Analytical derivation of a formula for the reduction of computation time by the voxel crossing technique used in room acoustical simulation

Computation times of room acoustical simulation algorithms still suffer from the time consuming search for ray-wall-intersections. Spatial subdivision may speed up ray tracing considerably. For room acoustics, where the number of surface polygons (walls) is not so high, the voxel technique appears suitable. The voxel crossing algorithm is very fast. However, its performance was not yet investigated up to now. Voxels are small cubes by which the space is subdivided periodically. The advantage: Only in the rare case a voxel intersects a wall the intersection point needs to be computed. In this paper, by estimating the probabilities of such intersections, an analytical formula is derived, by which the optimum degree of spatial subdivision and the factor of acceleration of the algorithm can be forecasted. It turns out that the computation time increases only with instead of with K₀ (the number of polygons of the room). Thus, on a modern PC, computation time for a full room acoustical simulation even for highly complicated rooms may be reduced by a factor in the order of 100, i.e. to a few seconds.     

DNA纤维的X射线衍射分析与双螺旋结构的发现

概述了DNA化学结构式确立的过程,介绍了x射线衍射分析的概念、原理和方法,阐述了物理学家威尔金斯和物理化学家富兰克林在用实验事实证明DNA双螺旋结构方面所作出的巨大贡献。     

Effects of shaded facets on the performance of metal-coated etched diffraction grating demultiplexer

A finite-difference time-domain (FDTD) method combined with a periodic boundary condition is used to analyze the diffraction efficiency of an etched diffraction grating (EDG) demultiplexer coated with a metallic film at the backside. The numerical results show that the diffraction loss is mainly due to the scattering effect of shaded facets of a metal-coated grating at both the polarizations. However, the same shaded facets can produce a higher loss for a TM polarization than that for a TE polarization, which induces a higher polarization dependent loss (PDL) of the demultiplexer.     

SRPES investigation of tungsten oxide in different oxidation states

The microstructure and morphology of metal oxide films have a large influence on the sensitivity, selectivity and stability of the gas sensors and catalysts. Considering that the sensing properties of thin film sensors are strongly related to their microstructures and to the exact stoichiometry of their surfaces, an accurate control of these parameters is extremely important for the production of sensors with reproducible behavior. In this paper, an influence of preparation and annealing conditions on the physical and chemical properties of tungsten oxide thin film is investigated. Two types of samples having polycrystalline structure were prepared by different methods (deposition under UHV conditions, oxidation of metallic tungsten layer in air). The samples were reduced by heating in UHV at different temperatures and/or by Ar ion bombardment. It was found that the stability of tungsten oxide layer with respect to the treatment procedures depends strongly on the preparation conditions of the sample. The reduction process is discussed in terms of different oxidation states resolved in the W4f photoelectron spectrum. Easy reducibility of the tungsten oxide layer prepared by vacuum deposition was found to be a consequence of its nano-crystalline structure.     

New terahertz dispersive device for single-shot spectral measurements of terahertz pulse

A new terahertz dispersive device designed for single-shot spectral measurements of broadband terahertz pulses is proposed. With two-dimensional quasi-randomly distributed element design, the device exhibits approximately the dispersive property of single-order diffraction in far field. Its far-field diffraction pattern is experimentally verified employing a continuous terahertz source centered at 2.52 THz and a pyroelectric focal-plane-array camera, which is in good agreement with the numerical result. The device provides a new approach for direct single-shot spectral measurements of broadband terahertz waves.     

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge （001） at low temperature

We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.     

制作多焦点全息透镜的新方法

本文提出了一种制作多焦点全息透镜的新光路,消除了干板上的多余条纹,从而有效地抑制了杂散光,并导出了用此光路制作的平面型全息透镜的衍射效率,给出了实验结果。     

Epitaxial growth of cobalt clusters on the bare and the oxide film grown on NiAl(1 0 0) surfaces

The structure of the nano-sized cobalt clusters on bare NiAl(1 0 0) and an oxidized NiAl(1 0 0) surfaces have been investigated by AES, LEED and RHEED. The deposition of Co onto bare NiAl(1 0 0) at room temperature led to small crystalline Co grains and surface asperities of substrate. The latter is likely induced by replacement of surface Al, Ni atoms by Co deposit. At 800 K Co particles aggregate to form clusters, but incorporation of Co into bulk NiAl(1 0 0) could occur upon annealing at 900 K. On the other hand, pure face-centered cubic (fcc) phase of Co crystallites of ≈1 nm in diameter with inclusion of smaller-sized particles (D < 1 nm) are observed on Θ-Al₂O₃ after Co deposition at room temperature. After annealing the Co nano-clusters grow larger at expense of small particles (D ≈ 3 nm), where the [1 1 0] and [−1 1 0] axis of the Co(0 0 1) facets are parallel to the [1 0 0] and [0 1 0] directions of (0 0 1)oxide, respectively. The in-plane lattice constant of Co clusters is ca. 4% larger than that of bulk Co, yielding less strain at the Co/oxide interface. A 15° ± 10% random orientation of the normal to (0 0 1) facet of Co clusters with respect to (0 0 1)oxide surface was deduced from the “arc”-shape reflection spots in RHEED. These results suggest that both orientation and phase of Co clusters are strongly affected by the nature and structure of oxide surface.     

Residual stress/strain analysis in thin films by X-ray diffraction

Residual stresses are found in the majority of multilayer thin film structures used in modem technology. The measurement and modeling of such stress fields and the elucidation of their effects on structural reliability and device operation have been a “growth area” in the literature, with contributions from authors in various scientific and engineering disciplines.

In this article the measurement of the residual stresses in thin film structures with X-ray diffraction techniques is reviewed and the interpretation of such data and their relationship to mechanical reliability concerns are discussed.     

Nd:YAG laser synthesis of nanostructural V2O5 from vanadium oxide sols: Morphological and structural characterizations

Vanadium oxide thin films were prepared by sol-gel method, then subjected to Nd:YAG laser (CW, 1064 nm) radiation. The characteristics of the films were changed by varying the intensity of the laser radiation. The nanocrystalline films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). XRD revealed that above 102 W/cm² the original xerogel structure disappears and above 129 W/cm² the films become totally polycrystalline with an orthorhombic structure. From TEM observations, we can see that due to laser radiation, the originally fibrillar-like particles disappear and irregular shaped, layer structured V₂O₅ particles are created. From XPS spectra we can conclude that due to laser radiation the O/V ratio increased with higher intensities.