Comparative optical investigations of sintered and monocrystalline black and green silicon carbide (SiC)

Crystalline SiC appears in many different polytypes of cubic, hexagonal, and rhombohedral structures. These polytypes are colorless transparent or exhibit various colors evoked by doping with different elements. Dense sintered S-SiC (solid-state sintered) and LPS-SiC (liquid-phase sintered) were known in black color only, but recently a new liquid-phase sintering process was developed to achieve green LPS-SiC as well. Whereas in S-SiC the polycrystalline grains are homogeneously doped with 0.2 wt% boron, in the LPS-types the SiC grains contain up to 1.2 wt% Al, 0.3 wt% N and 0.1% O having a structure comprising a SiC(Al,N,O) mixed crystal shell and a pure SiC core. The difference in color of polycrystalline SiC bodies seems to result from small amounts of carbon in the sintered specimens (0.2-0.5 wt% C). Green sintered LPS-SiC is obtained, after free carbon has largely been removed by a suitable oxidation process prior to sintering. To get information on the various types of sintered SiC, the optical extinction and absorption spectra of black and green sintered SiC and green Acheson-SiC single crystals were quantitatively measured in the spectral range between about 1.4 and 4.1 eV. While the absorption coefficients of the single crystals vary between about 50 and 200 cm⁻¹, the extinction coefficients of the sintered materials are between 2000 and 7000 cm⁻¹. Nevertheless the absorption bands in the more or less transparent region of the green and black materials can easily be attributed to one another. Hence, the reason for these absorption processes must be assumed to be the same. In the same way, position and slope of the absorption edges are correlated amongst green or black SiC, irrespective of, whether the material is single crystal or sintered.     

Mechanical properties and wear and corrosion resistance of electrodeposited Ni-Co/SiC nanocomposite coating

Ni-Co/SiC nanocomposite coatings with various contents of SiC nano-particulates were prepared by electrodeposition in a Ni-Co plating bath containing SiC nano-particulates to be co-deposited. The influences of the nanoparticulates concentration, current density, stirring rate and temperature of the plating bath on the composition of the coatings were investigated. The shape and size of the SiC nano-particulates were observed and determined using a transmission electron microscope. The polarization behavior of the composite plating bath was examined on a PAR-273A potentiostat/galvanostat device. The wear behavior of the Ni-Co/SiC nanocomposite coatings was evaluated on a ball-on-disk UMT-2MT test rig. The worn surface morphologies of the Ni-Co/SiC nanocomposite coatings were observed using a scanning electron microscope. The corrosion behavior of the nanocomposite coatings was evaluated by charting the Tafel curves of the solution of 0.5 mol L⁻¹ NaCl at room temperature. It was found that the cathodic polarization potential of the composite electrolyte increased with increasing SiC concentration in the plating bath. The microhardness and wear and corrosion resistance of the nanocomposite coatings also increased with increasing content of the nano-SiC in the plating bath, and the morphologies of the nanocomposite coatings varied with varying SiC concentration in the plating bath as well. Moreover, the co-deposited SiC nano-particulates were uniformly distributed in the Ni-Co matrix and contributed to greatly increase the microhardness and wear resistance of the Ni-Co alloy coating.     

无紫外光照射下n型15R-SiC及6H-SiC晶体的电化学腐蚀

本文在无紫外光照射下通过电化学腐蚀法制备了多孔n型15R-及6H-SiC,并用扫描电子显微镜(SEM),拉曼散射及X射线衍射仪(XRD)对多孔层的结构进行了分析。结果表明:晶体的晶型及氧化条件等因素对多孔结构有较大影响。首次观察到多孔n型15-SiC的半圆管状结构,其孔隙率约是66%。     

掺杂N的浓度对SiC薄膜的光敏特性影响

在热丝化学汽相沉积（HFCVD）法制备SiC薄膜过程中，研究不同的N掺杂下制备样品的光敏特性．对薄膜在室温和较高温度（410℃）下进行光敏特性测试，结果表明，薄膜的制备工艺参量对其光敏特性有较大影响；较高温度下其敏感特性和室温下测试的结果大体一致；在合适条件下制备的薄膜对不同波长的光有较好的敏感特性．可以看出，SiC薄膜在研究高温光敏器件领域具有很好的应用前景．     

掺杂N的浓度对SiC薄膜的光敏特性影响(英文)

在热丝化学汽相沉积(HFCVD)法制备SiC薄膜过程中,研究不同的N掺杂下制备样品的光敏特性.对薄膜在室温和较高温度(410℃)下进行光敏特性测试,结果表明,薄膜的制备工艺参量对其光敏特性有较大影响;较高温度下其敏感特性和室温下测试的结果大体一致;在合适条件下制备的薄膜对不同波长的光有较好的敏感特性.可以看出,SiC薄膜在研究高温光敏器件领域具有很好的应用前景.     

碳化硅合成反应动力学研究

基于经典轨迹法研究了碳化硅合成反应C(3Pg) SiO(X1∑ ,V=0,1;J=0)→SiC(X1∑ ) O(3Pg)的动力学.该反应存在阈能,反应截面均存在一个极大值和最佳反应能量.当SiO(X1∑ )分别处于V=0、J=0和V=1、J=0状态时,反应阈能分别约为1.2552×103kJ.mol-1和1.1297×103kJ.mol-1,反应截面极大值分别为5.3742×10-3nm2和5.1824×10-3nm2,而最佳初始碰撞能Et(the Optimal InitialCollision Translation Energy)分别为3.3472×103kJ.mol-1和3.7656×103kJ.mol-1.在SiC的最佳产率区(即最佳反应能区),通过反应物的振动激发并不能使SiC产率明显提高,因此基态下SiC合成反应的最佳能区即为该反应的最佳产率区.     

Growth of nanowires from annealing SiBONC nanopowders

Silicon carbide (SiC) nanowires were prepared by the gas pressure annealing of SiBONC powders, which were synthesized by pyrolysis of a polymeric precursor. The yield, morphology and composition of the nanowires were influenced by the Si/B ratio in the original ceramic powders, annealing temperature and atmosphere. Annealing temperatures between 1500 and 1600 °C and Si/B molar ratios between 70:30 to 60:40 were suitable for growth of the nanowires. When annealing in an argon (Ar) atmosphere, the SiC nanowires contained little oxygen (O); and the diameters ranged from 20 to 200 nm. Then annealing in a nitrogen (N₂) atmosphere, the nanowires were thicker and rougher, and consisted of a relatively high level of nitrogen. Varied shapes and morphologies of the nanowires were observed for different synthesis conditions. The present novel method makes possible the large-scale fabrication of β-SiC nanowires.     

SiC/Pt/CdS纳米棒Z型异质结的制备及其高效光催化产氢性能

In this study, a novel silicon carbide/platinum/cadmium sulfide (SiC/Pt/CdS) Z-scheme heterojunction nanorod is constructed using a simple chemical reduction-assisted hydrothermal method, in which Pt nanoparticles are anchored at the interface of SiC nanorods and CdS nanoparticles to induce an electron-hole pair transfer along the Z-scheme transport path. Multiple characterization techniques are used to analyze the structure, morphology, and properties of these materials. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) results show that the SiC/Pt/CdS materials with good crystal structure are successfully synthesized. Transmission electron microscopy reveals that Pt nanoparticles grow between the interfaces of SiC nanorods and CdS nanoparticles. UV-Vis diffuse reflectance spectroscopy shows that the as-prepared Z-scheme heterojunction samples have a wider light absorption range in comparison with pristine CdS materials. Photoluminescence spectroscopy and the transient photocurrent response further demonstrate that the SiC/Pt/CdS nanorod sample with an optimal molar ratio possesses the highest electron-hole pair separation efficiency. The loading amount of CdS on the surface of SiC/Pt nanorods is effectively adjusted by controlling the molar ratio of SiC and CdS to achieve the optimal performance of the SiC/Pt/CdS nanorod photocatalysts. The optimal H₂ evolution capacity is achieved at SiC : CdS = 5 : 1 (molar ratio) and the maximum H₂ evolution rate reaches a high value of 122.3 µmol·h⁻¹. In addition, scanning electron microscopy, XRD, and XPS analyses show that the morphology and crystal structure of the SiC/Pt/CdS photocatalyst remain unchanged after three cycles of activity testing, indicating that the SiC/Pt/CdS nanocomposite has a stable structure for H₂ evolution under visible light. To prove the Z-scheme transfer mechanism of electron-hole pairs, selective photo-deposition technology is used to simultaneously carry out the photo-reduction deposition of Au nanoparticles and photo-oxidation deposition of Mn₃O₄ nanoparticles in the photoreaction. The experimental results indicate that during photocatalysis, the electrons in the conduction band of CdS participate mainly in the reduction reaction, and the holes in the valence band of SiC are more likely to undergo the oxidation reaction. The electrons in the conduction band of SiC combine with the holes in the valence band of CdS to form a Z-scheme transport path. Therefore, a possible Z-scheme charge migration path in SiC/Pt/CdS nanorods during photocatalytic H₂ production is proposed to explain the enhancement in the activity. This study provides a new strategy for synthesizing a Z-scheme photocatalytic system based on SiC nanorods. Based on the characterization results, it is determined that SiC/Pt/CdS nanocomposites are highly efficient, inexpensive, easy to prepare, and are stable structures for H₂ evolution under visible light with outstanding commercial application prospects.     

Raman investigation of defective SiC nanocrystals

Phonon confinement effect and surface optical mode in SiC nanocrystal have been investigated through Raman spectroscopy. Considering high density of stacking faults in SiC grains, the correlation length of RWL (proposed by Richter, Wang, Li to explain phonon confinement in nano silicon) model is determined as a distance between nearby stacking faults. Thus, homogeneous region becomes thin slices in cylindrical SiC grains, which redefines weighting function. Effect of anisotropy of phonon dispersion curve is also analyzed during calculation. The additional 875‐cm⁻¹ band is attributed to defects and amorphous SiC, which is confirmed by transmission electron microscopy. SiC grains are approximated as column array with grain boundary substances regarded as surrounding medium, which explains surface optical phonon mode at 915 cm⁻¹. Copyright © 2015 John Wiley & Sons, Ltd.     

辐照和碳化对SiC空心微球的影响

以聚碳硅烷(PCS)为原料,通过炉内成球技术制备SiC空心陶瓷微球,讨论辐照交联和高温碳化对SiC陶瓷微球化学成分、成键结构和表面特性的影响。结果表明,PCS在热处理过程中的失重率约为35%,其分解温度在400~800℃之间。微球经电子束辐照后会生成以Si—C—Si和Si一O一Si骨架结构为主的三维网络交联结构。碳化过程使Si—C_32键,Si—H键和C—H键断裂,生成以Si—C为主的无定形态Si(C。辐照的均化作用使高温热处理碳化的微球能够维持完好的球壳结构,且具有更好的表面粗糙度和平整性。