热管堆在不同基体材料下的燃耗特性分析北大核心CSCD

热管冷却核反应堆具有非能动传热、模块化和固有安全性高等特点,在航空探索、深海作业和偏远地区电力市场上有广泛的应用。以洛斯阿拉莫斯国家实验室开发的5 MWth热管堆为研究对象,选择SS-316,Mo-14Re和SiC作为基体候选材料,采用反应堆蒙特卡罗中子输运分析程序对比分析了以上三种基体堆芯的反应性、中子能谱、增殖性能和燃耗演化。结果表明:为了维持堆芯的10年运行,SS-316,Mo-14Re和SiC三种基体堆芯所需的初始燃料235U富集度分别约为19.35%,28.80%和17.10%,SiC基体堆芯所需的初始燃料235U富集度最小;10年后,SiC基体堆芯产生的易裂变核素(239Pu和241Pu)和次锕系核素(通过分离嬗变可被再次利用)的量最高,分别约为11.91 kg和92.08 g。综合以上研究结果,推荐SiC作为热管冷却核反应堆的基体。     

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate.When the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the device.Moreover,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide layer.Physical mechanism for the HJD-TMOS is analyzed.Comparing with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively.     

Investigation of micropipes in 6H-SiC by Raman scattering

The spectra of 6H-SiC crystals including micropipes have been examined for the Si face using Raman scattering. The first-order Raman features reveal that the intensity of the transverse optical phonon band centered at ∼796 cm⁻¹ is sensitive to the micropipes. And the second-order Raman features of the micropipes in bulk 6H-SiC are well-defined using the selection rules for second-order scattering in wurtzite structure. It is found that there are some second-order peaks missing for the micropipe-including sample, which may be induced by the reduction of the incident laser intensity at around the micropipe, especially the uneven surface in the inner wall of the micropipe. These features might also be employed to characterize other structural defects such as screw-dislocations and threading edge dislocations.     

基质折射率对反常色散散射体散射特性的影响

基于Mie散射理论,给出了散射强度、散射截面及吸收截面的计算公式,并对不同基质中碳化硅材料在反常色散区中的散射特性进行了数值计算与理论分析。结果表明,在反常色散区中,随着基质折射率的增大,散射强度的峰位发生红移,峰值增大;散射截面和吸收截面的峰位发生红移,峰值减小,这为该材料在反常色散区中的光学理论、实验及应用方面提供了理论参考。     

Rf‐GDOES analysis of composite metal/ceramic electroplated coatings with nano‐ to microceramic particles' size: issues in plasma sputtering of Ni/micro‐SiC coatings

Ni matrix composite coatings reinforced with nano‐ and microceramic particles were analyzed by radio frequency glow discharge optical emission spectrometry (Rf‐GDOES). An interesting phenomenon related to the sputtering and excitation modes of this technique was observed. During plasma sputtering with Rf‐GDOES, the micro‐SiC particles were detached from metal matrix and did not contribute to the analytical signals. The same was not found in composite coatings containing nanoceramic particles. This anomalous behavior was confirmed by atomic force microscopy (AFM) investigation and scanning electron microscope (SEM) observations into Rf‐GDOES craters that showed the presence of residual non‐sputtered microparticles. Various attempts were done in order to minimize this problem, mainly by varying the analysis parameters of the used instrumentation, but without any relevant success. Some suggestions were then proposed for explaining the observed phenomenon, moreover possible solutions (e.g. by using a strong magnetic field or changing plasma gas to be more energetic) are discussed. Copyright © 2011 John Wiley & Sons, Ltd.     

Comparison of the formation epitaxial graphenes on Si- and process and properties of C-face 6H-SiC substrates

In this paper,the epitaxial graphene layers grown on Si-and C-face 6H-SiC substrates are investigated under a low pressure of 400 Pa at 1600 C.By using atomic force microscopy and Raman spectroscopy,we find that there are distinct differences in the formation and the properties between the epitaxial graphene layers grown on the Si-face and the C-face substrates,including the hydrogen etching process,the stacking type,and the number of layers.Hopefully,our results will be useful for improving the quality of the epitaxial graphene on SiC substrate.     

SiC晶体的PVT生长系统及测温盲孔对热场的影响

实验中研究了不同结构参数的测温盲孔对晶体生长面热场的影响,结果分析表明:径向温度梯度和轴向温度梯度与测温盲孔的深度和半径近似成正比关系,但测温盲孔尺寸变化对径向温度梯度和轴向温度梯度的影响效果不同;改变测温盲孔尺寸适于调节径向温度梯度;测温盲孔半径和深度的增加均可导致坩埚盖上SiC多晶生长速率提高.     

溅射工艺参数对硅薄膜微结构影响的Raman分析

为了解决碳化硅难以进行光学加工的问题,该文采用射频磁控溅射方法,在碳化硅反射镜坯体上沉积与碳化硅具有相近热膨胀系数且易于进行光学加工的硅薄膜。利用拉曼光谱(Raman)对衬底温度、射频功率、衬底偏压等溅射工艺条件对硅膜微结构的影响进行了分析。研究发现：随着衬底温度的升高,薄膜的晶化率先增大后减小;衬底偏压的增加不利于薄膜有序结构的形成;射频功率对薄膜微结构的影响比较复杂,随着功率的升高,薄膜晶粒尺寸减小,晶化率降低,当射频功率进一步升高时,薄膜中有序团簇尺寸和晶化率逐渐升高。但过高的射频功率反而不利于薄膜的晶化。     

Study of a 4H-SiC epitaxial n-channel MOSFET

Epitaxial channel metal-oxide semiconductor field-effect transistors (MOSFETs) have been proposed as one possible way to avoid the problem of low inversion layers in traditional MOSFETs. This paper presents an equation of maximum depletion width modified which is more accurate than the original equation. A 4H--SiC epitaxial n-channel MOSFET using two-dimensional simulator ISE is simulated. Optimized structure would be realized based on the simulated results for increasing channel mobility.     

NiAl-Cr(Mo)-Cr_xS_y自润滑复合材料的摩擦磨损特性

采用滑动磨损试验方法测试了NiAl-Cr(Mo)-CrxSy自润滑复合材料与SiC陶瓷配副在110～960℃的摩擦磨损特性.结果表明:200～400℃,纳米CrxSy晶粒在复合材料摩擦表面形成较完整的润滑膜,产生自润滑性能;700～900℃,复合材料摩擦表面生成了1～3μm厚、完整的玻璃陶瓷润滑膜,产生了自润滑耐磨性能.2种润滑膜材料均可向SiC表面转移,消除了复合材料/SiC的摩擦状态.随着温度的升高,2种润滑膜材料的强度降低,SiC微凸体压入润滑膜,导致润滑膜的剥落加剧,复合材料的摩擦系数与磨损率升高.