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541.
Crystalline SiC appears in many different polytypes of cubic, hexagonal, and rhombohedral structures. These polytypes are colorless transparent or exhibit various colors evoked by doping with different elements. Dense sintered S-SiC (solid-state sintered) and LPS-SiC (liquid-phase sintered) were known in black color only, but recently a new liquid-phase sintering process was developed to achieve green LPS-SiC as well. Whereas in S-SiC the polycrystalline grains are homogeneously doped with 0.2 wt% boron, in the LPS-types the SiC grains contain up to 1.2 wt% Al, 0.3 wt% N and 0.1% O having a structure comprising a SiC(Al,N,O) mixed crystal shell and a pure SiC core. The difference in color of polycrystalline SiC bodies seems to result from small amounts of carbon in the sintered specimens (0.2-0.5 wt% C). Green sintered LPS-SiC is obtained, after free carbon has largely been removed by a suitable oxidation process prior to sintering. To get information on the various types of sintered SiC, the optical extinction and absorption spectra of black and green sintered SiC and green Acheson-SiC single crystals were quantitatively measured in the spectral range between about 1.4 and 4.1 eV. While the absorption coefficients of the single crystals vary between about 50 and 200 cm−1, the extinction coefficients of the sintered materials are between 2000 and 7000 cm−1. Nevertheless the absorption bands in the more or less transparent region of the green and black materials can easily be attributed to one another. Hence, the reason for these absorption processes must be assumed to be the same. In the same way, position and slope of the absorption edges are correlated amongst green or black SiC, irrespective of, whether the material is single crystal or sintered. 相似文献
542.
Ni-Co/SiC nanocomposite coatings with various contents of SiC nano-particulates were prepared by electrodeposition in a Ni-Co plating bath containing SiC nano-particulates to be co-deposited. The influences of the nanoparticulates concentration, current density, stirring rate and temperature of the plating bath on the composition of the coatings were investigated. The shape and size of the SiC nano-particulates were observed and determined using a transmission electron microscope. The polarization behavior of the composite plating bath was examined on a PAR-273A potentiostat/galvanostat device. The wear behavior of the Ni-Co/SiC nanocomposite coatings was evaluated on a ball-on-disk UMT-2MT test rig. The worn surface morphologies of the Ni-Co/SiC nanocomposite coatings were observed using a scanning electron microscope. The corrosion behavior of the nanocomposite coatings was evaluated by charting the Tafel curves of the solution of 0.5 mol L−1 NaCl at room temperature. It was found that the cathodic polarization potential of the composite electrolyte increased with increasing SiC concentration in the plating bath. The microhardness and wear and corrosion resistance of the nanocomposite coatings also increased with increasing content of the nano-SiC in the plating bath, and the morphologies of the nanocomposite coatings varied with varying SiC concentration in the plating bath as well. Moreover, the co-deposited SiC nano-particulates were uniformly distributed in the Ni-Co matrix and contributed to greatly increase the microhardness and wear resistance of the Ni-Co alloy coating. 相似文献
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546.
陈泽琴 《原子与分子物理学报》2007,24(6):1229-1232
基于经典轨迹法研究了碳化硅合成反应C(3Pg) SiO(X1∑ ,V=0,1;J=0)→SiC(X1∑ ) O(3Pg)的动力学.该反应存在阈能,反应截面均存在一个极大值和最佳反应能量.当SiO(X1∑ )分别处于V=0、J=0和V=1、J=0状态时,反应阈能分别约为1.2552×103kJ.mol-1和1.1297×103kJ.mol-1,反应截面极大值分别为5.3742×10-3nm2和5.1824×10-3nm2,而最佳初始碰撞能Et(the Optimal InitialCollision Translation Energy)分别为3.3472×103kJ.mol-1和3.7656×103kJ.mol-1.在SiC的最佳产率区(即最佳反应能区),通过反应物的振动激发并不能使SiC产率明显提高,因此基态下SiC合成反应的最佳能区即为该反应的最佳产率区. 相似文献
547.
Silicon carbide (SiC) nanowires were prepared by the gas pressure annealing of SiBONC powders, which were synthesized by pyrolysis of a polymeric precursor. The yield, morphology and composition of the nanowires were influenced by the Si/B ratio in the original ceramic powders, annealing temperature and atmosphere. Annealing temperatures between 1500 and 1600 °C and Si/B molar ratios between 70:30 to 60:40 were suitable for growth of the nanowires. When annealing in an argon (Ar) atmosphere, the SiC nanowires contained little oxygen (O); and the diameters ranged from 20 to 200 nm. Then annealing in a nitrogen (N2) atmosphere, the nanowires were thicker and rougher, and consisted of a relatively high level of nitrogen. Varied shapes and morphologies of the nanowires were observed for different synthesis conditions. The present novel method makes possible the large-scale fabrication of β-SiC nanowires. 相似文献
548.
In this study, a novel silicon carbide/platinum/cadmium sulfide (SiC/Pt/CdS) Z-scheme heterojunction nanorod is constructed using a simple chemical reduction-assisted hydrothermal method, in which Pt nanoparticles are anchored at the interface of SiC nanorods and CdS nanoparticles to induce an electron-hole pair transfer along the Z-scheme transport path. Multiple characterization techniques are used to analyze the structure, morphology, and properties of these materials. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) results show that the SiC/Pt/CdS materials with good crystal structure are successfully synthesized. Transmission electron microscopy reveals that Pt nanoparticles grow between the interfaces of SiC nanorods and CdS nanoparticles. UV-Vis diffuse reflectance spectroscopy shows that the as-prepared Z-scheme heterojunction samples have a wider light absorption range in comparison with pristine CdS materials. Photoluminescence spectroscopy and the transient photocurrent response further demonstrate that the SiC/Pt/CdS nanorod sample with an optimal molar ratio possesses the highest electron-hole pair separation efficiency. The loading amount of CdS on the surface of SiC/Pt nanorods is effectively adjusted by controlling the molar ratio of SiC and CdS to achieve the optimal performance of the SiC/Pt/CdS nanorod photocatalysts. The optimal H2 evolution capacity is achieved at SiC : CdS = 5 : 1 (molar ratio) and the maximum H2 evolution rate reaches a high value of 122.3 µmol·h−1. In addition, scanning electron microscopy, XRD, and XPS analyses show that the morphology and crystal structure of the SiC/Pt/CdS photocatalyst remain unchanged after three cycles of activity testing, indicating that the SiC/Pt/CdS nanocomposite has a stable structure for H2 evolution under visible light. To prove the Z-scheme transfer mechanism of electron-hole pairs, selective photo-deposition technology is used to simultaneously carry out the photo-reduction deposition of Au nanoparticles and photo-oxidation deposition of Mn3O4 nanoparticles in the photoreaction. The experimental results indicate that during photocatalysis, the electrons in the conduction band of CdS participate mainly in the reduction reaction, and the holes in the valence band of SiC are more likely to undergo the oxidation reaction. The electrons in the conduction band of SiC combine with the holes in the valence band of CdS to form a Z-scheme transport path. Therefore, a possible Z-scheme charge migration path in SiC/Pt/CdS nanorods during photocatalytic H2 production is proposed to explain the enhancement in the activity. This study provides a new strategy for synthesizing a Z-scheme photocatalytic system based on SiC nanorods. Based on the characterization results, it is determined that SiC/Pt/CdS nanocomposites are highly efficient, inexpensive, easy to prepare, and are stable structures for H2 evolution under visible light with outstanding commercial application prospects. 相似文献
549.
Zhiyuan Xiao Yanqing Yang Sheng Ouyang Zongde Kou Bin Huang Xian Luo 《Journal of Raman spectroscopy : JRS》2015,46(12):1225-1229
Phonon confinement effect and surface optical mode in SiC nanocrystal have been investigated through Raman spectroscopy. Considering high density of stacking faults in SiC grains, the correlation length of RWL (proposed by Richter, Wang, Li to explain phonon confinement in nano silicon) model is determined as a distance between nearby stacking faults. Thus, homogeneous region becomes thin slices in cylindrical SiC grains, which redefines weighting function. Effect of anisotropy of phonon dispersion curve is also analyzed during calculation. The additional 875‐cm−1 band is attributed to defects and amorphous SiC, which is confirmed by transmission electron microscopy. SiC grains are approximated as column array with grain boundary substances regarded as surrounding medium, which explains surface optical phonon mode at 915 cm−1. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
550.
以聚碳硅烷(PCS)为原料,通过炉内成球技术制备SiC空心陶瓷微球,讨论辐照交联和高温碳化对SiC陶瓷微球化学成分、成键结构和表面特性的影响。结果表明,PCS在热处理过程中的失重率约为35%,其分解温度在400~800℃之间。微球经电子束辐照后会生成以Si—C—Si和Si一O一Si骨架结构为主的三维网络交联结构。碳化过程使Si—C_32键,Si—H键和C—H键断裂,生成以Si—C为主的无定形态Si(C。辐照的均化作用使高温热处理碳化的微球能够维持完好的球壳结构,且具有更好的表面粗糙度和平整性。 相似文献