碲化铅/硫化锌红外多层滤光片的光谱漂移研究

采用碲化铅和硫化锌作为镀膜材料,研制了空间红外光学系统使用的红外多层带通滤光片。本文首次利用导纳轨迹图解技术,当在空间低温条件下使用时,对由碲化铅的折射率变化引起的光谱漂移机理进行了研究。根据多层膜各膜层间存在的光学厚度的补偿效应,建立了光谱漂移模型。并对设计的滤光片采用对分法计算了它在低温条件下波长的漂移量,计算结果与研制出的滤光片实测结果吻合很好。并成功地将研究结果应用于滤光片的设计,对原设计结果进行了准确的修正,使得最终研制的滤光片在低温下完全满足使用要求。     

光学薄膜保护封闭漆

用普通光学镀膜机蒸镀的光学膜,如果暴露在大气中一经受潮,镀膜材料的折射率发生变化,其结果会令光学薄膜的中心波长产生漂移,因而影响薄膜的光学特性。如蒸镀软膜,受潮后漂移则更为严重。另外软膜表面强度差,易擦伤和脱膜。封闭漆既能有效防潮,又能改善光学薄膜表面强度,而且不影响光学薄膜的光学特性。     

以陶瓷厚膜为绝缘层的红色ZnS:Sm,Cl电致发光器件

报道采用高介电常数的陶瓷厚膜作绝缘层、ＺｎＳ：Ｓｍ,Ｃｌ作为发光层的红色薄膜电致发光器件。测量了器件的电致发光光谱和亮度电压曲线,研究了发光机理和效率电压等特性。制备的器件在电驱动下１６Ｖ启亮,最大亮度为１８．４ｃｄ／ｍ＾２,最大效率为０．０６１ｍ／Ｗ。     

1-羟基-5-十二烷氧基-萘LB膜结构和取向的光谱研究

用红外透射,反射光谱及紫外可见吸收光谱方法研究了１－羟基－５－十二烷基－萘ＬＢ膜及溶液状态下的结构,分子取向。研究结果表明分子在溶液中主要是以单体形式存在;在ＬＢ膜中是以聚集体形式存在。     

Evaluation of phenyldimethylethoxysilane treated high-performance thin-layer chromatographic plates. Application to analysis of flavonoids inScutellariae radix

Summary The retention and selectivity of flavonoids (baicalin, baicalein, wogonin, oroxylin A) inScutellariae radix have been studies by high-performance thin-layer chromatography on phenyldimethylethoxysilane-treated silica plates. The silica plates treated with phenyl groups were used for physical and chemical analysis. From elemental carbon analysis, the maximum number of bonded phenyl surface groups per gram was calculated to be 0.467×10²¹ (Oginal silica plate: Merck Art. 15109, Silica gel 100 F₂₅₄). With methanol-1/15 M phosphate buffer (pH 6.2) mixtures as mobile phase, baicalin, baicalein, wogonin, and oroxylin A inScutellariae radix were separated. It has been shown that phenyl-treated plates are more suitable for selective separation of baicalin, baicalein, wogonin, and oroxylin A than octadecyl-treated plates.     

Nanocrystalline ceramic films for efficient conversion of light into electricity

Transparent nanocrystalline films of oxide semiconductors such as TiO₂ and Fe₂O₃ have been prepared on a conducting glass support employing a sol-gel procedure. The films are composed of nanometer-sized particles sintered together to allow for percolative charge carrier transport. The internal surface of these films is very high, roughness factors of the order of 1000 being readily obtained. Electric polarization was applied for forward and reverse biasing of the films and the resulting optical changes have been analyzed to derive their flat band potential. Band gap excitation of such nanocrystalline semiconductors produces electron-hole pairs which migrate through the film to be collected as electric current. Steady state photolysis and time resolved laser techniques have been applied to scrutinize the mechanism of light induced charge separation within the nanostructure. When derivatized with a suitable chromophore, TiO₂ films give extraordinary efficiencies for the conversion of incident photons into electric current, exceeding 90% for certain transition metal complexes within the wavelength range of their absorption band. The underlying physical principles of these astonishing findings will be discussed. Exploiting this discovery, we have developed a new type of photovoltaic device whose overall light to electric energy conversion yield is 10% under simulated AM 1.5 solar radiation.     

Methyltriethoxysilane-derived sol-gel coatings doped with silver metal particles

Silica sol-gel films were prepared by dipping, starting from an acid catalyzed solution of methyltriethoxysilane (MTES) and tetraethoxysilane (TEOS). Silver metal nanoparticles were produced in the silica layer by introducing in the sol-gel precursor solution AgNO₃ or AgClO₄·H₂O. The silver ions were thermally reduced in air at 800°C, giving an intense yellow coating film. The silver metal particles were observed by transmission electron microscopy and X-ray diffraction. The diameter of the silver particles was found to be about 10 nm. Absorption measurements in the UV-Vis were used to evaluate the volume fraction of silver colloids embedded in the silica layer.     

Atmosphere effects in the processing of silicon carbide and silicon oxycarbide thin films and coatings

Silicon carbide and silicon oxycarbide films were prepared from solutions of polycarbosilane and methyldimethoxysilane + tetraethoxysilane, respectively, and deposited on different substrates (Si wafers, stainless steel plates, sapphire and SiC fibers). The coatings were heated at different temperatures and in different atmospheres, such as regular grade argon, ultra high purity and argon vacuum. The films were characterized using different techniques (FT-IR, XRD, SIMS, Ellipsometry).The influence of the processing parameters (heat treatment temperature and atmosphere) on the final microstructure of the coatings is discussed in this article.