5+ crystal

ABSTRACT

The EPR g factors g// and g⊥ for the tetragonal (CrO₄)^3? impurity center in ZrSiO4: Cr⁵⁺ crystal are studied from the high-order perturbation formulas based on the two-mechanism (the crystal field and charge-transfer mechanisms) model. The studies indicate that differing from the tetragonally-elongated host (SiO4)^4- tetrahedron, the dominant defect structure of the substitutional (CrO₄)^3? tetrahedron is tetragonally- compressed with the ground state |d_z² due to the Jahn-Teller distortion. Furthermore, the agreement of g factors between calculation and experiment requires a small admixture of the first excited state |d_x²_?y² to the ground state |d_z² due to the vibrational motion of ligands, which leads a compressed (CrO₄)^3? tetrahedron to become a twinkling elongated one, These results are discussed.     

Electric field assisted annealing effects on microstructure and ionic conductivity in ceria/YSZ oxide heterostructures

The effect of electric field assisted annealing on the microstructure, composition and ionic conductivity properties in CeO₂/YSZ oxide heterostructures have been investigated using molecular dynamics simulations. Amorphization–recrystallization steps were performed with and without external electric field of strength 10?MV/cm along three different orientations: in-plane (YZ), normal (X) and 45° resultant (XY) with respect to the oxide heterointerfaces. The microstructural and compositional differences at the interfaces and in the interior of the oxide heterolayers were evaluated and were found to show a clear correlation with the orientations of the applied field. In particular, the XY configuration displayed a compressive lattice strain of ～9% along with a reduced oxygen vacancy concentration when compared to the others. Ionic density profiles suggest pronounced segregation (～60% higher compared to the average value in the interior) of yttrium ions closer to the YSZ/CeO₂ interface for the XY configuration. Other configurations exhibit minimal to no such variations. These microstructural differences are found to affect the number of mobile charge carriers and the activation barriers associated with ionic migration through the oxide lattice and consequently, influence the ionic conductivity.     

Dislocation-density-based constitutive modelling of tensile flow and work-hardening behaviour of P92 steel

The flow and work-hardening behaviour of tempered martensitic P92 steel have been investigated using phenomenological constitutive model in the temperature range 300–873 K for the strain rates ranging from 3.16 × 10^?5 to 1.26 × 10^?3 s^?1. The analysis indicated that the hybrid model reduced to Estrin–Mecking (E–M) one-internal-variable model at intermediate and high temperatures. Further, the analysis also indicated that dislocation dense martensite lath/cell boundaries and precipitates together act as effective barriers to dislocation glide in P92 steel. The flow behaviour of the steel was adequately described by the E–M approach for the range of temperatures and strain rates examined. Three distinct temperature regimes have been obtained for the variations in work-hardening parameters with respect to temperature and strain rate. Signatures of dynamic strain ageing in terms of the anomalous variations in work-hardening parameters at intermediate temperatures and the dominance of dynamic recovery at high temperatures have been observed. The evaluation of activation energy suggested that deformation is controlled by the dominance of cross-slip of dislocations at room and intermediate temperatures, and climb of dislocations at high temperatures.