A modified polymethylsilane as the precursor for ceramic matrix composites

A novel SiC precursor, A-PMS, was synthesized through a reaction of polymethylsilane (PMS) with SbCl₃, where the Si-H in PMS reacts with Sb-Cl to form Si-Sb bond with HCl evaporated. A-PMS was used as a precursor to prepare C_f/SiC ceramic matrix composites (CMCs) via polymer infiltration and pyrolysis (PIP) process. It is evident that SbCl₃ plays a very important role in promoting chain crosslinking, transforming of the Si-Si into Si-C bonds and stabilizing PMS from very high oxidation trend of the active Si-H bonds. A-PMS keeps liquid at room temperature that is suitable for the infiltration in the absence of any solvent. A-PMS can be cured into a fully crosslinked structure at 320 °C that leads to a very high ceramic yield up to 91% and an Si/C ratio near 1.12 after pyrolysis. The resulted CMCs samples reached a density of 1.76 g cm⁻³ and a flexural strength of 381 MPa after only four infiltration-pyrolysis cycles.     

纳米SiC基光催化剂研究进展

Industrialization undoubtedly boosts economic development and improves the standard of living; however, it also leads to some serious problems, including the energy crisis, environmental pollution, and global warming. These problems are associated with or caused by the high carbon dioxide (CO₂) and sulfur dioxide (SO₂) emissions from the burning of fossil fuels such as coal, oil, and gas. Photocatalysis is considered one of the most promising technologies for eliminating these problems because of the possibility of converting CO₂ into hydrocarbon fuels and other valuable chemicals using solar energy, hydrogen (H₂) production from water (H₂O) electrolysis, and degradation of pollutants. Among the various photocatalysts, silicon carbide (SiC) has great potential in the fields of photocatalysis, photoelectrocatalysis, and electrocatalysis because of its good electrical properties and photoelectrochemistry. This review is divided into six sections: introduction, fundamentals of nanostructured SiC, synthesis methods for obtaining nanostructured SiC photocatalysts, strategies for improving the activity of nanostructured SiC photocatalysts, applications of nanostructured SiC photocatalysts, and conclusions and prospects. The fundamentals of nanostructured SiC include its physicochemical characteristics. It possesses a range of unique physical properties, such as extreme hardness, high mechanical stability at high temperatures, a low thermal expansion coefficient, wide bandgap, and superior thermal conductivity. It also possesses exceptional chemical characteristics, such as high oxidation and corrosion resistance. The synthesis methods for obtaining nanostructured SiC have been systematically summarized as follows: Template growth, sol-gel, organic precursor pyrolysis, solvothermal synthesis, arc discharge, carbon thermal reduction, and electrospinning. These synthesis methods require high temperatures, and the reaction mechanism involves SiC formation via the reaction between carbon and silicon oxide. In the section of the review involving the strategies for improving the activity of nanostructured SiC photocatalysts, seven strategies are discussed, viz., element doping, construction of Z-scheme (or S-scheme) systems, supported co-catalysts, visible photosensitization, construction of semiconductor heterojunctions, supported carbon materials, and construction of nanostructures. All of these strategies, except element doping and visible photosensitization, concentrate on enhancing the separation of holes and electrons, while suppressing their recombination, thus improving the photocatalytic performance of the nanostructured SiC photocatalysts. Regarding the element doping and visible photosensitization strategies, element doping can narrow the bandgap of SiC, which generates more holes and electrons to improve photocatalytic activity. On the other hand, the principle of visible photosensitization is that photo-induced electrons move from photosensitizers to the conduction band of SiC to participate in the reaction, thus enhancing the photocatalytic performance. In the section on the applications of nanostructured SiC, photocatalytic H₂ production, pollutant degradation, CO₂ reduction, photoelectrocatalytic, and electrocatalytic applications will be discussed. The mechanism of a photocatalytic reaction requires the SiC photocatalyst to produce photo-induced electrons and holes during irradiation, which participate in the photocatalytic reaction. For example, photo-induced electrons can transform protons into H₂, as well as CO₂ into methane, methanol, or formic acid. Furthermore, photo-induced holes can convert organic waste into H₂O and CO₂. For photoelectrocatalytic and electrocatalytic applications, SiC is used as a catalyst under high temperatures and highly acidic or basic environments because of its remarkable physicochemical characteristics, including low thermal expansion, superior thermal conductivity, and high oxidation and corrosion resistance. The last section of the review will reveal the major obstacles impeding the industrial application of nanostructured SiC photocatalysts, such as insufficient visible absorption, slow reaction kinetics, and hard fabrication, as well as provide some ideas on how to overcome these obstacles.      

Biomorphous SiC ceramics prepared from cork oak as precursor

Porous ceramic materials of SiC were synthesized from carbon matrices obtained via pyrolysis of natural cork as precursor. We propose a method for the fabrication of complex-shaped porous ceramic hardware consisting of separate parts prepared from natural cork. It is demonstrated that the thickness of the carbon-matrix walls can be increased through their impregnation with Bakelite phenolic glue solution followed by pyrolysis. This decreases the material’s porosity and can be used as a way to modify its mechanical and thermal characteristics. Both the carbon matrices (resulted from the pyrolysis step) and the resultant SiC ceramics are shown to be pseudomorphous to the structure of initial cork. Depending on the synthesis temperature, 3C-SiC, 6H-SiC, or a mixture of these polytypes, could be obtained. By varying the mass ratio of initial carbon and silicon components, stoichiometric SiC or SiC:С:Si, SiC:С, and SiC:Si ceramics could be produced. The structure, as well as chemical and phase composition of the prepared materials were studied by means of Raman spectroscopy and scanning electron microscopy.     

不同Al含量聚铝碳硅烷纤维空气不熔化及氧含量控制研究

利用低分子量聚碳硅烷(L-PCS)与乙酰丙酮铝间的热聚合反应,通过调节原料配比和反应条件,合成了不同Al含量,且具有良好可纺性的聚铝碳硅烷(PACS).研究了PACS的分子量分布和分子结构,PACS纤维空气不熔化特点并与PCS纤维进行比较.结果表明,[Al(Ac Ac)3]以-Al(Ac Ac)2悬挂和-Al(Ac Ac)-桥联两种方式接入L-PCS分子结构,PACS分子量呈双峰分布.PACS中Si—H含量和反应活性随Al含量增加而下降,氧化生成的Si—OH难以进一步形成Si—O—Si交联结构.这导致Al含量越高,凝胶点温度越高,凝胶含量随温度升高增加缓慢,同时引入多余氧.通过预氧化与高温处理相结合的方法,将不熔化纤维中氧含量控制在11 wt%以下.高温处理过程中发生自交联:Si—OH间脱水生成Si—O—Si;Si—H与Si—OH或Si—CH3脱氢生成Si—CH2—Si.     

LD泵浦的被动调QYb:YAG薄片激光器实验研究

采用中心波长为940nm的激光二极管泵浦,实现了Yb:YAG薄片的Cr4+:YAG被动调Q激光输出.Yb:YAG薄片掺杂Yb3+离子浓度为10%,厚度为500μm.理论上计算了Yb:YAG薄片在直接水冷方式与不同厚度SiC冷却方式下的温度分布.实验中采用厚度800μm的SiC冷却方式,获得了最高功率2.8 W的1 030nm连续激光输出,输出功率相比直接水冷方式提高了40%.通过Degnan理论优化了被动调Q晶体Cr4+:YAG的初始透过率和输出耦合镜,采用初始透过率为93%的Cr4+:YAG晶体和透过率为10%的输出耦合镜,在800μm SiC冷却方式下,获得了平均输出功率1.95 W、单脉冲能量1.2mJ、脉冲宽度74ns、重复频率1.6kHz的稳定调Q脉冲输出,斜效率为18.1%.光束质量因子M2x=1.622,M2y=1.616.     

化学沉积Ni-P-Al2O3和Ni-P-SiC复合材料的微观组织与物理性能

采用化学沉积方法,可以制备以镍磷合金为基质的复合硬质相粒子的复合材料［１］．镍磷合金颇受青睐之处在于可以调整成分和时效处理温度来改变其组织结构,进而获得广泛变化的性能［２,３］．本文报道化学沉积获得的ＮｉＰ氧化铝和ＮｉＰ碳化硅复合材料的微观组织与...     

Si-induced insertion of Li into SiC to form Li-rich SiC twin crystal

The energy density of Li-ion batteries is closely related to the capacity and average voltage of cathode materials. Unfortunately, current cathode materials either have low capacity or voltage, which limits the development of high-energy-density Li-ion batteries. This has given challenge to many attempts to develop new cathode materials with high capacity and voltage. In this study, we find that Li easily inserts into the (111) plane of SiC in the presence of Si, and a well-organized Li-rich SiC twin crystal is formed. Ultraviolet–visible diffuse reflectance spectra and electrochemical test results suggest that this Li-rich SiC twin crystal possesses the band gap energy of 3.5 eV and charging capacity of 1979 mAh/g at the current density of 200 mA/g, making it a promising candidate for the cathode material in high-capacity Li-ion batteries. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy results reveal that Si-induced Li insertion contributes to the changes in the surface species and structure of pristine SiC. These findings suggest that the Li-rich SiC twin crystal raises new possibilities for the development of high-capacity cathode materials and merits further investigation to expand its application scope.     

Ni/4H-SiC 肖特基势垒磁场下输运性质的分析

Ni/4H-SiC Schottky contacts with good characteristics were fabricated using electron beam evaporation to deposit Ni on 4H-SiC（（0001）Si face）. Current-voltage（I-V）characteristics of Ni / 4H-SiC Schottky barrier have been studied in the temperature range from 160 K to 300 K in magnetic fields（B）up to 10 T. The thermionic emission theory and relaxation time approximation Boltzmann eqation were employed to calculate the I - V characteristics,and it is found that the change of current shows a linear relation with B2 and V,and is inversely proportional to the temperature,which well agrees with experimental results.     

Tantalum ion acceleration in laser‐generated plasma and dependence on the pulse duration

The laser irradiation of tantalum targets is presented for different pulsed laser intensities ranging from 10¹⁰ up to about 10¹⁸ W/cm² and pulse durations from 9 ns up to 40 fs. The results show that the produced non‐equilibrium plasma accelerates Ta ions in the backward direction from values of the order of keV up to values of about 5 MeV. In thin foils, the forward plasma, developed behind the target along the direction of incoming laser, at intensities of about 10¹⁶ W/cm² and 300 ps pulse duration, accelerates Ta ions at energies of the order of 4.6 MeV and produces charge states up to about 40+. For fs lasers at intensities of the order of 10¹⁸ W/cm², only proton acceleration occurs up to 2.1 MeV while no Ta ions are accelerated, due to the reduced duration of the electric field and to the too high inertial mass of the Ta ions.     

Investigation of the effect of plasma waves excitation on target normal sheath ion acceleration using fs laser‐irradiating hydrogenated structures

Measurements of ion acceleration in polymethylmethacrylate foils covered by a thin copper film irradiated by fs laser in target normal sheath acceleration regime are presented. The ion acceleration depends on the laser parameters, such as the pulse energy; depends on the irradiation conditions, such as the focal point position of the laser with respect to the target surface; and depends on the target properties, such as the metallic film thickness. The proton acceleration increases in the presence of the metallic film enhancing the plasma electron density, reaching about 1.6 MeV energy for a focal position on the target surface. The plasma diagnostics uses SiC detectors, absorber foils, Faraday cups, and gafchromic films. Employing p‐polarized laser light and a suitable oblique incidence, it is possible to increase the proton acceleration up to about 2.0 MeV thanks to the effects of laser absorption resonance due to plasma waves excitation.