Thermal behaviour of advanced composite materials based on SiC fibres

Emanation thermal analysis (ETA) was used for characterization of thermal behaviour of SiC_f/SiC composites on heating in argon and air, respectively. Effect of gas environment (argon, air) and helium ions implantation on the microstructure development of the SiC_f/SiC composite prepared by chemical vapour infiltration (CVI) from Nicalon CG fibres was investigated under in situ conditions of heating. The annealing of near surface structure irregularities was observed in the range 280-700°C and evaluated by means of the mathematical model, assuming that the structure irregularities served as diffusion paths for radon. The ETA reflected the formation of amorphous silica and its subsequent crystallization to crystoballite. Morphology of the SiC_f/SiC samples before and after the heat treatments was characterized by means of SEM. This revised version was published online in July 2006 with corrections to the Cover Date.     

碳热还原制备不同形貌的碳化硅纳米线

以酚醛树脂为碳源，正硅酸乙酯为硅源，硝酸镧和表面活性剂为调控剂，通过溶胶-凝胶和碳热还原反应制备了不同形貌的碳化硅纳米线。采用X射线衍射、扫描电子显微镜、透射电子显微镜和X射线散射能谱对所制备的碳化硅纳米线进行表征。结果表明，通过此方法所制备的碳化硅纳米线均为立方结构的β-SiC，分别具有直线状、竹节状和链珠状、分枝状等不同形貌。金属催化剂和表面活性剂对碳化硅纳米线的结构和形貌变化有重要影响。     

聚酰亚胺LB膜热解制备SiC薄膜的XPS研究

用XPS对沉积在硅基片上的聚酰亚胺LB膜以及由它真空热解制备的SiC薄膜进行了研究 ,并对其形成过程进行了跟踪分析 .XPS结果显示聚酰亚胺LB膜结构均匀 ,质量良好 ;真空热解时 ,约在 6 70℃时LB膜中的C与衬底Si反应形成SiC ;Ar离子溅射深度俄歇谱表明所制备的SiC膜中Si和C浓度成梯度分布 ,说明SiC是由Si和C相互扩散反应形成的     

耐超高温SiC(Al)纤维先驱体——聚铝碳硅烷纤维的研究

以聚硅碳硅烷(PSCS)与乙酰丙酮铝(Al(AcAc)3)为原料,在常压高温条件下反应制备出聚铝碳硅烷(PACS),经过熔融纺丝制备了PACS纤维.应用GPC、IR、XPS、29Si-NMR、27Al-NMR、TG、SEM、元素分析和增重等一系列分析,分别对PACS纤维的微观组成、结构以及性能进行了分析.研究结果表明,以原料质量配比为6∶100(Al(AcAc)3∶PSCS)合成的PACS化学式为SiC2.0H7.5O0.13Al0.018,数均分子量为1700左右,最适宜制备PACS纤维;PACS纤维中主要存在SiC4、SiC3H等结构,同时存在Si—O—Al键;在氮气气氛中,PACS纤维的陶瓷产率达到52%左右;预氧化处理,PACS纤维中Si—H键与空气中的氧反应形成Si—O—Si交联结构,较聚碳硅烷(PCS)纤维易于氧化,经过预氧化的PACS纤维陶瓷产率达到80%左右,是制备耐超高温SiC(Al)陶瓷纤维的合适纤维;用预氧化PACS纤维制备的SiC(OAl)纤维和SiC(Al)纤维抗拉强度高,耐高温性能好.     

Dependence of electronic and optical properties of multilayer SiC and GeC on stacking sequence and external electric field

The electronic and optical properties of different stacked multilayer SiC and GeC are investigated with and without external electric field (EEF). The band gaps of multilayer SiC and GeC are found smaller than that of monolayer SiC and GeC due to the interlayer coupling effect. When EEF is applied, the direct band gaps (ΔK–M) of multilayer SiC and direct band gaps (ΔK–K) of multilayer GeC all turn to indirect band gaps (ΔK–G) as the band at the G point drops dramatically toward zero. The imaginary part ε₂(ω)s of multilayer SiC and GeC show that new absorption peaks between 2–5 eV appear when the polarized direction is perpendicular to the layer plane, and new absorption peaks in infrared region appear as the EEF is higher than a certain point when the polarized direction is parallel to the layer plane. Our calculations reveal that different stacking sequences and EEF can provide a wide tunable band structures and optical properties for multilayer SiC and GeC.     

碳纤维表面原位SiC纳米纤维的合成与生长

基于化学气相反应法,以高纯Si和SiO₂为反应源材料,在碳纤维表面原位生长β-SiC纳米纤维。采用XRD、SEM和TEM 等分析测试手段对SiC纳米纤维进行了表征分析,研究了不同反应温度和时间对生成β-SiC纳米纤维微观形貌和结构的影响,并探讨了β-SiC纳米纤维的生长机制。研究结果表明：采取化学气相反应法能够制备高质量、高纯度的β-SiC纳米纤维,纳米纤维的直径约为100~300 nm。随着反应温度的提高和时间的延长,纳米纤维的产额增加,且微观组织形貌发生了变化。结合制备过程和纳米纤维微观结构的观察分析,表明气-固(VS)机制是SiC纳米纤维生长的主要机理。     

Dispersion Mechanism of Superfine SiC Particles in the Different Condition Liquid

SiC@A1(OH)₃-Y(OH)₃ core-shell composite particles are synthesized by co-precipitation method for strengthening the antioxidation of SiC at high temperature. To reach better A1(OH)₃-Y(OH)₃ composite shell and higher coating ratio on the SiC particles surfaces, SiC particles must be adequately dispersed in the SiC suspension during the coating process. The dispersion mechanism of SiC particles is investigated by the sedimentation method. Through test and analysis, the optimum conditions of the dispersion of SiC particles in the SiC suspension are sedimentating for 10 minutes, ultrasonic dispersion for 10 minutes, the lower SiC concentration, pH = 9, the dispersant content for the 2% volume of SiC suspension and using the polyelectrolyte dispersant, respectively.     

Room-temperature magnetic properties of SiC based nanowires synthesized via microwave heating method

Two kinds of ferromagnetic SiC based nanowires with and without Ni catalyst were successfully synthesized by employing microwave heating method. The comprehensive characterizations and vibrating sample magnetometer (VSM) have been applied to investigate the micro-structures and magnetic properties of as-grown nanowires. For the nanowires synthesized without using Ni catalyst, the diameters and lengths are in the range of 20–60 nm and dozens of micrometers, respectively. Particularly, the results of transmission electron microscopy (TEM) show that the nanowires consist of SiC core and SiO_x shell. The SiC/SiO_x coaxial nanowires exhibit room-temperature ferromagnetism with saturation magnetization (Ms) of 0.2 emu/g. As to the nanowires obtained using Ni catalyst, the scanning electron microscopy (SEM) results indicate that the Ni catalyzed nanowires have a nano-particle attached on the tip and a uniform diameter of approximately 50 nm. The vapor-liquid-solid (VLS) growth mechanism can be used to explain the formation of the Ni catalyzed nanowires. The detection result of VSM indicates that the Ni catalyzed nanowires possess the paramagnetism and the ferromagnetism, simultaneously. The enhancement of the ferromagnetism, compared with the SiC/SiO_x coaxial nanowires, could be attributed to the Ni₂Si and NiSi phases.     

Structure and stability of a silicon cluster on sequential doping with carbon atoms

SiC is a highly stable material in bulk. On the other hand, alloys of silicon and carbon at nanoscale length are interesting from both technological as well fundamental view point and are being currently synthesized by various experimental groups (Truong et. al., 2015 [26]). In the present work, we identify a well-known silicon cluster viz., Si₁₀ and dope it sequentially with carbon atoms. The evolution of electronic structure (spin state and the structural properties) on doping, the charge redistribution and structural properties are analyzed. It is interesting to note that the ground state SiC clusters prefer to be in the lowest spin state. Further, it is seen that carbon atoms are the electron rich centres while silicon atoms are electron deficient in every SiC alloy cluster. The carbon–carbon bond lengths in alloy clusters are equivalent to those seen in fullerene molecules. Interestingly, the carbon atoms tend to aggregate together with silicon atoms surrounding them by donating the charge. As a consequence, very few Si–Si bonds are noted with increasing concentrations of C atoms in a SiC alloy. Physical and chemical stability of doped clusters is studied by carrying out finite temperature behaviour and adsorbing O₂ molecule on Si₉C and Si₈C₂ clusters, respectively.     

Fabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates

We report on the growth and characterization of n-ZnO/p-4H-SiC heterojunction diodes. Our n-ZnO layers were grown with radical-source molecular beam epitaxy (RS-MBE) on p-4H-SiC epilayers, which was previously prepared in a horizontal hot-wall reactor by chemical vapour deposition (CVD) on the n-type 4H-SiC wafers. Details on the n-ZnO growth on 8-off 4H-SiC wafers, the quality of the layers and the nature of realized p–n structures are discussed. Mesa diode structures were fabricated. Al was sputtered through a circle mask with diameter 1 mm and annealed to form Ohmic contacts to p-SiC. Ohmic contacts to the n-ZnO were formed by 30 nm/300 nm Ti/Au sputtered by electron beam evaporation. Electrical properties of the structures obtained have been studied with Hall measurements, and current–voltage measurements (I–V). I–V measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained.