非水溶性光致聚合物光子晶体的研制

报道了一种新型的利用激光全息技术制作光子晶体的记录材料,即自制的非水溶性光致聚合物.用绿光作为光源对材料性能参量做简单测试,经测试其衍射效率可达85%,在波长为514.5 nm处拥有较高的吸收率,且该材料的后处理过程简单,只需热烘.利用Matlab简单模拟全息法制作光子晶体的过程,经模拟得到干涉的光束越多,光子晶体的晶格结构越复杂.设计了制作二维、三维光子晶体的实验光路,分光元件分别为掩模板和去顶棱镜.实验结果表明,利用非水溶性光致聚合物可制作大面积、大体积、耐高温和高强度的二、三维光子晶体,且其晶体结构与Matlab模拟的结果基本一致|利用非水溶性光致聚合物作为记录材料时,光路的搭建是影响实验结果的重要因素.     

大面积金纳米线光栅的制备

利用激光干涉光刻和金纳米颗粒胶体溶液制备了宽度在100 nm以下且总面积达到平方厘米量级的金纳米线光栅结构.制备过程中,首先在表面镀有厚度约为200 nm的铟锡氧化物薄膜的面积为1 cm×1 cm的玻璃基片表面旋涂光刻胶,然后利用紫外激光干涉光刻制备光刻胶纳米光栅结构.有效控制干涉光刻过程中的曝光量、显影时间,获得小占空比的光刻胶光栅.再以光刻胶纳米光栅作为模板,旋涂金纳米颗粒胶体溶液.充分利用金纳米颗粒胶体溶液在光刻胶表面浸润性差的特点,限制旋涂后留存在光刻胶光栅槽中金纳米颗粒的数量,从而达到限制金纳米线宽度的目的.最后在250℃将样品进行退火处理5 min.获得了周期为400 nm且占空比小于1:4的金纳米线光栅结构,其有效面积为1 cm².以波导共振模式与粒子等离子共振模式间耦合作用为特征的光谱学响应特性验证了波导耦合金属光子晶体的成功制备,为小传感体积新型生物传感器的开发提供了性能良好的金属光子晶体芯片.     

Enhanced complete photonic band gap in the optimized planar diamond structure

The diamond photonic crystal with dielectric rods has been modified to enlarge the fundamental band gap. By planarizing the diamond structure and reducing the thickness of the hexagonal meshes, the band gap can be increased substantially. The band gap is 29% for a refractive index contrast of 3.6. The modified structure is amenable to fabrication at optical and infrared wavelengths using state-of-the-art silicon-processing methods. Transfer matrix calculations demonstrate a large attenuation within the band gap.     

二维InSe/SnSe2范德华异质结的电子结构和光学特性研究

本文构建了三种不同堆叠形式下的二维InSe/SnSe₂范德华异质结模型,利用基于密度泛函理论的第一性原理方法综合考察了二维InSe/SnSe₂三种不同堆叠情况下的几何构型及稳定性,在此基础上选取具有最稳定性能的构型.该异质结呈现出Ⅱ型能带对齐特征,带隙值为1.118 eV,可以实现电子-空穴的有效分离.另外,相比与单层二维InSe/SnSe₂范德华异质结的光吸收能力达到明显提升,在紫外光范围内吸收系数达到10~6 cm^-1.研究结果将为相关物理实验及机理研究提供理论基础,对二维InSe/SnSe₂范德华异质结在光电器件中的应用具有重要的物理意义.     

Dual-channel tunable near-infrared absorption enhancement with graphene induced by coupled modes of topological interface states

The dual-channel nearly perfect absorption is realized by the coupled modes of topological interface states (TIS) in the near-infrared range. An all-dielectric layered heterostructure composed of photonic crystals (PhC)/graphene/PhC/graphene/PhC on GaAs substrate is proposed to excite the TIS at the interface of adjacent PhC with opposite topological properties. Based on finite element method (FEM) and transfer matrix method (TMM), the dual-channel absorption can be modulated by the periodic number of middle PhC, Fermi level of graphene, and angle of incident light (TE and TM polarizations). Especially, by fine-tuning the Fermi level of graphene around 0.4 eV, the absorption of both channels can be switched rapidly and synchronously. This design is hopefully integrated into silicon-based chips to control light.     

A detailed derivation of eigenvalue equation in two dimensional and three dimensional photonic crystals

A detailed derivation of eigenvalue equation in two dimensional and three dimensional photonic crystals is given by the plane-wave expansion method. Some mathematical formulas such as the rotation of vector, the gradient of scalar, the divergence of the vector, the vector triple product and the conversion between scalar and vector are employed. The eigenvalue equation in photonic crystals has become the important base for obtaining the band structure and the distribution of eigenmode.     

弛豫铁电单晶的研究进展—压电效应的起源研究

由于具有优异的压电性能,弛豫铁电单晶自上世纪90年代问世以来即成为了铁电压电领域研究的热点材料,并被认为是研发下一代高性能换能器、传感器等器件的重要压电材料。弛豫铁电单晶不但压电常数可达2500 pC/N,约为软性Pb(Zr,Ti)O3(PZT)陶瓷的5倍,而且其电致应变滞后也远小于软性PZT陶瓷。因此,弛豫铁电单晶高压电性能的产生机理一直是铁电压电领域的研究热点。本文主要介绍了弛豫铁电单晶材料在近些年的发展,从本征压电效应(晶格压电畸变)的角度归纳总结了弛豫铁电单晶高压电效应的产生机理,着重探讨了弛豫铁电单晶的重要特点—剪切压电效应。在本征效应的基础上,本文对弛豫铁电单晶压电效应与晶体组分、切向以及温度的关系进行了分析。需要指出的是,目前基于本征角度对弛豫铁电单晶高压电效应的分析仍处于定性的阶段,因而还不能完全排除一些可能导致弛豫铁电单晶高压电效应的非本征物理机制。