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991.
992.
This paper investigates the effectiveness of the Quadrature Method of Moments (QMOM) in representing droplet size distributions present in low-pressure steam turbine stages. In particular, distributions that result during transonic flow with sufficient supercooling and high expansion rate for primary and secondary nucleation to occur along the flow path. It is shown that the discretization of the droplet size distribution inherent in QMOM is robust for representing a polydispersed distribution with sizes several orders of magnitude apart, and originating from separate condensation phenomena. Inclusion of the QMOM method would thus provide a significant improvement in condensation models currently in use, which generally rely on a monodispersed representation of the droplet distribution. 相似文献
993.
Consider a tandem queue of two single-server stations with only one server for both stations, who may allocate a fraction α of the service capacity to station 1 and 1−α to station 2 when both are busy. A recent paper treats this model under classical Poisson, exponential assumptions.Using work conservation and FIFO, we show that on every sample path (no stochastic assumptions), the waiting time in system of every customer increases with α. For Poisson arrivals and an arbitrary joint distribution of service times of the same customer at each station, we find the average waiting time at each station for α = 0 and α = 1. We extend these results to k ≥ 3 stations, sample paths that allow for server breakdown and repair, and to a tandem arrangement of single-server tandem queues.This revised version was published online in June 2005 with corrected coverdate 相似文献
994.
Magneto-optical imaging was used to study dendritic flux penetration in films of MgB2. By repeating experiments under the same external conditions, reproducible features were seen in the pattern formation; dendrites tend to nucleate from fixed locations along the edge. However, their detailed structure deeper inside the film is never reproduced. The reproducibility in nucleation sites is explained as a result of edge roughness causing field hot spots. 相似文献
995.
We have measured the time evolution of Ge nucleation density on SiO2 over a temperature range of 673–973 K and deposition rates from 5.1 × 1013 atoms/cm2 s (5 ML/min) to 6.9 × 1014 atoms/cm2 s (65 ML/min) during molecular beam epitaxy. The governing equations from mean-field theory that describe surface energetics and saturation nucleation density are used to determine the size and binding energy of the critical Ge nucleus and the activation energy for Ge surface diffusion on SiO2. The critical nucleus size is found to be a single Ge atom over substrate temperatures from 673 to 773 K, whereas a three-atom nucleus is found to be the critical size over substrate temperatures from 773 to 973 K. We have previously reported 0.44 ± 0.03 eV for the Ge desorption activation energy from SiO2. This value, in conjunction with the saturation nucleation density as a function of substrate temperature, is used to determine that the activation energy for surface diffusion is 0.24 ± 0.05 eV, and the binding energy of the three-atom nucleus is 3.7 ± 0.1 eV. The values of the activation energy for desorption and surface diffusion are in good agreement with previous experiments of metals and semiconductors on insulating substrates. The small desorption and surface diffusion activation barriers predict that selective growth occurring on window-patterned samples is by direct impingement of Ge onto Si and ready desorption of Ge from SiO2. This prediction is confirmed by the small integral condensation coefficient for Ge on SiO2 and two key observations of nucleation behavior on the window-patterned samples. The first observation is the lack of nucleation exclusion zones around the windows, and second is the independence of the random Ge nucleation density on patterned versus unpatterned oxide surfaces. We also present the Ge nucleation density as a function of substrate temperature and deposition rate to demarcate selective growth conditions for Ge on Si with a window-patterned SiO2 mask. 相似文献
996.
997.
P.?Hájková P.??patenka J.?Krumeich P.?Exnar A.?Kolouch J.?Matou?ek P.?Ko?í 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2009,54(2):189-193
This paper deals with photocatalytic activity of silver treated TiO2 films. The TiO2 films were deposited on glass substrates by plasma enhanced chemical vapor deposition (PECVD) in a vacuum reactor with radio
frequency (RF) low temperature plasma discharge in the mixture of oxygen and titanium isopropoxide vapors (TTIP). The depositions
were performed under different deposition conditions. Subsequently, the surface of TiO2 films was modified by deposition of silver nanoparticles. Photocatalytic activity of both silver modified and unmodified
TiO2 films was determined by decomposition of the model organic matter (acid orange 7). Selected TiO2 samples were used for tests of antibacterial activity. These tests were performed on Gram-negative bacteria Escherichia coli. The results clearly proved that presence of silver clusters resulted in enhancement of the photocatalytic activity, which
was up to four times higher than that for pure TiO2 films. 相似文献
998.
999.
广义连续流场论中新的功能及功率能率原理 总被引:17,自引:8,他引:9
提出极性和非局部极性连续统场论中具有交叉项的新的功能及功率能率原理,并据此和广义的Piola定理一次性地而且无需其它要求地推导出所有相应的运动方程和边界条件以及新的能量和能率均衡方程。同时,建立起广义连续统力学中的新的能量和能率均衡原理。给出的新的功能及能率原理纠正了现有文献中所有有关不带交叉项的能量和能率原理的不完整性。 相似文献
1000.