TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

The use of SiO₂/4H–SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) can be problematic due to high interface state density (D_it) and low field-effect mobility (μ_fe). Here, we present a tetra-ethyl-ortho-silicate (TEOS)-based low-pressure chemical vapor deposition (LPCVD) method for fabricating the gate oxide of 4H–SiC MOSFETs using nitric oxide post-deposition annealing. SiO₂/4H–SiC MOS capacitors and MOSFETs were fabricated using conventional wet and TEOS oxides. The measured effective oxide charge density (Q_eff) and D_it of the TEOS-based LPCVD SiO₂/4H–SiC MOS capacitor with nitridation were 4.27 × 10¹¹ cm⁻² and 2.99 × 10¹¹ cm⁻²eV⁻¹, respectively. We propose that the oxide breakdown field and barrier height were dependent on the effective Q_eff. The measured μ_fe values of the SiO₂/4H–SiC MOSFETs with wet and TEOS oxides after nitridation were, respectively, 11.0 and 17.8 cm²/V due to the stable nitrided interface between SiO₂ and 4H–SiC. The proposed gate stack is suitable for 4H–SiC power MOSFETs.     

碳纤维表面原位SiC纳米纤维的合成与生长

基于化学气相反应法,以高纯Si和SiO₂为反应源材料,在碳纤维表面原位生长β-SiC纳米纤维。采用XRD、SEM和TEM 等分析测试手段对SiC纳米纤维进行了表征分析,研究了不同反应温度和时间对生成β-SiC纳米纤维微观形貌和结构的影响,并探讨了β-SiC纳米纤维的生长机制。研究结果表明：采取化学气相反应法能够制备高质量、高纯度的β-SiC纳米纤维,纳米纤维的直径约为100~300 nm。随着反应温度的提高和时间的延长,纳米纤维的产额增加,且微观组织形貌发生了变化。结合制备过程和纳米纤维微观结构的观察分析,表明气-固(VS)机制是SiC纳米纤维生长的主要机理。     

耐超高温连续SiC纤维制备过程中纤维结构和取向演变

以聚铝碳硅烷(PACS)为先驱体, 采用先驱体转化技术制备出耐超高温的连续SiC纤维. 研究了制备过程中纤维结构和取向的演变及其对纤维性能的影响. 研究结果表明, 耐超高温连续SiC纤维制备过程中纤维结构的演变随温度变化分为分子间交联(≤600 ℃)、基本无机化(600—800 ℃)、完全无机化(800—1300 ℃)和结晶重排(1300—1800 ℃) 四个阶段; 纤维的取向随着结构的演变而改变, 连续PACS纤维沿轴向具有的微弱取向, 经热分解后演变到1300 ℃的产物中, 1300 ℃后随着结晶重排的发生, 纤维由各向异性转变为各向同性; 结构和取向的转变对于纤维性能具有很大的影响.     

三维网络SiC增强铜基复合材料的干摩擦磨损性能

用销—盘式高温摩擦磨损试验机研究了85Cu—6Sn—6Zn—3Pb合金及三维网络SiC增强铜基复合材料的干摩擦磨损性能，测量了铜合金及不同体积分数的复合材料在不同温度及载荷下的摩擦系数和磨损率；用扫描电子显微镜观察磨损表面形貌，并分析了三维网络SiC对铜合金磨损机制的影响．结果表明：复合材料的耐磨性远优于铜合金，而且随着三维网络SiC体积分数、温度及载荷的增加，复合材料的抗磨损性能明显提高；这种新型复合材料的摩擦系数随载荷变化保持稳定，在很宽的温度范围内，摩擦系数的稳定性均优于铜合金．这是由于三维网络SiC在磨损表面形成硬的微突体并起承载作用，同时其独特的结构制约了基体合金的塑性变形和高温软化，有利于磨损表面氧化膜的留存．这种复合材料作为传动及制动用摩擦材料具有明显的优越性．     

Isoconversional method to explore the cure reaction mechanisms and curing kinetics of DGEBA/EMI‐2,4/nano‐SiC system

The curing kinetics of the diglycidyl ether of bisphenol‐A (DGEBA)/2‐ethyl‐4‐methylimidazole (EMI‐2,4)/nano‐sized carborundum (nano‐SiC) system was studied by means of nonisothermal differential scanning calorimetry (DSC). An isoconversional method of kinetic analysis yields a dependence of the effective activation energy E on the extent of conversion that decreases initially, and then increases as the cure reaction proceeds. The variations of E were used to study the cure reaction mechanisms, and the Shrinking Core Model was used to study the resin–particle reaction. The results show that the presence of nano‐SiC particles prevents the occurrence of vitrification, as well as inhibits the cure reaction. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 371–379, 2006     

Ni/4H-SiC 肖特基势垒磁场下输运性质的分析

采用高真空电子束蒸发的方法将镍 (Ni)淀积在 4H SiC(0 0 0 1)面上 ,制备出良好的Ni/4H SiC肖特基接触 .研究了Ni/4H SiC肖特基势垒在强磁场和低温下的I -V特性 ,并以热电子发射理论为基础 ,结合弛豫近似玻尔兹曼方程对Ni/4H SiC肖特基势垒在磁场下的输运性质进行了分析和计算 ,发现电流的变化与磁场的平方和电压成线性关系 ,和温度成反比关系 ,与实验结果基本符合     

Defect reduction in sublimation grown SiC bulk crystals

For several years the major focus of material issues in SiC substrates was laid on the reduction of macroscopic defects like polytype inclusions, low angle grain boundaries and micropipes. Although significant improvements have been achieved, there are still shortcomings in material quality that have to be overcome. Since it is clear that dislocations are the main reason for degradation in power devices the prevailing attention has shifted to that field of material research. The aim of our work was to investigate the mechanisms that affect the generation of macroscopic and microscopic defects during sublimation growth. Intense studies were utilized on dislocation and stacking fault formation. For this reason we systematically varied parameters of the growth process and applied several methods for the characterization to evaluate material properties most precisely, e.g. KOH-defect-etching, X-ray-diffraction, electron microscopy and optical microscopy. The investigations were accompanied by failure analysis of devices of the Schottky type. We found out that for the improvement of substrate quality emphasis has to be laid on the reduction of thermoelastic stress in the growing crystal. From results of numerical calculations we were able to derive moderate growth conditions with reduced temperature gradients prevailing during the growth process. As a consequence we succeeded in decreasing the defect concentration. The best value so far achieved for the sum of both BPD and TED was 7×10³ cm⁻².     

Characterization of a SiC/SiC composite by X-ray diffraction, atomic force microscopy and positron spectroscopies

A SiC/SiC composite is characterized by X-ray diffraction, atomic force microscopy and various positron spectroscopies (slow positron implantation, positron lifetime and re-emission). It is found that besides its main constituent 3C-SiC the composite still must contain some graphite. In order to better interpret the experimental findings of the composite, a pyrolytic graphite sample was also investigated by slow positron implantation and positron lifetime spectroscopies. In addition, theoretical calculations of positron properties of graphite are presented.     

SiC纳米杆的弛豫性能研究

采用Tersoff势对SiC驰豫性能进行了分子动力学模拟.模拟了SiC在驰豫过程中的动态平衡变化过程，研究了表面效应和小尺寸效应对原子位置，原子能量分布的影响.模拟结果表明，SiC纳米杆受表面效应和小尺寸效应的影响很大，在不加外载和约束的情况下，出现了不同于宏观SiC杆的弯扭屈伸现象，最终形成了带有一定扭转弯曲量、总能量达到最低的稳定状态. 关键词： SiC纳米杆 分子动力学 表面效应 小尺寸效应