SIMS as a subnanometer probe: A new tool for chemical profile analysis of grafted molecules

The complexity of modern engineered surfaces requires the development of very powerful methods to analyze and characterize them. We demonstrate that it is possible to obtain chemical information about the skeleton of organic molecules constituting SAMs grafted on a silicon surface by using a new type of SIMS method. A profile can be achieved by the investigation of the temporal variation of secondary ion intensities that correspond to the fractional parts of the molecule constituting the SAMs. The equivalent ablation rate is less than 0.5 nm/min.     

Surface Modification of Fine Particles with a SnO<Subscript>2</Subscript> Film by Using a Polyhedral-Barrel Sputtering System

Fine particles were modified with a thin film of SnO₂ by using a barrel sputtering system that is a dry process. The conditions for the preparation of SnO₂ were studied by reactive sputtering onto a glass plate substrate. The optimal conditions for the preparation of tetragonal SnO₂ were identified as 60% partial oxygen pressure and 1.0 Pa total gas pressure with the substrate at room temperature. Under the optimized conditions, the surfaces of Al flake particles were modified with a thin film of SnO₂. XRD and SEM/EDS analysis of the prepared samples showed that the Al particle surfaces were uniformly modified by a thin film of SnO₂ in all cases. The film thicknesses were 80, 130, and 180 nm at RF outputs of 195, 350, and 490 W. These measured thicknesses coincided with the values estimated from the interference colors of the samples.     

Novel disposable bismuth-sputtered electrodes for the determination of trace metals by stripping voltammetry

This work describes a novel type of bismuth electrode for stripping voltammetry based on coating a silicon substrate with a thin bismuth film by means of sputtering. The bismuth-based sensors were characterized by optical methods (scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD)) and as well as by linear sweep voltammetry. Subsequently, the electrodes were tested for the detection of low concentrations of trace metals (Cd(II), Pb(II) and Ni(II)) by stripping voltammetry. Well-formed stripping peaks were observed for trace concentrations of the target analytes demonstrating “proof-of-principle” for these sensors. This type of electrochemical device, utilizing thin-film technology for the formation of the bismuth film, holds promise for future applications in trace metal analysis.     

Janus particles with a functional gold surface for control of surface plasmon resonance

We report in this study the presence of Janus particles, which are candidates for use with electronic color papers. We used negatively charged polystyrene particles (370 nm) as the core particles, and gold was then sputtered onto their packed monolayer under several conditions. The sputtered particles were next redispersed into the aqueous medium by gentle sonication. Gold nanoparticles localized on one side of the cores could also serve as seeds for subsequent shell growth by electroless gold plating. Through these treatments, a series of well-dispersed Janus particles were obtained with gold nanostructures of different size and shape only on one side. Their dispersions showed different colors originating from the surface plasmon resonance absorption of gold nanoparticles localized on the hemisphere. The particles obtained by this approach have potential applications such as in sensors and electronic color paper.     

Microstructure evolution of room-temperature-sputtered ITO films suitable for silicon heterojunction solar cells

Thickness influence on structural, optical and electrical properties of sputtered indium tin oxide (ITO) with thickness ranging from 60 up to 430 nm films has been studied. At the increase of the film thickness crystallinity degree and grain size increased, whereas tensile structural distortion as well as resistivity decreased. It was observed that a microstructure evolution takes place: the initial amorphous layer evolved in polycrystalline phase, with a grain–subgrain surface morphology. Carrier concentration increased at the increase of the film thickness and a general relationship between electrical characteristics and structural distortion has been found. In thinner films larger tensile distortion allowed to include larger amount of interstitial O and/or Sn atoms in the lattice. An appreciable impact of the thickness was also observed on electro-optical properties in terms of changes in energy gap, resistivity and optical absorption. Silicon heterojunction solar cells have been produced and J_sc as high as 33.0 mA/cm² has been obtained.     

C+轰击铍的分子动力学模拟

使用分子动力学模拟方法研究了入射能量对C⁺离子与Be样品表面相互作用的影响。模拟结果表明,随着C⁺离子的入射能量增大,C⁺离子注入深度也增加,Be原子的溅射产额近似线性增加,而滞留在样品中的C原子数量变化不大,在C⁺离子轰击Be样品的初始阶段,样品中Be原子的溅射产额较大,而随着C⁺离子注入剂量的增加,Be原子的溅射产额逐渐减小并趋于稳定。在此作用过程中,在样品表面形成一个富C层,减缓了样品中Be原子的溅射速率,起到了保护Be样品的作用。     

Electrical properties of gadolinia-doped ceria thin films deposited by sputtering in view of SOFC application

Gadolinia-doped ceria (GDC) remains, up to now, the most promising candidate for replacing yttria-stabilised zirconia (YSZ) as electrolyte for solid oxide fuel cells (SOFC) operating at intermediate temperature. Literature data point out that GDC could be used as electrolyte, anode material, or interlayers for avoiding the chemical interactions occurring at the interfaces. In the present work, GDC thin layers were produced by d.c. reactive magnetron sputtering and deposited over a thickness domain between 450 nm and 5.5 µm. According to our knowledge, the deposition of GDC sputtered layers has never been reported. The physicochemical features of these thin films have been characterised by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Impedance measurements have been carried out in order to determine the electrical properties of electrolyte thin films and in particular their ionic conductivity.Presented at the OSSEP Workshop Ionic and Mixed Conductors: Methods and Processes, Aveiro, Portugal, 10–12 April 2003     

Nickel-oxide-based electrochromic films with optimized optical properties

Reactive DC magnetron sputtering was used to grow thin films of Ni (93%)-V (7%) oxide and Ni (62%)-Al (38%) oxide. Both films showed electrochromism in KOH. The addition of Al diminished the luminous absorbance significantly, while the charge capacity was maintained. The Al-containing films are superior to the conventional Ni oxide electrodes as regards applications requiring high-bleached-state transmittance.Presented at the 3rd International Meeting on Advanced Batteries and Accumulators, 16–20 June 2002, Brno, Czech Republic     

Measurement and modeling of work function changes during low energy cesium sputtering

In this paper, a H-terminated silicon wafer was bombarded by low energy cesium ions during ToF-SIMS analysis and work function variations of the target were measured for different analysis conditions. This measurement was performed by measuring the shift of the secondary ions energy distributions with a reflectron type analyzer. At first, the silicon’s work function change was found to be −2.3 eV during 500 eV Cs⁺ bombardment at 45°. This effect is due to the creation of a dipolar layer at the surface of the silicon by the implanted cesium. Then the work function variation was measured at 300 eV for varying cesium surface concentrations. The work function was found to decrease monotonously with the increasing cesium surface concentration, as during cesium adsorption experiments. The results were modeled following three different approaches and the value of the effective polarizability α of cesium was found to be equal to 1.9 × 10⁻³⁹ C m²/V. Finally, the effect of the bombardment energy on the work function variation was studied for beams with energies ranging from 250 to 2000 eV. The effective polarizability of cesium was found to increase with increasing Cs beam energy.     

Diffusion barrier performance of TiVCr alloy film in Cu metallization

In this study, 15 nm-thick sputter-deposited TiVCr alloy thin films were developed as diffusion barrier layers for Cu interconnects. The TiVCr alloy film tends to form a solid solution and a simple crystal structure from the constituted elements. Under TEM, the 15 nm-thick as-deposited TiVCr alloy film was observed to have a dense semi-amorphous or nanocrystalline structure. In conjunction with X-ray diffraction, transmission electron microscopy, and energy-dispersive spectroscopy analyses, the Si/TiVCr/Cu film stack remained stable at a high temperature of 700 °C for 30 min. The electrical resistance of Si/TiVCr/Cu film stack remained as low as the as-deposited value. These indicated that the mixed TiVCr refractory elements’ alloy barrier layer is very beneficial to prevent Cu diffusion.