Nanocomposites of magnetic cobalt nanoparticles and cellulose

Polymeric matrices with stabilized metallic nanoparticles constitute an important class of nanostructured materials, because polymer technology allows fabrication of components with various electronic, magnetic and mechanical properties. The porous cellulose matrix has been shown to be a useful support material for platinum, palladium, silver, copper and nickel nanoparticles. In the present study, nanosized cobalt particles with enhanced magnetic properties were made by chemical reduction within a microcrystalline cellulose (MCC) matrix. Two different chemical reducers, NaBH₄ and NaH₂PO₂, were used, and the so-formed nanoparticles were characterized with X-ray absorption spectroscopy, X-ray diffraction, scanning electron microscopy and transmission electron microscopy. These experimental techniques were used to gain insight into the effect of different synthesis routes on structural properties of the nanoparticles. Magnetic properties of the nanoparticles were studied using a vibrating sample magnetometer. Particles made via the NaBH₄ reduction were amorphous Co-B or Co oxide composites with diminished ferromagnetic behaviour and particles made via the NaH₂PO₂ reduction were well-ordered ferromagnetic hcp cobalt nanocrystals.     

Low‐temperature growth of high quality AlN films on carbon face 6H‐SiC

AlN films have been grown on atomically flat carbon face 6H‐SiC (000 ) substrates by pulsed laser deposition and their structural properties have been investigated. In‐situ reflection high‐energy electron diffraction observations have revealed that growth of AlN at 710 °C proceeds in a Stranski–Krastanov mode, while typical layer‐by‐layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X‐ray rocking curves for 0004 and 10 2 diffractions of the RT‐grown AlN film are 0.05° and 0.07°, respectively. X‐ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

In‐situ X‐ray diffraction of mechanically milled β‐Al3Mg2 powders

The structure evolution during heating of mechanically milled single‐phase β‐Al₃Mg₂ has been investigated by in‐situ X‐ray diffraction. The nanoscale supersaturated Al(Mg) solid solution formed during milling transforms back to the original β‐Al₃Mg₂ phase through a sequence of phase transformations. At low temperatures, an increasing amount of Mg is rejected from the solid solution with increasing temperature. At intermediate temperatures, the β′‐phase, a hexagonal phase with approximate composition Al₃Mg₂, forms. Finally, at higher temperatures the original β‐Al₃Mg₂ phase is restored, indicating that the formation of the supersaturated solid solution during milling can be reversed by appropriate heat treatment. The phase transformations during heating are gradual and the temperature ranges of stability of the different structure configurations are quite large, all exceeding 50 K. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers

In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be ∼0.5%, which reflects the actual effect of lattice strain on composition during growth stage.     

Uniform and minimal {0,1} – cp matrices

Let A be an n?×?n real matrix. A is called {0,1}-cp if it can be factorized as A?=?BB ^T with b_ij =0 or 1. The smallest possible number of columns of B in such a factorization is called the {0,1}-rank of A. A {0,1}-cp matrix A is called minimal if for every nonzero nonnegative n?×?n diagonal matrix D, A-D is not {0,1}-cp, and r-uniform if it can be factorized as A=BB ^T, where B is a (0,?1) matrix with r 1s in each column. In this article, we first present a necessary condition for a nonsingular matrix to be {0,1}-cp. Then we characterize r-uniform {0,1}-cp matrices. We also obtain some necessary conditions and sufficient conditions for a matrix to be minimal {0,1}-cp, and present some bounds for {0,1}-ranks.     

Structural and optical properties of single-crystal ZnMgO thin films grown on sapphire and ZnO substrates by RF magnetron sputtering

High-quality ZnMgO films were grown by the radio frequency (RF) magnetron sputtering technique in pure oxygen ambient. Single-crystal films were obtained, when the Mg concentration was Zn_0.87Mg_0.13O or lower in the case of ZnMgO/Al₂O₃ and when it was Zn_0.65Mg_0.35O or lower in the case of ZnMgO/ZnO. Polycrystalline films were obtained when the growth temperature was lower than 500 °C, regardless of the Mg concentration. Position of the photoluminescence (PL) ultraviolet (UV) peak of the ZnMgO film shifted with the addition of Mg, from 3.33 eV (ZnO) to 3.51 eV (Zn_0.87Mg_0.13O) and 3.70 eV (Zn_0.65Mg_0.35O). It was also observed that growth of the ZnMgO films at higher temperature resulted in higher band-gap energy. It was proposed that this phenomenon is because concentration of the substitutional Mg atoms occupying Zn site is increased as the growth temperature increases.     

Elasticity, thermal expansion and compressive behavior of Mg65Cu25Tb10 bulk metallic glass

The existence of special covalently bonded short-range ordering structures in a Mg₆₅Cu₂₅Tb₁₀ bulk metallic glass (BMG) is confirmed by thermal expansion and compression behavior. Under ambient conditions the linear thermal expansion coefficient obtained is almost constant in the glassy state with a value of 4.0 × 10⁻⁵ K⁻¹. By fitting the static equation of state at room temperature under ambient conditions we find the value for bulk modulus B of 48.7 GPa, which is in excellent agreement with the experimental study by pulse-echo techniques of 44.7 GPa. Unlike many bulk metallic glasses, such as Zr- and Pd-based, which bulk modulus is much larger than 100 GPa, the value B of Mg₆₅Cu₂₅Tb₁₀ BMG falls into the range of SiO₂ and fluorozirconate glass ZBLAN. Moreover, the elastic constant of the Mg₆₅Cu₂₅Tb₁₀ BMG is almost the same as those of ZBLAN. No evidence for the high-pressure phase transitions of the Mg₆₅Cu₂₅Tb₁₀ BMG has been found up to 31.19 GPa at room temperature.     

Stress‐induced Curie temperature increase in the Fe64Ni36 invar alloy

Structural and magnetic changes on invar Fe₆₄Ni₃₆ alloy (T_C = 500 K) produced by mechanical milling followed by heating up to 1073 K, were investigated by neutron diffraction, magnetization measurements, X‐ray diffraction under high pressures and X‐ray absorption at both Fe and Ni K‐edges. We argue that the strain induced in the Fe₆₄Ni₃₆ material after this treatment mainly affects the Fe sites due to the magnetovolume coupling, the most notorious feature being the increase of the Curie temperature (ΔT_C = 70 K). (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates

A pulsed KrF excimer laser of irradiance of about 10⁸ W/cm² was utilized to synthesize Si nanocrystals on SiO₂/Si substrates. The results were compared with that ones obtained by applying low bias voltage to Si(1 0 0) target in order to control the kinetic energy of plasma ions. Glancing incidence X-ray diffraction spectra indicate the presence of silicon crystalline phases, i.e. (1 1 1) and (2 2 0), on SiO₂/Si substrates. The average Si nanocrystal size was estimated to be about 45 nm by using the Debye-Scherrer formula. Scanning electron microscopy and atomic force microscopy images showed the presence of nanoparticles of different size and shape. Their distribution exhibits a maximum concentration at 49 nm and a fraction of 14% at 15 nm.     

Atypical grain growth for (2 1 1) CdTe films deposited on surface reconstructed (1 0 0) SrTiO3 substrates

The (1 0 0) SrTiO₃ substrate has emerged as the oxide substrate of choice for the deposition of a wide variety of materials. The substrate's unavoidable miscut leads to a step-terrace morphology when heated to high temperatures. This morphological transition is accompanied by an atomic scale repositioning of the uppermost terrace atoms, the nature of which is strongly dependent on the substrate temperature and ambient atmosphere used. Here, we report the deposition of CdTe films on the as-received and reconstructed surfaces of (1 0 0) SrTiO₃. The as-received substrate gives rise to a [1 1 1] CdTe film with four equally distributed in-plane grain orientations. The surface reconstruction, on the other hand, gives rise to an unprecedented reorientation of the film's grain structure. For this case, a [2 1 1] CdTe film emerges having twelve unevenly distributed in-plane orientations. We attribute the film's grain structure to an atomic scale surface reconstruction, with the anisotropic distribution of grain-types arising from a preferential formation due to the step edges.