SiC纳米杆的弛豫性能研究

采用Tersoff势对SiC驰豫性能进行了分子动力学模拟.模拟了SiC在驰豫过程中的动态平衡变化过程，研究了表面效应和小尺寸效应对原子位置，原子能量分布的影响.模拟结果表明，SiC纳米杆受表面效应和小尺寸效应的影响很大，在不加外载和约束的情况下，出现了不同于宏观SiC杆的弯扭屈伸现象，最终形成了带有一定扭转弯曲量、总能量达到最低的稳定状态. 关键词： SiC纳米杆 分子动力学 表面效应 小尺寸效应     

PECVD SiC optical waveguide loss and mode characteristics

We report the fabrication of single mode SiC (silicon carbide) waveguides and the measurement of their propagation loss. By studying the effect of sidewalls scattering loss due to surface roughness and by reducing it, minimal propagation loss of 2.3 dB/cm for the TM polarization is measured in the visible at 0.633 μm. This loss can be used as a benchmark for further development of SiC microphotonic components and circuit for sensor systems in harsh environment.     

Preparation of SiC nanowires with fins by chemical vapor deposition

SiC nanowires with fins have been prepared by chemical vapor deposition in a vertical vacuum furnace by using a powder mixture of milled Si and SiO₂ and gaseous CH₄ as the raw materials. The products were characterized by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). These investigations confirm that the nanowires with fins are cubic β-SiC. The diameter of the fins is about 100–120 nm and the diameter of the inner core stems is about 60–70 nm. The formation process of the β-SiC nanowires with fins is analyzed and discussed briefly.     

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利用化学气相反应法对掺杂石墨材料进行了SiC梯度涂层,研究了SiC梯度涂层对掺杂石墨材料热力学性能以及微观结构的影响。获得了约100μm的SiC涂层,涂层后的材料导热性能下降,而机械强度有所增加。对涂层表面的物相成分分析表明,除了SiC之外,还有少量的单质Si。厚膜SiC梯度涂层的掺杂石墨材料在HT-7托卡马克装置中经等离子体放电实验后,SiC的颗粒形貌发生了明显的变化,涂层厚度下降到约30μm。     

Formation of epitaxial SiC nanocrystals

Epitaxial 3C-SiC grains are formed at 1190 °C in the top region of silicon, when Si wafers coated by SiO₂ are annealed in CO atmosphere. The formed SiC grains are 40-50 nm high and 100 nm wide in cross-section and contain only few defects. Main advantage of the method is that the final structure is free of voids.The above method is further developed for the generation of SiC nanocrystals, embedded in SiO₂ on Si, and aligned parallel with the interface. The nanometer-sized SiC grains were grown into SiO₂ close to the Si/SiO₂ interface by a two-step annealing of oxide covered Si: first in a CO, than in a pure O₂ atmosphere. The first (carbonization) step created epitaxial SiC crystallites grown into the Si surface, while the second (oxidation) step moved the interface beyond them. Conventional and high resolution cross-sectional electron microscopy showed pyramidal Si protrusions at the Si/SiO₂ interface under the grains. The size of the grains, as well as their distance from the Si/SiO₂ interface (peak of pyramids) can be controlled by the annealing process parameters. The process can be repeated and SiC nanocrystals (oriented in the same way) can be produced in a multilevel structure.     

Fissile core and Tritium-Breeding Blanket: structural materials and their requirements

High radiation resistant structural materials for fusion and fission nuclear power plants are a key issue for the development of both types of reactors. Selection criteria, elements of metallurgy of the selected materials, and the major issues as they are revealed by the results of the present development programmes, are presented. At low temperature (300 °C) ferritic/martensitic steels are suffering from He-embrittlement, associated with possible hardening due to α/α^′ unmixing. The kinetics of hardening and embrittlement versus dose, especially saturation with dose, are still open key issues, difficult to settle on the basis of a purely experimental programme. Important progress is still to be made in mastering the initial microstructure, inclusion cleanness and joining techniques of oxide dispersion strengthened steels for higher heat resistance. Physics modeling as presented in this issue should promote guidance to the understanding of the mechanisms involved, provide solutions to master the initial microstructure and phase stability, and mitigate the in-service property degradation. To cite this article: J.-L. Boutard et al., C. R. Physique 9 (2008).     

用SiC薄膜作防氚渗透阻挡层的研究

采用分步偏压辅助射频溅射法在316L不锈钢表面制备SiC薄膜，作为聚变堆第一壁及包层结构材料的氚渗透阻挡层，扫描电镜观察表明，制备的膜致密，均匀，且与基体结合牢固。X射线衍射分析表明，膜具有（111）面择优取向的β-SiC微晶结构。傅里叶变换红外光谱分析发现，对应于β-SiC的Si-C键存在伸缩振动吸收峰，采用中间复合过渡层技术，可以提高SiC膜与不锈钢基体的结合强度。测量了500℃时带有SiC膜的316L不锈钢的氚渗透率，与表面镀钯膜的316L相比，氚渗透率减低因子（PRF）值达到10^4以上，溅射时衬底偏压和射频功率要影响膜的结构，从而影响PRF值，根据分析结果，从不同的膜制备工艺中初步筛选出了合适工艺。     

SiC_p/Al-Si合金梯度材料的磨损特性

采用离心铸造技术制备了 Si Cp/ Al- 8.8% Si合金梯度材料 ,并用扫描电子显微镜、HV- 5型小负荷维氏硬度计和ML- 10 0型销 -盘磨粒磨损试验机等设备研究了该梯度材料组织、硬度及耐磨性的梯度分布规律 .结果表明 :因 Si C颗粒的密度比铝合金液的大 ,其在离心力场中偏聚于试样的外侧 ,含量由外向内逐渐降低直至消失 ,呈梯度变化 ;Si Cp/Al- 8.8% Si合金梯度材料的硬度由外向内逐渐降低 ,呈梯度变化 ,与 Si C颗粒的分布规律一致 ;Si Cp/ Al- 8.8% Si合金梯度材料的耐磨性能取决于 Si C颗粒的数量及其分布 ,耐磨性能由外向内逐渐变差 ,呈梯度变化 ,与硬度的分布规律一致     

Numerical Determination of Damping in Metal Matrix Composites

Damping in metal matrix composites is mainly caused by inelastic matrix deformation induced by the great difference in the mechanical properties of the single constituents of the materials. In this study, the finite-element method in combination with a highly accurate material model is employed to examine the effects of both the fiber volume fraction and the external loading amplitude on the energy dissipation process in an Al/SiC composite under a cyclic mechanical load.     

ATLEED研究6H-SiC(0001)(3~(0.5)×3~(0.5))R30°重构表面

低能电子衍射 (LEED)对 6H SiC(0 0 0 1) (3× 3)R30°表面的研究结果表明 ,该表面有 1/3单层的Si原子吸附在T4 空位上与第一个SiC复合层中的三个Si原子键接 ,它们之间的垂直距离为 0 171nm .通过对该表面 10个非等价垂直入射衍射束的自动张量低能电子衍射 (ATLEED)计算 ,得到“最佳结构”由于表面SiC复合层堆积顺序不同而产生的三种表面终止状态 (surfacetermination)的混合比例为S1∶S2∶S3 =15∶15∶70 ,理论计算与实验I V曲线比较得到可靠性因子RVHT=0 .16 5 ,RP=0 .142 ,表明表面生长符合能量最小化的台阶生长机制