Nondestructive evaluation of high‐temperature elastic modulus of 3C‐SiC using Raman scattering

A nondestructive method is reported to measure the high‐temperature modulus of 3C‐SiC coating and bulk samples using Raman scattering. Within the temperature range from 20 °C to 900 °C, both the longitudinal optical and transverse optical phonon frequencies decrease linearly as the temperature increases. The elastic moduli derived from the longitudinal optical phonon agree with previous results measured using other techniques. It is further shown that the grain size and impurity only have a negligible effect on the elastic modulus of 3C‐SiC. Copyright © 2011 John Wiley & Sons, Ltd.     

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采用分子动力学模拟方法研究了样品温度对Ar+与SiC样品表面相互作用的影响。由模拟结果可知,SiC样品中Si原子的溅射产额随着温度的升高而增加,而温度对C原子的溅射产额影响不大。在相同温度下,Si原子的溅射产额要高于C原子的溅射产额。溅射出来的Si原子和C原子主要来源于样品的表层区域,样品中的Si和C原子密度、键密度及它们的成键方式也发生了较大的变化。初始样品中Si和C原子的密度是均匀的,而被轰击过后的样品表面Si原子的密度要高于C原子,而样品中部C原子的密度要高于Si原子。初始样品都是Si-C键,成键方式为Si-Csp3;被轰击过后又有Si-Si和C-C键,成键方式也发生了变化,还有Si-Csp1和Si-Csp2。     

具有SiC基底负折射率薄膜热辐射特性

本文研究了具有SiC基底的负折射率薄膜复合体的热辐射特性。利用传输矩阵方法及基尔霍夫定律推导了复合层的热辐射特性计算公式。通过对比,分析了负折射率薄膜对SiC热辐射特性的影响。结果显示,负折射率薄膜能够显著地改变传统半导体材料的热辐射特性。通过调整薄膜结构的体系参数,还可以对复合体热辐射的方向特征和光谱特征进行相应的调制。     

Synthesis, characterizations and applications of some nanomaterials (TiO2 and SiC nanostructured films, organized CNT structures, ZnO structures and CNT-blood platelet clusters)

TiO₂ nanostructured films have been synthesized by the hydrolysis of Ti[OCH(CH₃)₂]₄ as the precursor. These films have been utilized for the dissociation of phenol contaminant in water. Free-standing nanostructured film of silicon carbide (SiC) has been synthesized, employing a simple and new route of spray pyrolysis technique utilizing a slurry of Si in hexane. Another study is done on organized carbon nanotube (CNT) structures. These are made in the form of hollow cylinders (50 mm length, 4 mm diameter and 1.5 mm wall thickness). These CNT-based cylinders are made of conventional CNT and bamboo-shaped CNT. The filtrations of heavy hydrocarbons andE. coli bacteria from water have been carried out. In addition to this, ZnO nanostructures have also been studied. Another study concerns CNT-blood platelet clusters.     

β-SiC(001)-(2×1)表面结构的第一性原理研究

利用缀加平面波加局域轨道(APW+LO)的第一性原理方法计算了β-SiC(001)-(2×1)表面的原子及电子结构. 原子结构的计算结果表明，与Si(001)-(2×1) 表面的非对称性Si二聚体模型不同，β-SiC(001)-(2×1)表面为对称性的Si二聚体模型，其二聚体的Si原子间键长也较大，为0.269nm. 电子结构的计算结果表明，在费米能级处有明显的态密度，因此β-SiC(001)-(2×1)表面呈金属性. 在带隙附近存在四个表面态带,其中的两个占有表面态带已由价带的同步辐射光电子能谱实验得到证实. 关键词： 碳化硅 缀加平面波加局域轨道方法 原子结构 电子结构     

SiC纳米棒Raman光谱的数值模拟方法

本文利用求解力常数矩阵的方法,得到了3C-SiC的声子态密度;并以此为基础对比SiC纳米棒的Raman光谱,从定性的角度对实验结果给予了初步解释。     

Role of polytypism and degree of hexagonality on the photoinduced optical second harmonic generation in SiC nanocrystalline films

Photoinduced optiсal second harmonic generation was studied in nanocrystalline SiC films prepared by the method of direct ion deposition. For the studies were chosen three types of polytypes (with different degree of hexagonality) – 24R with degree hexagonality G=25, 27R-G=44, 33R with – G=36. The bicolor photoinduced treatment was performed by the wavelengths 1064nm/532 nm by 15 ns YAG:Nd laser. The efficiency of the output SHG was evaluated by ratio of the corresponding signal intensities with respect to the references and by the time delay between the SHG and the fundamental maxima. Explanation of the observed effect is given within a framework of the occurrence of the nano-trapping levels in the film crystalline interfaces.     

Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source–drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate–source and gate–drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate–drain and gate–source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.     

基于4H-SiC的高能量分辨率α粒子探测器

为突破传统半导体核探测器耐高温与抗辐照性能不足的瓶颈,采用4H-SiC宽禁带半导体材料研制了4H-SiC探测器,并研究其构成的探测系统对α粒子的能量分辨率和能量线性度。所研制4H-SiC探测器漏电流低,当外加反向偏压为200V时,其漏电流仅14.92nA/cm2。采用具有5种主要能量α粒子的226 Ra源研究其构成的探测系统对α粒子的能量分辨率,获得4H-SiC探测系统对4.8~7.7 MeV能量范围内α粒子的能量分辨率为0.61%~0.90%,与国际上报道的高分辨4H-SiC探测系统能量分辨率一致。同时,实验结果表明:4H-SiC探测系统对该能量范围内α粒子的能量线性度十分优异,线性相关系数为0.999 99。     

硼掺杂碳化硅负载Pt催化剂的甲醇电催化氧化性能

以硼掺杂碳化硅(B0.1SiC)为载体,采用循环伏安法在B0.1SiC载体上电沉积Pt纳米粒子制备了Pt/B0.1SiC催化剂。利用X射线光电子能谱、X射线衍射、氮气吸附-脱附、扫描电镜及透射电镜等测试方法对催化剂的晶型、表面性质及形貌进行了表征。结果表明,硼原子掺杂进入SiC晶格并取代了Si位点,使B0.1SiC载体的导电性增强;Pt纳米粒子均匀地分布在B0.1SiC载体上,平均粒径为2.7 nm。与相同条件下制备的Pt/SiC催化剂相比,Pt/B0.1SiC具有较大的电化学活性表面积、更高的甲醇催化氧化活性和稳定性。