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881.
882.
Micro- or nanoelectromechanical system (MEMS/NEMS) is a multidisciplinary field, which has witnessed explosive growth during the past decades. The current materials for MEMS are dominated by Si thanks to the fully based technology for CMOS. However, Si has its own intrinsic limitations such as poor mechanical or tribological properties and poor thermal stability. Carbon-based materials such as diamond, carbon nanotube, and graphene possess excellent properties such as low mass, high Young's modulus, high thermal conductivity, hydrophobic surface, and tailorable electronic configuration, which make these materials promising for MEMS/NEMS applications with diverse and much better performance than Si. In this review, we describe the recent progress of carbon-based materials for MEMS/NEMS with focus on diamond, carbon nanotube, and graphene. The growth of these carbon materials is briefly described and only selected properties are discussed with respect to MEMS/NEMS applications. The fabrication process for suspended structures of these materials toward MEMS/NEMS is comprehensively reviewed from the recent literatures. Special attention is devoted to the state-of-the-art of MEM/NEM switches based on these carbon materials, one of the most important fields in MEMS/NEMS. Finally, the application of carbon-based MEM/NEM switches to microwave field is critically analyzed. 相似文献
883.
Michael Barot 《代数通讯》2013,41(10):3613-3628
In association with a finite dimensional algebra A of global dimension two, we consider the endomorphism algebra of A, viewed as an object in the triangulated hull of the orbit category of the bounded derived category, in the sense of Amiot. We characterize the algebras A of global dimension two such that its endomorphism algebra is isomorphic to a cluster-tilted algebra with a cyclically oriented quiver. Furthermore, in the case that the cluster tilted algebra with a cyclically oriented quiver is of Dynkin or extended Dynkin type then A is derived equivalent to a hereditary algebra of the same type. 相似文献
884.
885.
We have shown in a recent study that substitution of Ho3+ ions (4f10; magnetic momen μB) in La0.7Ca0.3MnO3 causes significant reduction in electrical resistivity compared with Y3+ (4d0; non-magnetic) ion substitution. This reduction in resistivity was attributed to the reduced spin disorder scattering in La0.7Ca0.3MnO3 samples containing magnetic Ho3+. We have estimated the Mn-spin canting angles in Ho3+ - and Y3+-doped La0.7Ca0.3MnO3 compounds from the resistivity data using the magnetic localization model. We find that the canting angles of the Mn spins in the Ho3+ doped compounds are smaller than those obtained for the Y3+-doped compounds for all compositions and at all applied magnetic fields, showing clearly a reduction in the spin disorder in the former. The difference between the T C values for Ho3+ - and Y3+-doped compounds for all compositions may be attributed to the presence of an internal field due to Ho3+ doping. This internal field may be responsible for the decrease in spin disorder in the Ho3+-doped compounds. The increase in the canting angles with increase in Ho3+ and Y3+ content could be attributed to the decrease in the strength of the ferromagnetic exchange interactions. A strong ferromagnetic coupling (as discussed recently by the present authors and co-workers) of Ho3+ moments with the Mn moments is responsible for the observed behaviour. 相似文献
886.
Molecular dynamics (MD) simulations of diffusion couple tests were conducted between carbon (diamond/graphite) and iron at three different temperatures (300, 800 and 1600 K) and contact times (0, 40 and 80 ps) to investigate the chemical interaction between carbon and iron. Two different carbon structures, namely, diamond (cubic) and graphite (hexagonal), were considered. Diffusion of carbon into iron was observed only when a graphite interlayer was added to the diamond surface. When diamond alone was used, no diffusion was observed. This result provides corroborating evidence that diamond tool wear in the machining of iron occurs via a mechanism that involves an initial graphitization of diamond followed by diffusion of the newly formed graphite into the iron workpiece. 相似文献
887.
Tomoaki Masuzawa Masanori Onishi Ichitaro Saito Takatoshi Yamada Angel T. T. Koh Daniel H. C. Chua Shuichi Ogawa Yuji Takakuwa Yusuke Mori Tatsuo Shimosawa Ken Okano 《固体物理学:研究快报》2013,7(7):473-476
High‐sensitivity ultraviolet (UV) photodetection has been attempted by utilizing the carrier multiplication effect in amorphous selenium. The prototype photodetector presented in this Letter showed an extremely high sensitivity to UV light, so that up to 1000 carriers are generated per incident photon. This result should lead to the development of an ultrahigh‐sensitivity photodetector that can be used for spectrometric applications covering the visible to UV region. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
888.
Yu. G. Skripka 《辐射效应与固体损伤》2013,168(4):211-213
The ion scattering by the surface of crystals has been studied when there are halfchannels on the crystal surface, which are formed by close packed atomic rows of the first and the second layers of crystals. The obtained results are compared with one of ion scattering by directions, which have no surface halfchannels. 相似文献
889.
Shuangchen Lu Mingguang Yao Quanjun Li Hang lv Dedi Liu Bo Liu Ran Liu Linhai Jiang Zhen Yao Zhaodong Liu Bo Zou Tian Cui Bingbing Liu 《Journal of Raman spectroscopy : JRS》2013,44(2):176-182
High‐pressure Raman measurements on single‐wall carbon nanotubes (SWNTs) have been carried out in a diamond anvil cell by using two wavelength lasers: 830 and 514.5 nm. Irrespective of using a pressure transmitting medium (PTM) or not, we found that nanotubes undergo similar transformations under pressure. The pressure‐induced changes in Raman signals at around 2 and 5 GPa are attributed to the nanotube cross‐section transitions from circle to ellipse and then to a flattened shape, respectively. Especially with pressure increasing up to 15–17 GPa, we observed that the third transition takes place in both the Raman wavenumber and the linewidth of G‐band. We propose explanations that the interlinked configuration with sp3 bonds forms in the bundles of SWNTs under pressure, which was the cause for the occurrence of those Raman anomalies, similar to the structural‐phase transition of graphite above 14 GPa. Our TEM observations and Raman measurements on the decompressed samples support this transition picture. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
890.
Boris A. Kolesov 《Journal of Raman spectroscopy : JRS》2013,44(12):1786-1788
This article deals with the experimental determination of separate vibrational anharmonic contributions to the self‐energy of phonons in any crystals based on temperature dependence of their Raman spectra. We propose a new approach to find each anharmonic contribution by using special temperature points. We apply the approach to diamond, silicon, and crystalline α‐S8 and show that our results for summarized anharmonicity in diamond and silicon are in good agreement with the values obtained previously for these systems by other researchers. Copyright © 2013 John Wiley & Sons, Ltd. 相似文献