石墨烯过渡层对金属/SiC接触肖特基势垒调控的第一性原理研究

由于SiC禁带宽度大,在金属/SiC接触界面难以形成较低的势垒,制备良好的欧姆接触是目前SiC器件研制中的关键技术难题,因此,研究如何降低金属/SiC接触界面的肖特基势垒高度(SBH)非常重要.本文基于密度泛函理论的第一性原理赝势平面波方法,结合平均静电势和局域态密度计算方法,研究了石墨烯作为过渡层对不同金属(Ag,Ti,Cu,Pd,Ni,Pt)/SiC接触的SBH的影响.计算结果表明,单层石墨烯可使金属/SiC接触的SBH降低;当石墨烯为2层时,SBH进一步降低且Ni,Ti接触体系的SBH呈现负值,说明接触界面形成了良好的欧姆接触;当石墨烯层数继续增加,SBH不再有明显变化.通过分析接触界面的差分电荷密度以及局域态密度,SBH降低的机理可能主要是石墨烯C原子饱和了SiC表面的悬挂键并降低了金属诱生能隙态对界面的影响,并且接触界面的石墨烯及其与金属相互作用形成的混合相具有较低的功函数.此外,SiC/石墨烯界面形成的电偶极层也可能有助于势垒降低.     

SiC纳米晶须的光致发光研究

纳米碳化硅晶须作为一维半导体,其光学性质一直受到关注。研究结果显示,在Ar^ 激光（514．5nm)激发下,纳米碳化硅晶须室温下发出极其强烈的红光,这种发光导致喇曼光散射消失,瑞利弹性散射极度减弱,由于低维半导体的体表面大,对称平移受到一定程度的破坏,应该产生大量的缺陷,其发光也应该是表面发光或缺陷发光,但分析表明这可能是低维半导体碳化硅室温下首次发现的极其稳定的强束缚激子或表面发光现象。对其发光机制给予讨论。并且探讨了合适条件下出现喇曼受激辐射,初步认为喇曼散射截面的增大会促进喇曼受激辐射的产生。     

冶金炉料中二氧化硅和碳化硅的联合测定

提出冶金炉料中二氧化硅及碳化硅的联合测定方法，硝酸－氢氟酸－盐酸溶解二氧化硅，用硅氟酸钾容量法测定，残渣经焦硫酸钾溶解杂质，不溶碳化硅以重量法测定，经试样全分析及精密度考证，方法简便、可靠．     

SiC衬底上近自由态石墨烯制备及表征的研究进展

石墨烯材料自问世以来,一直处于学界研究的焦点,在微电子器件领域,通过SiC衬底制备的近自由态石墨烯具有较大的应用潜力.本文介绍了SiC热解法制备石墨烯的优势与劣势,说明了近自由态石墨烯制备的原因.综合阐述了目前制备近自由态石墨烯的常用方法,并对比了各种制备方法的特点.最后,概述了近自由态石墨烯的常用表征手段.     

PVT法生长SiC过程生长界面形状对热应力的影响

PVT法生长SiC过程中晶体内部的热应力是其位错产生的主要原因,而生长界面的形状对晶体热应力及缺陷的产生都有一定影响.本文对不同生长界面晶体的温场及应力场进行了数值分析,结果显示相对于凸出及平整界面的晶体,微凹界面晶体的轴向温差最小,同时产生缺陷的切应力Τrz及引起开裂的径向正应力σrr值都为最小.     

碳化硅单晶材料的溶剂热合成与表征

SiC single crystals have been prepared by the method of solvothermal synthesis with a system of SiCl4, CCl4 and metal K in an auto clave. X-ray diffraction (XRD), Raman spectra and transmission electron microscopy(TEM) were used to characterize the products. XRD reveals that the products are SiC crystals and TEM exhibits that SiC single crystal sofwires and platelets are obtained under different usages of metal K. The SiC wires have diameters of 10～20 nm and length up to 1.5μm; the platelets have lateral dimensions of 0.1～3 μm, exhibiting regular polygonal shapes and step-bunched side surface. Furthermore, the growth mechanism of the SiC single crystals is discussed and the effect of super saturation on the crystal growth and morphology is also investigated.     

SiC/Pt/CdS纳米棒Z型异质结的制备及其高效光催化产氢性能

In this study, a novel silicon carbide/platinum/cadmium sulfide (SiC/Pt/CdS) Z-scheme heterojunction nanorod is constructed using a simple chemical reduction-assisted hydrothermal method, in which Pt nanoparticles are anchored at the interface of SiC nanorods and CdS nanoparticles to induce an electron-hole pair transfer along the Z-scheme transport path. Multiple characterization techniques are used to analyze the structure, morphology, and properties of these materials. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) results show that the SiC/Pt/CdS materials with good crystal structure are successfully synthesized. Transmission electron microscopy reveals that Pt nanoparticles grow between the interfaces of SiC nanorods and CdS nanoparticles. UV-Vis diffuse reflectance spectroscopy shows that the as-prepared Z-scheme heterojunction samples have a wider light absorption range in comparison with pristine CdS materials. Photoluminescence spectroscopy and the transient photocurrent response further demonstrate that the SiC/Pt/CdS nanorod sample with an optimal molar ratio possesses the highest electron-hole pair separation efficiency. The loading amount of CdS on the surface of SiC/Pt nanorods is effectively adjusted by controlling the molar ratio of SiC and CdS to achieve the optimal performance of the SiC/Pt/CdS nanorod photocatalysts. The optimal H₂ evolution capacity is achieved at SiC : CdS = 5 : 1 (molar ratio) and the maximum H₂ evolution rate reaches a high value of 122.3 µmol·h⁻¹. In addition, scanning electron microscopy, XRD, and XPS analyses show that the morphology and crystal structure of the SiC/Pt/CdS photocatalyst remain unchanged after three cycles of activity testing, indicating that the SiC/Pt/CdS nanocomposite has a stable structure for H₂ evolution under visible light. To prove the Z-scheme transfer mechanism of electron-hole pairs, selective photo-deposition technology is used to simultaneously carry out the photo-reduction deposition of Au nanoparticles and photo-oxidation deposition of Mn₃O₄ nanoparticles in the photoreaction. The experimental results indicate that during photocatalysis, the electrons in the conduction band of CdS participate mainly in the reduction reaction, and the holes in the valence band of SiC are more likely to undergo the oxidation reaction. The electrons in the conduction band of SiC combine with the holes in the valence band of CdS to form a Z-scheme transport path. Therefore, a possible Z-scheme charge migration path in SiC/Pt/CdS nanorods during photocatalytic H₂ production is proposed to explain the enhancement in the activity. This study provides a new strategy for synthesizing a Z-scheme photocatalytic system based on SiC nanorods. Based on the characterization results, it is determined that SiC/Pt/CdS nanocomposites are highly efficient, inexpensive, easy to prepare, and are stable structures for H₂ evolution under visible light with outstanding commercial application prospects.     

SiC材料及器件研制的进展

作为第三代的半导体材料－ＳｉＣ具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点,在高频、大功率、耐高温、抗辐照的半民体器件及紫外探测器和短波发光二级管等方面具有广泛的应用前景,文章综述了半导体ＳｉＣ材料生长及其器件研制的概况。     

碳化硅扫描反射镜支撑结构设计

对尺寸为460 mm×290 mm的SiC扫描反射镜的轻量化和支撑结构的设计进行了研究。基于三角形和矩形的复合轻量化结构,采用镜体背部为开放和封闭相结合的形式,设计了一种新型的扫描反射镜组件。该组件采用侧面支撑方式和轴向柔性结构,有利于消除支撑结构材料热膨胀系数不匹配产生的热应力对镜面面形的影响。有限元方法分析结果表明：反射镜组件在1 g重力载荷和8℃温度变化作用下,反射镜镜面的面形误差RMS值分别为4.5 nm和20.3 nm。该反射镜轻量化形式和支撑结构满足光学成像要求,并可有效提高结构的稳定性,对于大尺寸反射镜组件的设计具有借鉴意义。     

碳化硅颗粒增强铝合金复合材料在不同条件下的磨损行为

动载磨损是工程应用的一种常见现象，然而已有的试验研究大都是以平稳加方式进行的，这样得到的磨损规律显然与实际工况下的不符。因此，利用滑动磨损和喷砂冲员两种不同的试验方法，对ＳｉＣ颗粒增强２０２４Ａｌ复合材料的磨损行为进行了试验研究。