Synthesis and optical nondestructive evaluation of GaN nanorods on silicon surfaces with gold catalyst

Nanometric gallium-nitride rods were grown on a silicon (1 1 1) substrate through a chemical vapor deposition process with gold particles as the catalyst. Randomly distributed gallium-nitride rods of 20–200 nm in diameter and of various densities and lengths were formed under different deposition conditions. Characterization analyses, such as scanning electron microscopy and optical reflection spectroscopy, have been carried out on samples containing gallium-nitride rods different in size, shape, length and density. While the scanning electron microscopy shows directly the images of the sample surfaces, the optical spectroscopy provides a nondestructive evaluation of the sample surfaces, especially helpful for checking the uniformity of the samples.     

硅衬底GaN基LED薄膜芯片的应力调制

将Si衬底GaN基LED外延薄膜经晶圆键合、去硅衬底等工艺制作成垂直结构GaN基LED薄膜芯片,并对其进行不同温度的连续退火,通过高分辨X射线衍射(HRXRD)研究了连续退火过程中GaN薄膜芯片的应力变化。研究发现:垂直结构LED薄膜芯片在160~180℃下退火应力释放明显,200℃时应力释放充分,GaN的晶格常数接近标准值。继续升温应力不再发生明显变化,GaN薄膜的晶格常数只在标准晶格常数值附近波动。扫描电子显微镜给出的bonding层中Ag-In合金情况很好地解释了薄膜芯片应力的变化。     

Monolithic integration of an AlGaN/GaN metalinsulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

In this paper,we present a monolithic integration of a self-protected AlGaN/GaN metal-insulator field-effect transistor(MISFET).An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a selfprotected function for a reverse bias.This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage.In the smart monolithic integration,this integrated diode can block a reverse bias(> 70 V/μm) and suppress the leakage current(< 5 × 10-11 A/mm).Compared with conventional monolithic integration,the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration.And the power loss is lower than 50% in conduction without forward current degeneration.     

White-light-emitting diodes using GaN-excited CdSe/CdS/ZnS quantum dots

Fluorescence-based white-light-emitting diodes (WLEDs) were fabricated using blue GaN chips and green- and red-emitting CdSe/CdS/ZnS quantum dots (QDs). The coordinate and color temperature of the WLEDs could be varied because of the size-tunable emission of CdSe QDs from 510 to 620 nm. Warm and cold white emissions were confirmed with the color temperature ranging from 4000 to 9000 K. Color coordinates were analyzed at different bias. The fast enhancement of blue emission resulted in the shift of color coordinates to the cold side. The stability of white emission during operation was analyzed; stable spectra were achieved within 90 min.     

分子动力学模拟研究点突变(Met108→Leu108)对树胶醛糖结合蛋白与配体作用的影响

为了研究点突变(Met108→Leu108)对树胶醛糖结合蛋白(ABP)与配体结合能力的影响,对ABP、ABP结合树胶醛糖复合物及ABP结合半乳糖复合物以及它们各自的突变体分别进行60 ns的分子动力学模拟.模拟结果表明,108号残基突变前后,电子等排体的两个氨基酸残基,使蛋白与配体间的范德华相互作用发生明显变化,同时导致蛋白的内部运动也发生变化,进而影响蛋白与配体的相互作用.进一步分析表明,突变前后的蛋白构象变化都趋向于两个结构域张开,而与配体的结合可减缓张开程度.     

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics

Metal–organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 × 10⁸ cm⁻² for Sample B with a lattice-matched In_0.17Al_0.83N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness. The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).     

First‐principles identification of defect levels in Er‐doped GaN

Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first‐principles hybrid density functional study of the structure, energetics, and thermodynamic transition levels of Er‐related defect complexes in GaN. We discover for the first time that Er_Ga–C_N–V_N, a defect complex of Er, a C impurity, and an N vacancy, and Er_Ga–O_N–V_N, a complex of Er, an O impurity, and an N vacancy, form defect levels at 0.18 eV and 0.46 eV below the conduction band, respectively. Together with Er_Ga–V_N, a complex of Er and an N vacancy which has recently been found to produce a donor level at 0.61 eV, these defect complexes provide explanation for the Er‐related defect levels observed in experiments. The role of these defects in optical excitation of the luminescent Er center is also discussed.     

Interface formation of Al2O3 on n‐GaN(0001): Photoelectron spectroscopy studies

Al₂O₃ insulator layers were deposited step by step by the physical vapor deposition (PVD) method onto gallium nitride in the wurtzite form, n‐type and (0001)‐oriented. The substrate surface and the early stages of Al₂O₃/n‐GaN(0001) interface formation were characterized in situ under ultra‐high vacuum conditions by X‐ray and ultraviolet photoelectron spectroscopy (XPS, UPS). The electron affinity (EA) of the substrate cleaned by annealing was 3.6 eV. Binding energies of the Al 2p (76.0 eV) and the O 1s (532.9 eV) confirmed the creation of the Al₂O₃ compound in the deposited film for which the EA was 1.6 eV. The Al₂O₃ film was found to be amorphous with a bandgap of 6.9 eV determined from the O 1s loss feature. As a result, the calculated Al₂O₃/n‐GaN(0001) valence band offset (VBO) is ?1.3 eV and the corresponding conduction band offset (CBO) 2.2 eV.     

Orientations of ZnO grown on GaN

On semipolar epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X‐ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of // and The other oriented ZnO domains then grow on faceted with and with good coherency with the ‐oriented grains. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)