用SiC薄膜作防氚渗透阻挡层的研究

采用分步偏压辅助射频溅射法在316L不锈钢表面制备SiC薄膜,作为聚变堆第一壁及包层结构材料的氚渗透阻挡层,扫描电镜观察表明,制备的膜致密,均匀,且与基体结合牢固。X射线衍射分析表明,膜具有（111）面择优取向的β-SiC微晶结构。傅里叶变换红外光谱分析发现,对应于β-SiC的Si-C键存在伸缩振动吸收峰,采用中间复合过渡层技术,可以提高SiC膜与不锈钢基体的结合强度。测量了500℃时带有SiC膜的316L不锈钢的氚渗透率,与表面镀钯膜的316L相比,氚渗透率减低因子（PRF）值达到10^4以上,溅射时衬底偏压和射频功率要影响膜的结构,从而影响PRF值,根据分析结果,从不同的膜制备工艺中初步筛选出了合适工艺。     

液相烧结碳化硅晶界内氮化反应的研究

碳化硅 ( Si C)由于其高度的共价键结合特性而具有高硬度、耐磨性和高化学稳定性等优异性能而成为热机、高温环境和化学化工等领域的研究应用对象 .碳化硅材料的无压烧结最早是由 Prochazka[1] 实现的 .2 0世纪 80年代初期 ,Omori[2 ] 通过采用氧化物 ( Al2 O3,Y2 O3和稀土氧化物等 )添加剂的手段大大降低了无压烧结的温度 .这些氧化物具有较低的共熔点 ,在高温下易形成液相 ,从而促进了碳化硅的晶粒重排和晶体生长 .2 0世纪 90年代以来 ,氮化物和氧化物的混合添加剂 (如 Al N- Y2 O3) [3]被广泛应用于碳化硅的液相烧结 .这是因为氮在…     

Ni-Sm_x/SiC催化剂甲烷二氧化碳重整性能研究

用浸渍法制备了不同钐含量的Ni-Sm_x/SiC催化剂,其中,镍的质量分数为9%,氧化钐的质量分数分别为0、2%、3%、4%、5%、7%。采用常压微型固定床反应器考察了不同催化剂在甲烷二氧化碳重整反应中的催化性能,并用BET、ICP、XRD、H2-TPR、TG-DTA、XPS和TEM等技术对反应前后催化剂进行表征。结果表明,加入钐后,重整反应中甲烷和二氧化碳转化率明显提高。当钐含量为5%时,Ni-Sm5/SiC表现出最好的活性和稳定性,而且反应后催化剂表面积炭量最少。其原因是钐的加入提高了活性组分与载体的相互作用,有效减少了表面积炭、提高了催化剂的稳定性。     

SiCw/6061 Al复合材料中界面相的研究

利用电子显微镜分析研究了ＳｉＣ２／６０６１Ａｌ复合材料的界面相。电子衍射分析表明，ＳｉＣｗ／６０６１Ａｌ面相 体心立方结构，点阵常数为１．２８ｎｍ用Ｘ－射线能谱仪测定了界面相的化学成分。     

Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy

The infrared reflectance spectra of both 4H–SiC substrates and epilayers are measured in a wave number range from 400 cm 1 to 4000 cm 1 using a Fourier-transform spectrometer. The thicknesses of the 4H–SiC epilayers and the electrical properties, including the free-carrier concentrations and the mobilities of both the 4H–SiC substrates and the epilayers, are characterized through full line-shape fitting analyses. The correlations of the theoretical spectral profiles with the 4H–SiC electrical properties in the 30 cm 1 –4000 cm 1 and 400 cm 1 –4000 cm 1 spectral regions are established by introducing a parameter defined as error quadratic sum. It is indicated that their correlations become stronger at a higher carrier concentration and in a wider spectral region (30 cm 1 –4000 cm 1 ). These results suggest that the infrared reflectance technique can be used to accurately determine the thicknesses of the epilayers and the carrier concentrations, and the mobilities of both lightly and heavily doped 4H–SiC wafers.     

Magnetism of single-walled silicon carbide nanotubes doped by boron,nitrogen and oxygen

We calculated, using spin polarized density functional theory, the electronic properties of zigzag (10,0) and armchair (6,6) semiconductor silicon carbide nanotubes (SiCNTs) doped once at the time with boron, nitrogen, and oxygen. We have looked at the two possible scenarios where the guest atom X (B, N, O), replaces the silicon X_Si, or the carbon atom X_C, in the unit cell. We found that in the case of one atom B @ SiCNT replacing a carbon atom position annotated by B_C exhibits a magnetic moment of 1 μ_B/cell in both zigzag and armchair nanotubes. Also, B replacing Si, (B_Si), induce a magnetic moment of 0.46 μ_B/cell in the zigzag (10,0) but no magnetic moment in armchair (6,6). For N substitution; (N_C) and (N_Si) each case induce a magnetic moment of 1 μ_B/cell in armchair (6,6), while N_Si give rise to 0.75 μ_B/cell in zigzag (10,0) and no magnetic moment for N_C. In contrast the case of O_C and O_Si did not produce any net magnetic moment in both zigzag and armchair geometries.     

碱溶ICP—AES法同时测定AISi／SiC复合材料中的高含量硅和低含量？…

本文采用碱溶ＩＣＰ－ＡＥＳ法对ＡＩＳｉ／ＳｉＣ复合材料中的高含量硅和低含量镁、钛、铁的测定进行研究,着重进行基体元素铝及特测定元素硅、镁、钛、铁之间的干扰试验,进行了碱度试验和酸度试验,测定和ＡＩＳｉ／ＳｉＣ复合材料中的硅、镁、钛、铁含量,得到了较好的精密度和准确度。方法简便可靠,可获得满意的分析结果。     

长条型SiC反射镜轻量化及支撑结构的设计

从满足空间光学遥感器反射镜在复杂工况下综合面形误差要求的角度出发,介绍了长条型反射镜柔性支撑结构材料的选择,讨论了反射镜轻量化及柔性支撑结构的设计方法,采用有限元法进行了工程分析及多次迭代优化,设计出了一种在不同重力方向下引入面形误差变化量RMS值小于λ/40(λ=632.8nm)的反射镜柔性支撑结构。检测实验证明,各项指标均满足设计要求。     

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO2/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the record low density of interface traps(~4×10¹⁰cm^-2·eV^-1@Ec-0.2 eV)is demonstrated on SiO2/SiC stack formed by microwave plasma oxidation.And high quality SiO2 with very flat interface(0.27-nm root-mean-square roughness)is obtained.High performance Si C metal–oxide–semiconductor field-effect transistors(MOSFETs)with peak field effect mobility of 44 cm^-2·eV^-1is realized without additional treatment.These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.