SiC1-xGex/SiC 异质结光电二极管特性的研究

使用二维器件模拟软件Medici, 对SiC_1-xGe_x/SiC异质结的光电特性进行了模拟.设计了N型重掺杂SiC层的厚度为1 μm, P型轻掺杂SiC_1-xGe_x层厚为0.4 μm, 二者之间形成突变异质结.在反向偏压3 V、光强度为 0.23 W/cm²的条件下, p-n+ SiC_0.8Ge_0.2/SiC和p-n+ SiC_0.7Ge_0.3/SiC敏感波长λ分别可以达到0.64 μm和0.7 μm, 光电流分别为7.765×10^－7 A/μm和7.438×10^－7 A/μm; 为了进一步提高SiC_1-xGe_x/SiC 异质结的光电流, 我们把p-n+两层结构改进为p-i-n三层结构.在同样的偏压、光照条件下, p-i-n SiC_0.8Ge_0.2/SiC和p-i-n SiC_0.7Ge_0.3/SiC的光电流分别达到1.6734×10－6 A/μm和1.844×10－6 A/μm.     

SiCGe/SiC 异质结及其光电特性的MEDICI 模拟

在对SiC1-xGex三元合金主要特性的研究基础上，利用器件仿真器MEDICI模拟和分析SiCGe/SiC异质结光电二极管的光电特性。计算表明， SiC1-xGex 在Ge组分为0.3时与3C-SiC晶格失配较小，此时的SiCGe/SiC异质结对可见光和近红外光有较好的光谱响应。当P型SiC1-xGex层杂质浓度为1×1015cm-3、厚度1.6μm、x=0.3时，SiC1-xGex /SiC异质结光电二极管对0.52μm可见光有250mA/W左右的响应度，对0.7μm近红外光也有102mA/W左右的响应度。     

在溴化钾粉末中掺入大量α-炭化硅压片的异常红外透射光谱研究

在光谱学实践中，通常由于带测样品颗粒在本征吸收峰附近产生可观的附加散射消光，致使表观吸收峰偏离实际位置，从而得到不的光谱，这就是我们常要采取措施尽量避免的克里斯坦森（Christiansen）效,这一就是在制作压片（例如溴化钾）时，待测样品含量要少（少于2％）。在一次实验中，当在KBr粉末中掺入大量（而非正常要求的少许）的α-SiC微粉后，得到了一个在1052.33cm^-1处有一个尖峰的中红外透射谱。我们发现，这个新现象非常有趣，它与克里斯坦森效应表面上相反，但都可用Lorentz色散模型给予精确地解释。于是称它为反克里斯坦森效应，在该效应出现的频率处两种材料的折射率相等，且吸收系数都非常小。这个新现象也非常有意义，它可用来制造新型的带通滤波器以及准确测定某些材料的折射率等。     

Preparation and characterization of single-phase SiC nanotubes and C-SiC coaxial nanotubes

Preparation conditions of single-phase SiC nanotubes and C-SiC coaxial nanotubes were investigated. The characterization of single-phase SiC nanotubes and C-SiC coaxial nanotubes were carried out. The SiC nanowires, which were made of the catenated SiC grains of 50–200 nm in diameter, were obtained in carbon nanotubes reacted at 1450 °C. The only C-SiC coaxial nanotubes were formed at 1300 °C. A few single-phase SiC nantoubes were synthesized at 1200 °C for 100 h. More than half number of nanotubes reacted at 1200 °C for 100 h were altered to single-phase SiC nantoubes by heat treatment of 600 °C for 1 h in air since the remained carbon was removed. The energy dispersive X-ray spectroscopy analysis revealed that the atomic ratio of Si to C in single-phase SiC nanotubes was almost 1; these single-phase SiC nanotubes consisted of near-stoichiometric SiC grains.     

TiN/SiC纳米多层膜的生长结构与力学性能

研究了TiN/SiC纳米多层膜中立方SiC（B1cubic SiC）的形成及其对TiN/SiC多层膜力学性能的影响.结果表明：在TiN/SiC多层膜中，非晶态的SiC层在厚度小于0.6nm时形成立方结构并与TiN形成共格外延生长的超晶格柱状晶，使多层膜产生硬度和弹性模量显著升高的超硬效应，最高硬度超过60GPa.SiC随着层厚的增加转变为非晶相，从而阻止了多层膜的共格外延生长，使薄膜呈现TiN纳米晶和SiC非晶组成的层状结构特征，同时多层膜的硬度和弹性模量下降.TiN/SiC纳米多层膜产生的超硬效应与立方 关键词： 立方碳化硅 TiN/SiC纳米多层膜 外延生长 超硬效应     

Dependence of chemical composition and bonding of amorphous SiC on deposition temperature and the choice of substrate

Amorphous SiC has superior mechanical, chemical, electrical, and optical properties which are process dependent. In this study, the impact of deposition temperature and substrate choice on the chemical composition and bonding of deposited amorphous SiC is investigated, both 6 in. single-crystalline Si and oxide covered Si wafers were used as substrates. The deposition was performed in a standard low-pressure chemical vapour deposition reactor, methylsilane was used as the single precursor, and deposition temperature was set at 600 and 650 °C. XPS analyses were employed to investigate the chemical composition, Si/C ratio, and chemical bonding of deposited amorphous SiC. The results demonstrate that these properties varied with deposition temperature, and the impact of substrate on them became minor when deposition temperature was raised up from 600 °C to 650 °C. Nearly stoichiometric amorphous SiC with higher impurity concentration was deposited on crystalline Si substrate at 600 °C. Slightly carbon rich amorphous SiC films with much lower impurity concentration were prepared at 650 °C on both kinds of substrates. Tetrahedral Si-C bonds were found to be the dominant bonds in all deposited amorphous SiC. No contribution from Si-H/Si-Si but from sp² and sp³ C-C/C-H bonds was identified.     

具有部分超结的新型SiC SBD特性分析

提出了一种具有部分超结（super junction, SJ）结构的新型SiC肖特基二极管,命名为SiC Semi-SJ-SBD结构,通过将常规SBD耐压区分为常规耐压区和超结耐压区来减小导通电阻,改善正向特性.利用二维器件模拟软件MEDICI仿真分析,研究了不同超结深度和厚度时击穿电压(V_B)和比导通电阻(R_on-sp),与常规结构的SBD比较得出,半超结结构可以明显改善SiC肖特基二极管特性,并得到优化的设计方案,选择超结宽度2< 关键词： SiC肖特基二极管 super junction 导通电阻 击穿电压     

表面氧钝化碳化硅纳米团簇电子结构和光学性质的第一性原理研究

基于密度泛函理论(DFT)和广义梯度近似(GGA),对氧钝化条件下4H-SiC纳米团簇的电子结构和光学性质进行了研究。计算了不同直径的4H-SiC纳米球氧钝化后的能带结构、电子态密度和光学性质。团簇的尺度在0.4~0.9 nm之间,构建表面仅存在硅氧双键和表面仅存在碳氧双键的两种模型。研究表明硅氧双键和碳氧双键所引起的缺陷态位于原4H-SiC的价带和导带之间,并且缺陷态与价带顶的能量差随纳米团簇颗粒直径的增大而减小;缺陷态主要是由Si原子外层电子和氧原子外层电子轨道杂化引起的。同时,由于氧的存在,对碳化硅的结构产生一定的影响,这也是缺陷态形成的一个原因。另外,碳氧双键和硅氧双键钝化对4H-SiC纳米团簇的光学性质有着不同的影响。在表面仅存在C=O的情况下,4H-SiC纳米团簇表现出各向同性的性质。在表面仅存在Si=O的情况下,4H-SiC纳米团簇表现出各向异性的性质。     

Investigation of isothermal and no-isothermal oxidation of SiC powder using an analytic kinetic model

The oxidation of SiC powder has been investigated under non-isothermal and isothermal conditions. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) were employed to investigate the morphological development during the oxidation. The results show that the major oxidation product was amorphous silica and the oxidation reaction was mainly diffusion-controlled. Based on limited experimental data, an analytic kinetic model, which expresses the oxidation weight gain as a function of time and temperature explicitly, has been used to predict the oxidation behavior of SiC powder. The comparison between experimental results and theoretical calculation shows that this new model works very well. The activation energy of non-isothermal and isothermal oxidation of SiC powder has been derived to be 226.5 kJ/mol and 187.5 kJ/mol, respectively.     

FP-LMTO method to calculate the structural,thermodynamic and optoelectronic properties of SixGe1−xC alloys

The structural and electronic properties of the ternary Si_xGe_1?xC alloys have been calculated using the full-potential linear muffin-tin-orbital (FP-LMTO) method based on density functional theory within both local density approximation (LDA) and generalised gradient approximation (GGA). The calculated equilibrium lattice constants and bulk moduli are compared with previous results. The concentration dependence of the electronic band structure and the direct and indirect band gaps are investigated. Using the approach of Zunger and co-workers, the microscopic origins of the band gap bowing are investigated also. Moreover, the refractive index and the optical dielectric constant for Si_xGe_1?xC are studied. The thermodynamic stability of the alloys of interest is investigated by means of the miscibility. This is the first quantitative theoretical prediction to investigate the effective masses, optical and thermodynamic properties for Si_xGe_1?xC alloy, and still awaits experimental confirmations.