Catalytically active CNT–polymer-membrane assemblies: From synthesis to application

A new membrane electrode assembly set up for catalytic processes containing carbon nanotubes has been developed. The process includes the nanotube synthesis, sputter deposition of platinum as catalyst and the membrane casting. Aligned nanotube carpets were grown from toluene/ferrocene solutions and sputtered with platinum. Subsequently the assembly was investigated using cyclic voltammetry to confirm a sufficient catalyst activity. A procedure was developed to embed the carbon nanotubes doped with catalyst into SPEEK membranes, while preserving the aligned structure and keeping some surface area of the catalyst-doped nanotubes free of membrane material to allow for easy access to reactants. So far the best results were obtained using an aligned but somewhat loose nanotube structure and a deposition of 0.034 mg/cm² Pt, forming a combination of small catalyst clusters and a thin film. The assemblies are optimized in respect to application in fuel cells and functional membranes.     

Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes

Angular distributions of sputtered germanium atoms during the grazing incidence of argon ions were investigated. Argon ion beams with angles of incidence of 75° and 80° and with ion energy of 20 keV were used in sputtering experiments. TXRF analysis showed to be an excellent method for measuring the angular distribution of sputtered atoms due to its low detection limit under total reflection conditions. The experimental data are compared to Monte-Carlo simulations. The observed differences are discussed, and suggestions for improving the Monte-Carlo simulation of ion sputtering are made.     

Theoretical Simulations of Irradiation-Induced Sputtering at Tungsten Surface

The irradiation-induced sputtering and the structural damage at tungsten surface are investigated by using molecular dynamics simulations at the level of quantum mechanics. Our simulations indicate that the sputtered atoms appear when the energy of incident primary knock-on atom (PKA) is more than 200 eV and the incident angle of the PKA is larger than 65°. Meanwhile, the irradiation-induced vacancies are less when the incident angle of PKA is in the range of 45°-65°. So, the optimum incident angles of PKA are suggested to reduce the irradiation-induced damage of the W surface. Furthermore, we find that the interstitials contained in the systems accelerate the sputtering whereas the intrinsic vacancies suppress the sputtering when the PKA is near the defects.     

Vanadium oxide thin films produced by magnetron sputtering from a V2O5 target at room temperature

Vanadium oxide thin films were grown by RF magnetron sputtering from a V₂O₅ target at room temperature, an alternative route of production of vanadium oxide thin films for infrared detector applications. The films were deposited on glass substrates, in an argon–oxygen atmosphere with an oxygen partial pressure from nominal 0% to 20% of the total pressure.X-ray diffraction (XRD) and X-ray photon spectroscopy (XPS) analyses showed that the films were a mixture of several vanadium oxides (V₂O₅, VO₂, V₅O₉ and V₂O₃), which resulted in different colors, from yellow to black, depending on composition. The electrical resistivity varied from 1 mΩ cm to more than 500 Ω cm and the thermal coefficient of resistance (TCR), varied from −0.02 to −2.51% K⁻¹.Computational thermodynamics was used to simulate the phase diagram of the vanadium–oxygen system. Even if plasma processes are far from equilibrium, this diagram provides the range of oxygen pressures that lead to the growth of different vanadium oxide phases. These conditions were used in the present work.     

Comments on “role of impurities on the primary process for f-coloring in alkali halides”

Growth of the V₄ centers during and after pulsed electron irradiation of KBr was measured between 77K and 200K. It is found that the growth during pulsed irradiation is clearly different from that due to the thermal motion of the H centers. Critical discussions on the mechanism of the interstitial interaction in the primary step of the Frenkel-pair creation were made.     

Annealing of defect clusters in irradiated tungsten

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in tungsten irradiated at reactor ambient tempeaature, ～ 70°C. Annealing, consisting of the growth and eventual elimination of the clusters, is observed to occur in two stages, one at temperatures below 435°C and one at temperatures above 740°C, which are interpreted as being due to interstitial and vacancy migration, respectively. The changes in defect cluster size and density are paralleled by similar changes in the measured strength of the material, and can be quantitatively correlated with the shear stress on the basis of a model of dislocation movement through a random array of obstacles.     

Anisotropic angular distribution of sputtered atoms

The sputtering yield angular distributions have been calculated on the basis of the ion energy dependence of total sputtering yields for Ni and Mo targets bombarded by low-energy Hg⁺ ions. The calculated curves show excellent agreement with the corresponding Wehner's experimental results of sputtering yield angular distributions. This fact clearly demonstrates the intrinsic relation between the ion energy dependence of total sputtering yields and the sputtering yield angular distribution. This intrinsic relation had been ignored in Yamamura's papers [Yamamura, Y. (1982). Theory of sputtering and comparison to experimental data, Nucl. Instr. and Meth., 194, 515–522; Yamamura, Y. (1981). Contribution of anisotropic velocity distribution of recoil atoms to sputtering yields and angular distributions of sputtered atoms, Rad. Eff., 55, 49–55.] due to some obvious mistakes.     

Features of sputtering of nitrides and their components

The sputtering behaviour of hexagonal or wurtzite polycrystal nitrides of boron, aluminium, and gallium was explored employing methods of molecular dynamics. The sputtering yield Y of nitrides and the average energy ē ₁ of emitted particles were studied as dependent on the mass m ₁ of bombarding He, Li, B, N, Ne, Al, Ar, Ni, Ga, Kr, and Xe ions with the initial energy E ₀ between 200 and 10,000 eV. Y(m ₁) and ē ₁(m ₁) were researched upon for preferential sputtering of nitride components at low E ₀. It was revealed that the ratio between the sputtering yield of the light component and that of the heavy one depends on ion energy and mass. At E ₀=200 eV and m ₁=40, the ratio for BN, AlN, and GaN amounts to 1.2, 2.2, and 2.4, respectively. For nitride components, an anomalous dependence of sputtering on ion mass was found, its maximum occurring at a certain ratio m ₂/m ₁, where m ₂ is the averagè mass of two nitride components.     

Accommodation coefficients for low-energy ions on metal surfaces

The interaction of low-energy ions (E = 3 to 100 eV) with the surface of a solid cannot be treated in terms of gas dynamics. The scattering of particles at an energy of E _o > 20 eV may be explained in terms of binary collisions with the atoms of the target. The validity of the single collision model with free surface atoms for medium energies from 10 to 100 eV and even down to 1 eV was confirmed on the basis of both experimental and computational data. This paper describes experimental studies of the secondary ion emission from the (100) and (110) faces of a Mo single crystal and both experimental and theoretical studies of alkaline ion accommodation coefficient on polycrystalline Mo within the energy range E = 3 to 50 eV with a varying direction of the primary ion beam from normal to the glancing angle of incidence (ρ = 0 to 75°). On the basis of the retarding potential method using a spherical condenser whose central electrode was the target, we measured the energy distribution of secondary ions. Calculations have been performed for the energy of scattered ions and the high energy portion of accommodation coefficient on the basis of single and double binary collisions using the Born-Mayer potential and taking into consideration the influence of adsorption forces at the surface of the target.     

Realization of p-ZnO thin films by GaP codoping

An attempt has been made to realize p-ZnO by directly doping (codoping) GaP into ZnO thin films. GaP codoped ZnO thin films of different concentrations (1, 2 and 4 mol%) have been grown by RF magnetron sputtering. The grown films on sapphire substrate have been characterized by X-ray diffraction (XRD), Hall measurement, Photoluminescence (PL) and Energy dispersive spectroscopy (EDS) to validate the p-type conduction. XRD result shows that all the films have been preferentially oriented along (0 0 2) orientation. The decrease of full-width at half maximum (FWHM) with increase in GaP doping depicts the decrease in native donor defects. Hall measurement shows that among the three films, 2 and 4 mol% GaP doped ZnO shows p-conductivity due to the sufficient amount of phosphorous incorporation. It has been found that low resistivity (2.17 Ωcm) and high hole concentration (1.8×10¹⁸ cm⁻³) for 2% GaP codoped ZnO films due to best codoping. The red shift in near-band-edge (NBE) emission and donar-acceptor-pair (DAP) and neutral acceptor bound recombination (A°X) observed by room temperature and low temperature (10 K) PL, respectively, well acknowledged the formation of p-ZnO. The incorporated phosphorous in the film has been also confirmed by EDS analysis.