包覆燃料颗粒碳化硅层的Raman光谱研究

本文研究了球床高温气冷堆燃料元件中包覆颗粒碳化硅层的Raman光谱. 通过分析不同制备条件下的碳化硅层断面的Raman光谱的峰位、半高全宽与强度, 明确了包覆颗粒中碳化硅层的晶相特征、密度变化和剩余应力等物性.通过分析不同密度碳化硅层一级Raman峰的同步、异步二维相关谱, 发现其LO模较TO模对于密度变化的响应更敏感. 这些结论为研究球床高温气冷堆燃料元件包覆颗粒中碳化硅层的结构及其物性有指导意义.     

APPLICATION AND THEORETICAL ANALYSIS OF C/SiC COMPOSITES BASED ON CONTINUUM DAMAGE MECHANICS

Based on the thermodynamic theory, an orthotropic damage constitutive model was developed to describe the nonlinear mechanical behavior of C/SiC composites. The different nonlinear kinematic and isotropic hardening functions were adopted to describe accurately the damage evolution processes. The damage variables were defined with the damaged modulus and the initial undamaged modulus on energy equivalence principle. The initial orthotropy and damage coupling were presented in the damage yield function. Tensile and in-plane shear loading and unloading tests were performed, and a good agreement between the model and the experimental results was achieved.     

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-terminated 4H-SiC substrates

Graphene with different surface morphologies were fabricated on 8° -off-axis and on-axis 4H-SiC(0001) substrates by high-temperature thermal decompositions. Graphene grown on Si-terminated 8° -off-axis 4H-SiC(0001) shows lower Hall mobility than the counterpart of on-axis SiC substrates. The terrace width is not responsible for the different electron mobility of graphene grown on different substrates, as the terrace width is much larger than the mean free path of the electrons. The electron mobility of graphene remains unchanged with an increasing terrace width on Siterminated on-axis SiC. Interface scattering and short-range scattering are the main factors affecting the mobility of epitaxial graphene. After the optimization of the growth process, the Hall mobility of the graphene reaches 1770 cm 2 /V·s at a carrier density of 9.8.×10 12 cm 2 . Wafer-size graphene was successfully achieved with an excellent double-layer thickness uniformity of 89.7% on a 3-inch SiC substrate.     

碳纤维增韧的陶瓷基复合材料在高温高应变率下的压缩力学行为

利用高温电子万能试验机和具有高温同步自组装功能的Hopkinson压杆对二维C/SiC复合材料 进行了应变率为10-4~103s-1,温度为293~1273K下的单轴压缩力学性能测试。实验结果表明:二维C/ SiC复合材料破坏时并未表现出典型的脆性破坏,而是在应力达到压缩强度时出现了显著的应变软化,在经 历了较大的变形后才最终破坏,同时材料还表现出良好的高温承载能力及一定的温度和应变率依赖性。随着 温度的升高,复合材料的压缩强度呈降低的趋势。与准静态下室温压缩时相比,材料在1273K 时的压缩强 度的降低程度不超过30%,但压缩强度对应变率的敏感性随着温度的升高而增大。由于高温下试样氧化,C/ SiC复合材料压缩强度对应变率的敏感性在温度为1073K时显著增大。     

On the topographic and optical properties of SiC/SiO2 surfaces

The roughness of the semiconductor surface substantially influences properties of the whole structure, especially when thin films are created. In our work 3C SiC, 4H SiC and Si/a-SiC:H/SiO₂ structures treated by various oxidation a passivation procedures are studied by atomic force microscopy (AFM) and scanning tunnelling microscopy (STM). Surface roughness properties are studied by fractal geometry methods. The complexity of the analysed surface is sensitive to the oxidation and passivation steps and the proposed fractal complexity measure values enable quantification of the fine surface changes. We also determined the optical properties of oxidized and passivated samples by using visual modelling and stochastic optimization.      

6H-SiC（0001）-6[KF（]3[KF）]×6[KF（]3[KF）]R30°重构表面的同步辐射角分辨光电子能谱研究

利用同步辐射角分辨光电子能谱（SRARPES）对6H-SiC（0001）-6[KF（]3[KF）]×6[KF（]3[KF）] R30°重构表面的电子结构和表面态进行了研究.通过鉴别价带谱中来自于体态的信息,可以推断出重构表面的费米能级位于体态价带顶之上（2.1±0.1）eV处.实验测出的体能带结构与理论计算的结果较为符合.在重构表面上发现三个表面态,分别位于结合能-0.48 eV（S₀）,-1.62 eV（S₁）和-4. 关键词： 角分辨光电子能谱 碳化硅（SiC） 电子结构 表面态     

3C-SiC(001)-(2×1)表面原子与电子结构研究

采用广义梯度近似的密度泛函理论方法计算了3C-SiC（001）-（2×1）表面的原子及电子结构．计算结果表明,3C-SiC（001）-（2×1）表面为非对称性的Si二聚体模型,其二聚体的Si原子间键长为0.232 nm．电子结构的计算结果表明,在费米能级处有明显的态密度,因此3C-SiC（001）-（2×1）表面呈金属性．在带隙附近存在四个表面态带,一个位于费米能级附近,一个位于费米能级以上5 eV处,另外两个位于费米能级以下的价带中． 关键词： 碳化硅 密度泛函理论计算 原子结构 电子结构     

AlGaN插入层对6H-SiC上金属有机物气相外延生长的GaN薄膜残余应力及表面形貌的影响

研究了具有不同台阶数目的AlGaN插入层对在6H-SiC衬底上利用金属有机物气相外延（MOVPE）生长的GaN体材料残余应力和表面形貌的影响.高分辨率X射线衍射测试表明样品的c轴晶格常数随台阶数目的增多而增大;低温光荧光谱中GaN发光峰也随着台阶数目增多而发生蓝移,这些变化都反映出GaN中残余张应力的减小.此外,原子力显微镜测试表明样品表面起伏和粗糙度也都随着插入层的引入和台阶数目的增多得到了明显的改善. 关键词： 残余应力 表面形貌 SiC衬底 AlGaN插入层     

用MEVVA低能离子注入制备表层SiC/Si异质结构及其室温的光致发光特性

利用金属蒸汽真空弧离子源（MEVVA）进行离子束合成,制备了过剂量C^＋离子注入到单晶硅衬底的样品。然后利用热退火,在表层制备了连续8-SiC层,形成表层SiC／Si的异质结构。利用傅里叶变换红外光谱（FTIR）对其成键特征和微结构进行了分析,通过光电子能谱分析（XPS）和原子力显微镜（AFM）分析了样品的成分分布及其表面形貌。最后对其室温下的光致发光特性随热退火的时间和温度的变化进行了研究。结果表明：光致发光谱（PL）表现出430,560nm两个发光峰,分别对应于纳米碳化硅和块状立方碳化硅发光的特征峰。我们认为小颗粒的晶化碳化硅的尺寸及其相对比例对PL发光峰位和强度有较大的影响,用纳米晶粒量子效应（NSUQC）理论和表面态理论对发光现象及其变化规律进行了初步的解释。     

先驱体聚合物粘结法制备SiC纳米多孔陶瓷

采用SiC纳米粉体与聚碳硅烷(PCS)为原料低压成型低温烧结制备SiC纳米多孔陶瓷,研究了PCS含量对烧成纳米多孔陶瓷性能的影响。SEM和AFM微观形貌分析表明,PCS裂解产物将SiC纳米颗粒粘结起来,烧成陶瓷内部有大量的纳米孔存在。烧成SiC纳米多孔陶瓷孔径分布呈单峰分布、孔径分布范围窄,随着PCS含量的增大烧成多孔陶瓷强度增大,但孔隙率降低、烧结过程中坯体尺寸线收缩率增大。PCS含量为20wt%时三点弯折强度为36.8MPa,孔隙率为39.5%,平均孔径为49.3 nm。