Growth of nanowires from annealing SiBONC nanopowders

Silicon carbide (SiC) nanowires were prepared by the gas pressure annealing of SiBONC powders, which were synthesized by pyrolysis of a polymeric precursor. The yield, morphology and composition of the nanowires were influenced by the Si/B ratio in the original ceramic powders, annealing temperature and atmosphere. Annealing temperatures between 1500 and 1600 °C and Si/B molar ratios between 70:30 to 60:40 were suitable for growth of the nanowires. When annealing in an argon (Ar) atmosphere, the SiC nanowires contained little oxygen (O); and the diameters ranged from 20 to 200 nm. Then annealing in a nitrogen (N₂) atmosphere, the nanowires were thicker and rougher, and consisted of a relatively high level of nitrogen. Varied shapes and morphologies of the nanowires were observed for different synthesis conditions. The present novel method makes possible the large-scale fabrication of β-SiC nanowires.     

Raman investigation of defective SiC nanocrystals

Phonon confinement effect and surface optical mode in SiC nanocrystal have been investigated through Raman spectroscopy. Considering high density of stacking faults in SiC grains, the correlation length of RWL (proposed by Richter, Wang, Li to explain phonon confinement in nano silicon) model is determined as a distance between nearby stacking faults. Thus, homogeneous region becomes thin slices in cylindrical SiC grains, which redefines weighting function. Effect of anisotropy of phonon dispersion curve is also analyzed during calculation. The additional 875‐cm⁻¹ band is attributed to defects and amorphous SiC, which is confirmed by transmission electron microscopy. SiC grains are approximated as column array with grain boundary substances regarded as surrounding medium, which explains surface optical phonon mode at 915 cm⁻¹. Copyright © 2015 John Wiley & Sons, Ltd.     

辐照和碳化对SiC空心微球的影响

以聚碳硅烷(PCS)为原料,通过炉内成球技术制备SiC空心陶瓷微球,讨论辐照交联和高温碳化对SiC陶瓷微球化学成分、成键结构和表面特性的影响。结果表明,PCS在热处理过程中的失重率约为35%,其分解温度在400~800℃之间。微球经电子束辐照后会生成以Si—C—Si和Si一O一Si骨架结构为主的三维网络交联结构。碳化过程使Si—C_32键,Si—H键和C—H键断裂,生成以Si—C为主的无定形态Si(C。辐照的均化作用使高温热处理碳化的微球能够维持完好的球壳结构,且具有更好的表面粗糙度和平整性。     

Study of deposition patterns of plating layers in SiC/Cu composites by electro-brush plating

SiC reinforced copper composite coatings were prepared by electro-brush plating with micron-size silicon carbide (SiC) ranging from 1 to 5 μm on pure copper sheet in this paper. The micro-structural characterizations of SiC/Cu composite coatings were performed by optical microscope and Scanning Electron Microscope (SEM) coupled with spectrometer, to study co-deposition mechanism of SiC/Cu. It was found that there were three different patterns of SiC deposition in plating layers during electro-brush plating process, i.e. the particles could deposit inside copper grains, in grain boundaries, or in holes of the surface. To investigate deposition mechanism of each pattern, size of SiC and copper grains was compared. By comparison of size of copper grains and hard particles, SiC were either wrapped in copper grains or deposited in grain boundaries. Moreover, electro-brush plating layers at different brush velocities and current densities were obtained respectively, to analyze the microstructure evolution of the composite coatings. The hardness of plating layers was measured. The results indicated at the current density of 3 A/dm², the SiC/Cu coating was compact with SiC content at a high level and the hardness reached a maximum.     

碳化物衍生碳涂层/氮化硅摩擦副在水润滑下的摩擦学性能

基于SiC陶瓷在水润滑条件下可能出现因摩擦界面无水或过载引起的失效问题,考察了SiC陶瓷、碳化物衍生碳(CDC)涂层在干摩擦和水润滑条件下的摩擦磨损性能.研究结果表明:CDC涂层在干摩擦和水润滑条件下均具有优异的摩擦学性能,可在摩擦界面无水或过载下正常工作;在水润滑条件下,CDC涂层在宽的载荷和滑动速度下具有优异的摩擦学性能.从微结构角度分析比较了CDC涂层与商品石墨的差异,并由此讨论了其摩擦学性能的差异.讨论了加工SiC陶瓷引起的表面织构对CDC涂层在水润滑条件下摩擦学性能的影响机制.     

Effect of Polyvinylpyrrolidone on Rheology of Aqueous SiC Suspensions Stabilized with Polyacrylic Acid

The effect of polyvinylpyrrolidone (PVP) on rheology of aqueous SiC suspensions stabilized with polyacrylic acid (PAA) was investigated. At pH 6.0, as the total amount of dispersants was fixed at 0.3 wt%, the suspensions with co-addition of PAA and PVP obtained much lower viscosity than those added separately, displaying Newtonian behavior. The improvement in rheology of SiC suspensions arose from enhanced steric hindrance, which was caused by the presence of PVP molecules in association with PAA molecules adsorbed on SiC particle surfaces. However, this effect was relatively weak in alkaline condition because of complete dissociation of PAA.     

Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage (I-V) characteristics of Al/Ti/4H-SiC Schottky barrier diodes (SBDs) in the temperature range of 77 K-500 K,which shows that Al/Ti/4H-SiC SBDs have good rectifying behaviour.An abnormal behaviour,in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature (T),has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the Al/Ti/4H-SiC interface.The effective Richardson constant A =154 A/cm 2 · K 2 is determined by means of a modified Richardson plot ln(I 0 /T 2)-(qσ) 2 /2(kT) 2 versus q/kT,which is very close to the theoretical value 146 A/cm 2 · K 2.     

SiC单层内Co空间选位对自旋组态的调控

基于第一性原理的密度泛函理论,对SiC单层不同位置掺杂Co进行了能带结构、电子态密度、净自旋密度和自旋纹理等计算,结果表明不同位置的掺杂引起不同特征的自旋积累及单层的电子结构特性。由于Co的不同选位掺杂而产生一些新奇现象,如扭曲的Co-C键在掺杂SiC内激发了自旋流而诱导了自旋重新分布,不同选位的Co原子通过调整内磁场改变了小极化子内巡游电子的定域属性,增加了Dirac点附近磁振子的色散强度等。这些研究结果为得到一个人工调控量子自旋电路和选频自旋波器件内自旋谷电子提供了理想平台。     

冶金炉料中二氧化硅和碳化硅的联合测定

提出冶金炉料中二氧化硅及碳化硅的联合测定方法，硝酸－氢氟酸－盐酸溶解二氧化硅，用硅氟酸钾容量法测定，残渣经焦硫酸钾溶解杂质，不溶碳化硅以重量法测定，经试样全分析及精密度考证，方法简便、可靠．