Effect of SiC buffer layer on flux pinning property of MgB2 tapes

In this paper we aimed at investigating the flux pinning property of MgB₂ films on hastelloy tapes which are buffered on various thicknesses of SiC layers. We have observed that the increase in thickness of the SiC buffer layer is very closely related with the systematic improvement of the field dependence of the critical current densities (J_c) of MgB₂ tapes while the values of J_c decreased. According to the analysis of the pinning force density (F_p), there exist two pinning sources both in the pure MgB₂ and in the MgB₂ film with the thinnest SiC buffer layer. On the while, the pinning source observed in the MgB₂ films with thicker SiC buffer layers appears to be different from those previously mentioned. The different pinning behaviors of MgB₂ films may suggest that there be an additional pinning center working on the MgB₂ films with thick SiC buffer layers. The microstructural analyses of MgB₂ films confirmed that intra-granular defects and columnar grain boundaries may be a dominant pinning mechanism in the pure MgB₂ and the MgB₂ film with 170 nm-thick SiC buffer layer. For the MgB₂ films with thicker SiC buffer layers, carbon diffusion into the MgB₂ film, which is defined by the Auger electron spectroscopy, may be the origin of the additional pinning mechanism.     

SiC/(W,Ti)C梯度陶瓷喷嘴材料的制备及其冲蚀磨损机理研究

针对陶瓷喷嘴磨损特点,在喷嘴材料的设计和制造中提出运用梯度功能材料理论,通过控制陶瓷喷嘴材料的成分分布以实现其力学性能的合理梯度变化,将梯度陶瓷喷嘴材料制备过程中所产生的残余压应力引入喷嘴入口以提高喷嘴入口的力学性能,从而缓解喷嘴入口的高应力,提高其抗冲蚀磨损能力.采用热压烧结工艺制备SiC/(W,Ti)C梯度陶瓷喷嘴材料并分析其冲蚀磨损机理.结果表明,在相同冲蚀磨损条件下,梯度陶瓷喷嘴材料的抗冲蚀磨损性能较非梯度陶瓷喷嘴材料显著提高,这是由于梯度陶瓷喷嘴应力状态的改善及其力学性能提高的缘故.梯度陶瓷喷嘴材料的磨损机制为入口处呈现疲劳断裂、中间呈现微切削、出口处呈现疲劳断裂和脆性断裂特征.     

SiCp／Cu复合材料摩擦磨损行为研究

采用粉末冶金结合热挤压工艺制备了组织均匀、致密的SiCp／cu复合材料，在MM-200型摩擦磨损试验机上考察了复合材料在干摩擦条件下同GCr15钢对摩时的摩擦磨损性能；采用扫描电子显微镜观察分析了复合材料磨损表面和截面形貌；采用X射线能量色散谱仪分析了复合材料磨损表面元素组成．结果表明，SiC颗粒作为增强相可以起到承载作用、减轻基体同偶件之间的粘着作用以及使基体产生塑性变形，从而显著改善复合材料的耐磨性能．但由于硬质SiC颗粒的犁削作用以及复合材料磨损表面高硬度机械混合层的形成，同Cu基体相比，复合材料的摩擦系数有所增大．SiCp／Cu复合材料主要呈现磨粒磨损和源于亚表层裂纹扩展的剥层磨损特征，其磨损表面形成的富Fe机械混合层对改善复合材料的耐磨性能具有重要影响．     

Dielectric properties of nano Si/C/N composite powder and nano SiC powder at high frequencies

The dielectric properties of nano Si/C/N composite powder and nano SiC powder at high frequencies have been studied. The nano Si/C/N composite powder and nano SiC powder were synthesized from hexamethyldisilazane ((Me₃Si)₂NH) (Me:CH₃) and SiH₄–C₂H₂, respectively, by a laser-induced gas-phase reaction. The complex permittivities of the nano Si/C/N composite powder and nano SiC powder were measured at a frequency range of 8.2–12.4 GHz. The real part (′) and imaginary part (″) of the complex permittivity, and dissipation factor (tg δ=″/′) of nano Si/C/N composite powder are much higher than those of nano SiC powder and bulk SiC, Si₃N₄, SiO₂, and Si, especially the tg δ. The promising features of nano Si/C/N composite powder would be due to more complicated Si, C, and N atomic chemical environment than in a mixture of pure SiC and Si₃N₄ phase. The charged defects and quasi-free electrons moved in response to the electric field, diffusion or polarization current resulted from the field propagation. Because there exists graphite in the nano Si/C/N composite powder, some charge carries are related to the sp³ dangling bonds (of silicon and carbon) and unsaturated sp² carbons. The high ″ and tg δ of nano Si/C/N composite powder were due to the dielectric relaxation. The nano Si/C/N composite powder would be a good candidate for electromagnetic interface shielding material.     

Band-gap modulation of graphane-like SiC nanoribbons under uniaxial elastic strain

The band-gap modulation of zigzag and armchair graphane-like SiC nanoribbons (GSiCNs) under uniaxial elastic strain is investigated using the density functional theory. The results show that band gap of both structures all decreases when being compressed or tensed. In compression, both zigzag and armchair GSiCNs are semiconductors with a direct band gap. However, in tension, the armchair GSiCNs undergo a direct-to-indirect band-gap transition but the zigzag GSiCNs still have a direct band gap. These results are also proved by HSE06 method. This implies a potential application of the graphane-like SiC nanoribbons in the future pressure sensor and optical electronics nanodevices.     

New Band Systems of SiC Molecule in Visible Region

ABSTRACT

Laser-produced spectra of SiC molecule in region 370–590 nm were reinvestigated using laser ablation technique. Out of 117 bands of SiC molecule observed in this region, 108 bands were new, while the other nine bands of SiC molecule were reported previously. All these 117 bands of SiC molecule were assigned to three new transitions C₁-X, C₂-X, and C₁-A and to one previously reported C³Π-X³Π transition. The molecular constants of C₁, C₂, C³Π, A³Σ^?, and X³Π states were calculated and reported.     

Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions

The interfacial properties of MoS₂/4H-SiC heterostructures were studied by combining first-principles calculations and X-ray photoelectron spectroscopy. Experimental (theoretical) valence band offsets (VBOs) increase from 1.49 (1.46) to 2.19 (2.36) eV with increasing MoS₂ monolayer (1L) up to 4 layers (4L). A strong interlayer interaction was revealed at 1L MoS₂/SiC interface. Fermi level pinning and totally surface passivation were realized for 4H-SiC (0001) surface. About 0.96e per unit cell transferring forms an electric field from SiC to MoS₂. Then, 1L MoS₂/SiC interface exhibits type I band alignment with the asymmetric conduction band offset (CBO) and VBO. For 2L and 4L MoS₂/SiC, Fermi level was just pinning at the lower MoS₂ 1L. The interaction keeps weak vdW interaction between upper and lower MoS₂ layers. They exhibit the type II band alignments and the enlarged CBOs and VBOs, which is attributed to weak vdW interaction and strong interlayer orbital coupling in the multilayer MoS₂. High efficiency of charge separation will emerge due to the asymmetric band alignment and built-in electric field for all the MoS₂/SiC interfaces. The multiple interfacial interactions provide a new modulated perspective for the next-generation electronics and optoelectronics based on the 2D/3D semiconductors heterojunctions.     

合成温度对Ce掺杂SiC纳米线的制备及场发射性能的影响研究

本文利用化学气相反应(CVR)法, 系统研究了不同温度对Ce掺杂的SiC纳米线及其场发射性能的影响规律. 利用扫描电镜(SEM)、透射电镜(TEM)、选区电子衍射(SAED)、X射线衍射(XRD)对所得产物进行了表征, 并对其场发射性能进行了测试. 结果表明: 所得产物为具有立方结构的β-SiC晶体, 随着温度的升高, 纳米线逐渐变的弯曲, Ce的含量降低, 产物的开启电场和阈值电场先升高后降低. 当合成温度为1250 ℃, Ce的含量为0.27 at%, 产物的场发射性能最佳,开启电场和阈值电场分别为2.5 V/μm和5.2 V/μm. 关键词： 合成温度 SiC纳米线 场发射性能     

Investigation of the structural and electrical properties of air-annealed ruthenium thin films on 6H–SiC at different temperatures

Ruthenium (Ru) Schottky contacts and thin films on n-type 6H–SiC were fabricated and characterised by physical and electrical methods. The characterisation was done after annealing the samples in air at various temperatures. Rutherford backscattering spectroscopy (RBS) analysis of the thin films indicated the oxidation of Ru after annealing at a temperature of 400 °C, and interdiffusion of Ru and Si at the Ru–6H–SiC interface at 500 °C. XRD analysis of the thin films indicated the formation of RuO₂ and RuSi in Ru–6H–SiC after annealing at a temperature of 600 °C. The formation of the oxide was also corroborated by Raman spectroscopy. The ideality factor of the Schottky barrier diodes (SBD) was seen to generally decrease with annealing temperature. The series resistance increased astronomically after annealing at 700 °C, which was an indication that the SBD had broken down. The failure mechanism of the SBD is attributed to deep inter-diffusions of Ru and Si at the Ru–6H–SiC interface as evidenced by the RBS of the thin films.     

Mechanical properties and wear and corrosion resistance of electrodeposited Ni-Co/SiC nanocomposite coating

Ni-Co/SiC nanocomposite coatings with various contents of SiC nano-particulates were prepared by electrodeposition in a Ni-Co plating bath containing SiC nano-particulates to be co-deposited. The influences of the nanoparticulates concentration, current density, stirring rate and temperature of the plating bath on the composition of the coatings were investigated. The shape and size of the SiC nano-particulates were observed and determined using a transmission electron microscope. The polarization behavior of the composite plating bath was examined on a PAR-273A potentiostat/galvanostat device. The wear behavior of the Ni-Co/SiC nanocomposite coatings was evaluated on a ball-on-disk UMT-2MT test rig. The worn surface morphologies of the Ni-Co/SiC nanocomposite coatings were observed using a scanning electron microscope. The corrosion behavior of the nanocomposite coatings was evaluated by charting the Tafel curves of the solution of 0.5 mol L⁻¹ NaCl at room temperature. It was found that the cathodic polarization potential of the composite electrolyte increased with increasing SiC concentration in the plating bath. The microhardness and wear and corrosion resistance of the nanocomposite coatings also increased with increasing content of the nano-SiC in the plating bath, and the morphologies of the nanocomposite coatings varied with varying SiC concentration in the plating bath as well. Moreover, the co-deposited SiC nano-particulates were uniformly distributed in the Ni-Co matrix and contributed to greatly increase the microhardness and wear resistance of the Ni-Co alloy coating.