第Ⅰ种非对称三态叠加多模叠加态光场的高次和压缩--第一正交分量的N次方H压缩效应

构造了第孙中禹种强度不等的非对称三态叠加多模叠加态光场|ψ1(ABC)〉q.利用多模压缩态理论研究了态|ψ1(ABC)〉q第一正交分量高次和压缩.结果发现:①当构成态|ψ1(ABC)〉q的三个多模相干态光场的强度不相等时,在一定条件下,态|ψ1(ABC)〉q的第一正交分量可出现任意幂次的高次和压缩.②当上述的三个多模相干态光场强度相等时,态|ψ1(ABC)〉q的第一正交分量的高次和压缩现象消失.在这种情况下,态|ψ1(ABC)〉q的第一正交分量恒处于NH最小测不准态.     

Quantum information entropies of the eigenstates for the Pschl-Teller-like potential

Shannon entropy for lower position and momentum eigenstates of Pschl-Teller-like potential is evaluated. Based on the entropy densities demonstrated graphically, we note that the wave through of the position information entropy density ρ(x) moves right when the potential parameter V1 increases and its amplitude decreases. However, its wave through moves left with the increase in the potential parameter |V2|. Concerning the momentum information entropy density ρ(p), we observe that its amplitude increases with increasing potential parameter V1 , but its amplitude decreases with increasing |V2|. The Bialynicki-Birula-Mycielski (BBM) inequality has also been tested for a number of states. Moreover, there exist eigenstates that exhibit squeezing in the momentum information entropy. Finally, we note that position information entropy increases with V1 , but decreases with |V2|. However, the variation of momentum information entropy is contrary to that of the position information entropy.     

第一性原理研究Hg2CuTi型Heusler合金Ti2FeB的磁性和半金属性

基于密度泛函理论的GGA计算,我们具体研究了Hg2 CuTi型Heusler合金Ti2 FeB的电子结构和磁性质,结果发现Ti2FeB合金在其费米面处存在100％的自旋极化,并在5.1～6.2(A)晶格范围内被保留.Ti2FeB具有大约0.5 eV的半金属带隙和1μB的原胞总磁矩,是一个稳定的半金属铁磁体.此外,我们的研究也表明RKKY型间接交换和d电子杂化在决定合金磁性质中起决定性作用.     

Fabrication of rhenium Josephson junctions

Rhenium is a superconductor with a relatively weak tendency to oxidize, which is advantageous in superconducting quantum circuit and qubit applications. In this work, Re/A1-A1Ox/Re Josephson tunnel junctions were fabricated using a selective film-etching process similar to that developed in Nb trilayer technology. The Re films had a superconducting transition temperature of 4.8 K and a transition width of 0.2 K. The junctions were found to be highly reproducible using the fabrication process and their characteristics had good quality with a low leakage current and showed a superconducting gap of 0.55 meV.     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.     

High-mobility two-dimensional electron gases at oxide interfaces： Origin and opportunities

Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas(2DEG)at oxide interfaces.Due to the presence of oxygen vacancies at the SrTiO3surface,metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3has Al,Ti,Zr,or Hf elements at the B sites.Furthermore,relying on interface-stabilized oxygen vacancies,we have created a new type of 2DEG at the heterointerface between SrTiO3and a spinelγ-Al2O3epitaxial film with compatible oxygen ion sublattices.This 2DEG exhibits an electron mobility exceeding 100000 cm2·V 1·s 1,more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces.Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.     

Progress in superconducting qubits from the perspective of coherence and readout

Superconducting qubits are Josephson junction-based circuits that exhibit macroscopic quantum behavior and can be manipulated as artificial atoms.Benefiting from the well-developed technology of microfabrication and microwave engineering,superconducting qubits have great advantages in design flexibility,controllability,and scalability.Over the past decade,there has been rapid progress in the field,which greatly improved our understanding of qubit decoherence and circuit optimization.The single-qubit coherence time has been steadily raised to the order of 10 to 100μs,allowing for the demonstration of high-fidelity gate operations and measurement-based feedback control.Here we review recent progress in the coherence and readout of superconducting qubits.     

面外应变对1-3型垂直异质P(VDF-TrFE)基复合薄膜电热性能的调控

考虑1-3型垂直异质铁电P（VDF-TrFE）基复合薄膜结构,利用非线性的热力学理论分析和讨论了平面外应变对复合薄膜电热性能的调控作用. 结果表明,在施加的垂直电场下,平面外应变可以有效地调控电极化、热释电系数、绝热温差等铁电、电热性能. 通过合理的调控平面外应变可以在很大的温度区域范围内获得比纯平面外延薄膜结构更高的绝热温差. 研究结果预示着垂直异质P（VDF-TrFE）基复合薄膜结构在一定的工作温度范围内具有优异的电热性能,在微电源、光通信二极管、红外传感器等微型元件方面有着广泛的应用前景. 关键词： 电热效应 平面外应变 P(VDF-TrFE)复合薄膜 绝热温差     

ZnO纳米棒／MEH-PPV异质结的复合电致隧穿发光

利用低温水热法生长的ZnO纳米棒（ZnO-NRs）,和p型有机半导体材料聚[2-甲氧基-5-（2-乙基己氧基）-1,4-苯撑乙烯撑]（MEH-PPV）复合制备了结构为“ITO/ZnO晶种/ZnO-NRs/MEH-PPV/Al”的发光器件。测试结果发现,该器件具有非常好的二极管整流特性。对ZnO-NRs/M EH-PPV异质结施加超过17 V的反向偏压时,可同时获得两种半导体材料的发光,且ZnO近紫外光（380 nm ）发射强度远大于 M EH-PPV的红橙光强度,发光功率随着反向偏压的增加迅速增强,然而施加正向偏压时未探测到发光。该器件的发光机理不同于其他文献报道的正偏压发光,而属于反偏压发光器件,其发光机理归因于有机无机复合异质结的界面特殊性和ZnO-NRs的纳米尺寸效应,反偏压下器件实现的是载流子隧穿发光,而正偏压时载流子以表面态的无辐射复合及漏电流方式消耗。     

Strong perpendicular magnetic anisotropy in Co2FeAl0.5Si0.5 film sandwiched by MgO layers

Co2FeAl0.5Si0.5 (CFAS)-based multilayers sandwiched by MgO layers have been deposited and annealed at different temperatures. Perpendicular magnetic anisotropy (PMA) with the magnetic anisotropy energy density Ku ≈2.5×106 erg/cm3 (1 erg = 10-7 J) and the coercivity Hc = 363 Oe (1 Oe = 79.9775 A · m-1) has been achieved in the Si/SiO2/MgO (1.5 nm)/CFAS (2.5 nm)/MgO (0.8 nm)/Pt (5 nm) film annealed at 300 ℃. The strong PMA is mainly due to the top MgO layer. The structure can be used as top magnetic electrodes in half-metallic perpendicular magnetic tunnel junctions.