Hydrogen adsorption on SiC nanotube under transverse electric field

Using density functional theory, we present a model to illustrate that under a transverse electric field the overall amount of hydrogen storage can be increased on the SiC nanotube. Due to the cylindrical shape of the nanotube, an electric field does not have the similar effects on the different adsorption sites. Although it has the desired effects on some sites, the electric field may lead the binding energy to decrease on some other sites. We demonstrate that the binding energy decreases slightly just on the two small areas and increases significantly on the largest part of the nanotube surface.     

Corrosion resistance of electroless Cu–P and Cu–P–SiC composite coatings in 3.5% NaCl

The Cu–P and Cu–P–SiC composite coatings on carbon steel substrates were deposited via electroless plating. The anti-corrosion properties of Cu–P and Cu–P–SiC coatings were studied in 3.5% NaCl solution. The anti-corrosion properties of Cu–P and Cu–P–SiC coatings were investigated in 3.5% NaCl solution by the weight loss, potentiodynamic polarisation and electrochemical impedance spectroscopy (EIS) techniques. It has been found that the shift in the corrosion potential (E_corr) towards the noble direction, decrease in the corrosion current density (I_corr), increase in the charge transfer resistance (R_ct) and decrease in the double layer capacitance (C_dl) values indicated an improvement in corrosion resistance with the incorporation of SiC particles in the Cu–P matrix. The effects of varying the SiC concentration on the corrosion resistance of carbon steel were investigated and it was found that the best anti-corrosion property of Cu–P–SiC is at 5 g L^?1 SiC in the bath formulation.     

Direct synthesis of luminescent SiC quantum dots in water by laser ablation

Direct synthesis of luminescent SiC quantum dots in pure deionized water by laser ablation is reported. A zeta‐potential of –49 mV, higher than for nanoparticles produced by electrochemical etching, suggests a higher colloidal stability of the laser‐produced nanoparticles. IR spectroscopy shows that surface charges related to carboxylate anions ensure long‐term stability of the colloidal solutions based on the as‐prepared SiC quantum dots. Main radiative channel at room temperature corresponds to the recombination of quantumly confined photogenerated charge carriers. Emission from the nanoparticles is mainly centred at 2.75 eV regardless of laser power used for ablation. According to photoluminescence spectra, a partial transformation of the SiC quantum dots from cubic to hexagonal crystalline arrangement is supposed. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Circular and rectangular via holes formed in SiC via using ArF based UV excimer laser

Circular via holes with diameters of 10, 25, 50 and 70 μm and rectangular via holes with dimensions of 10 μm × 100 μm, 20 μm × 100 μm and 30 μm × 100 μm and drilled depths between 105 and 110 μm were formed in 300 μm thick bulk 4H-SiC substrates by Ar/F₂ based UV laser drilling (λ = 193 nm) with a pulse width of ∼30 ns and a pulse frequency of 100 Hz. The drilling rate was linearly proportional to the fluence of the laser, however, the rate decreased for the larger via holes. The laser drilling produces much higher etch rates (229-870 μm/min) than conventional dry etching (0.2-1.3 μm/min) and the via entry can be tapered to facilitate subsequent metallization.     

Raman scattering and magnetizations studies of (Al, Cr)-codoped 4H-SiC

In this study, the insertion of both Al and Cr atoms into SiC matrix has been experimentally evidenced by X-ray diffraction, Raman scattering, elements analysis and magnetic measurements. Structure analysis showed that (Al, Cr)-codoped SiC has a single-phase 4H-crystal structure and no trace of any other impurity phases were detected. Raman scattering showed that several new features appeared in (Al, Cr)-codoped 4H-SiC: (1) the vanishing of the folded longitudinal-optical phonons modes-plasmon coupling (FLOPC) modes with x=(q/q_B)=0; (2) an obvious absorbing peak was found in Si_1−x−yAl_xCr_yC with y=0.0203 at%; (3) folded transverse-optical (FTO) mode shifts to high frequency and linewidths [full widths at half maximum (FWHM)] decrease with increase in Cr content. Magnetic properties characterizations showed that weak ferromagnetism order is established. With increase in Cr content, the magnetization decreased. No clear influence of Al doping on the magnetic properties of codoped 4H-SiC is evidenced while the magnetic origin should be ascribed to be induced by Cr. It is speculated that doping Cr elements at Si sites destroy the effective coupling of the spins induced by Al doping. The major role of Al is to stabilize the codoped crystal structure as 4H-single-phase.     

A simple and tailor‐made fabrication of porous silicon carbide from functionalized kraft pulp paper

Porous silicon carbide (SiC) materials were fabricated using the polymer‐derived ceramics method with kraft pulp papers (KPP) and a commercial polycarbosilane, the allylhydridopolycarbosilane (AHPCS), as starting materials. For this, KPP, propargylated KPP, or phosphorylated KPP were used to be impregnated by the AHPCS, with or without Karstedt catalyst. The pyrolysed materials were characterized at different stages, by using thermogravimetric analysis (TGA) coupled with mass spectrometry, X‐ray diffraction (XRD), and scanning electron microscopy (SEM). Depending on the nature of the initial template, various architectured SiC ceramics were successfully obtained with adjustable porosities. The key role of the previous functionalization of the papers was highlighted in terms of interactions at the interface between the polymer and the lignocellulosic handsheets. It led to either replica or sacrificial template methods. Thus, it was possible to tune the open porosity of the porous carbon and β‐SiC materials between 14.8% and 92.9%, with ceramic yields varying from 12% to 71%.     

X-ray topographic imaging of (Al, Ga)N/GaN based electronic device structures on SiC

Structural defects and their impact on the performance, lifetime and reliability of electronic devices are of permanent interest for crystal growers and device manufacturers. This is especially true for epitaxial (Al, Ga)N/GaN based high electron mobility transistor (HEMT) structures on 4H-SiC (0 0 0 1) substrates. This work points out how micropipes, dislocations and grain boundaries present in a 4H-SiC (0 0 0 1) wafer and subsequently overgrown with an (Al, Ga)N-GaN-HEMT layer sequence show up in X-ray topographic images and two-dimensional XRD maps. Using X-ray topography in transmission geometry, micropipes and other structural defects are localized non-destructively below structured metallization layers with a spatial resolution of a few tens of micrometers.     

反应烧结碳化硅平面反射镜的光学加工

介绍了100mm口径反应烧结碳化硅平面反射镜的光学加工工艺流程。按照流程依次介绍了在粗磨成形、细磨抛光和精磨抛光过程中使用的机床、磨具和磨料以及采用的工艺参数和检测方法。介绍了在光学加工各个步骤中应注意的问题。展示了加工后反应烧结碳化硅平面反射镜的实物照片。给出了面形精度和表面粗糙度的检测结果:面形精度(95%孔径)均方根值(RMS)为0.030λ(λ=632.8nm),表面粗糙度RMS值达到了1.14nm(测量区域大小为603 6μmⅹ448 4μm)。     

Effect of Cu pre‐deposition on the interface structure between the C‐SiC coatings and stainless steel

The copper dispersion‐strengthened matrix composites (Cu/C? SiC) were fabricated on the stainless steel by using magnetron sputtering and ion‐beam mixing. The pre‐deposition of Cu element is used to modify the interface structure, and hence, to develop the compatibility between Fe substrate and C‐SiC coating. The results show that the copper layer can effectively broaden the transition layer, where the elements of the coating could be completely mixed with the elements of the substrate. The following heat treatment on it can further broaden the transition layer, i.e. heat treatment can provide more compatibility between C‐SiC coating and Fe substrate. Copyright © 2008 John Wiley & Sons, Ltd.     

化学气相反应法制备不同碳基体表面SiC涂层组织结构分析

采用化学气相反应法, 以同种工艺分别在石墨和C/C复合材料表面制备了SiC涂层, 借助X射线衍射仪(XRD)、扫描电镜(SEM)及能谱分析等手段分析了涂层的微观结构, 研究了不同碳基体对SiC涂层结构和表面形貌的影响, 并初步对比考察了涂层的高温抗氧化性能. 结果表明: 制备的SiC涂层整体致密, 与基体结合良好, 但存在明显的结构差异. 石墨表面制得的SiC涂层呈梯度分布, 涂层主要由致密外层及过渡内层组成, 而C/C复合材料表面制得的SiC涂层仅由致密外层组成; 在1823 K的空气氧化氛围中, 与C/C复合材料SiC涂层试样相比, 石墨SiC涂层试样表现出更好的高温抗氧化性能, 经30 h氧化及7次循环热震实验后, 涂层试样的氧化失重率仅为0.182%.