New feature in the Auger peak of adsorbed oxygen

Recent joint theoretical and experimental investigations of Auger core-core-valence spectra of alkali adatoms on simple metals have revealed that such technique is capable to ascertain contributions from different adsorption environments in the signal [M.I. Trioni, S. Caravati, G.P. Brivio, L. Floreano, F. Bruno, A. Morgante, Phys. Rev. Lett. 93 (2004) 206802]. Consequently, to verify if such an effect is present also for other chemical species, we study theoretically the KLV transition of oxygen either as a bulk impurity or as an adsorbate in/on Al and Ag (jellium-like). We make use of the Fermi golden rule in which the matrix elements of the interaction are calculated within DFT. We verify that the relevant physical quantity of this phenomenon is the excited local density of states (LDOS), calculated within a region centered on the core ionized atom. The Auger rate for oxygen in Ag bulk displays a single asymmetric peak, while for adsorbed oxygen a second smaller feature at lower energies, and very close to the first one, appears. This unexpected result follows from the removal of the degeneracy of the m quantum number of the 2p states of oxygen at the surface. It is only displayed on the electronically less dense metal (Ag), but not on Al.     

K＋－SrO－La_2O_3／ZnO催化剂上甲烷氧化偶联反应Ⅰ．催化活性和反应气中添加CO_2的影响

Ｋ＋┐ＳｒＯ┐Ｌａ２Ｏ３／ＺｎＯ催化剂上甲烷氧化偶联反应＊Ⅰ．催化活性和反应气中添加ＣＯ２的影响余林徐奕德＊＊郭燮贤（中国科学院大连化学物理研究所催化基础国家重点实验室，大连１１６０２３）关键词钾离子，氧化锶，氧化镧，氧化锌，金属氧化物催化剂，甲烷，...     

Behavior of zirconium in the ZrOW(100) system at high temperature, studied by ISS, AES and work-function measurements

The behavior of zirconium atoms at the W(100) surface associated with oxygen adsorption at different sample temperatures has been studied by Auger electron spectroscopy (AES), ion scattering spectroscopy (ISS), and the relative change of the work function (Δф) measured by the onset of the secondary electron energy distribution. The results have revealed: (i) adsorption of zirconium onto the W(100) surface followed by the elevation of the sample temperature up to 1710 K in an oxygen partial pressure of 2.7 × 10⁻⁴ induces complete diffusion of zirconium atoms into the W(100) substrate; (ii) further exposure of oxygen induces co-existence of oxygen and tungsten on the surface at 1710 K, resulting in a work function of 4.37 eV; (iii) keeping the sample temperature at 1710 K, simple evacuation of the system has resulted in surface segregation of zirconium atoms to the surface to form a zirconium atomic layer on the top-most surface, reducing the work function to 2.7 eV. The results have revealed that this specific behavior of zirconium atoms at high temperature assures, with very good reproducibility, the highly stable performance and long service life of Zr---O/W(100)-emitters in practical use, even in a low vacuum of 10⁻⁶ Pa.     

ICTS measurements for p-GaN Schottky contacts

High-temperature isothermal capacitance transient spectroscopy (H-ICTS) measurements were conducted to characterize near mid-gap defects, which are the origin of the memory effect in Ni/p-GaN Schottky contacts. A large single peak was detected only under the forward bias conditions. This indicates that the defects were located in the vicinity of the interface. The change of the peak height and position of the ICTS curves under various bias conditions were qualitatively interpreted by the distribution of the defects and the current flow effect.     

The growth of Pd thin films on a 6H-SiC(0 0 0 1) substrate

Pd thin films, grown on Si-rich 6H-SiC(0 0 0 1) substrates, were studied by atomic force microscopy, electron diffraction and high-resolution transmission electron microscopy. It is concluded that the growth is successful only when all the growth process takes place at room temperature. Under these conditions a very good epitaxial growth of Pd is achieved, despite the large misfit (about 8.6%) between Pd and the substrate and the existence of a semi-amorphous layer between the thin film and the substrate. A large number of twins appear in these films.     

高纯金属镨中痕量稀土杂质的电感耦合等离子体原子发射光谱分析及光谱干扰的校正

本文提出了PGS-2型平面光栅光谱仪(色散率0.18纳米,二级光谱)与PlasmaTherm ICP-5000D射频发生器联用,乙醇预去溶方式进样,同时直接测定高纯金属镨中5个痕量稀土杂质元素的方法。并讨论了基体浓度对检出限的影响以及光谱干扰及其校正方法。当样品溶液中镨的浓度为5毫克/毫升时,测定下限分别为镧、钕和钐0.002%,铈0.003%和钇0.0005%。获得了良好的实验结果,其相对标准偏差为1.2-6.2%。     

RE3Ga9Ge (RE=Y, Ce, Sm, Gd and Yb): compounds with an open three-dimensional polygallide framework synthesized from liquid gallium

The RE₃Ga₉Ge compounds (RE=Y, Ce, Sm, Gd and Yb) were synthesized at 850°C in quantitative yield from reactions containing excess liquid Ga. The orthorhombic crystal structure is characterized by a unique three-dimensional open Ga framework with parallel straight tunnels. In the tunnels, inserted are arrays of the RE atoms together with interpenetrated monoatomic RE-Ga-Ge planes. A complex disordered arrangement of the RE and Ga atoms is observed in the monoatomic plane. Depending on the extent of disorder, the crystal structure could be presented either in a sub-cell (no ordering) or in a super-cell (partial ordering). Single-crystal X-ray data for Ce₃Ga₉Ge sub-structure: space group Immm, Z=2, cell parameters a=4.3400(12) Å; b=10.836(3) Å; and c=11.545(3) Å; super-structure: space group Cmma, Z=8, cell parameters a=8.680(3) Å; b=23.090(7) Å; and c=10.836(3) Å. The refinement based on the full-matrix least squares on F_o²[I>2σ(I)] converged to final residuals R₁/wR₂=0.0226/0.0528 and 0.0729/0.1569 for the sub- and super-structures, respectively. The relationship between the disordered sub-structure and partially ordered super-structure is discussed. Magnetic susceptibility measurements show Curie-Weiss behavior at the temperatures above 30 K with the negative Weiss constants Θ=−49(1) and−7.7 K for Gd and Ce analogs, respectively. An antiferromagnetic transition is observed in the Gd analog at T_N=26.1 K. The μ_eff obtained for both analogs is close to the RE³⁺ free-ion value.     

Nanowire‐Based Electrochemical Biosensors

We review recent advances in biosensors based on one‐dimensional (1‐D) nanostructure field‐effect transistors (FET). Specifically, we address the fabrication, functionalization, assembly/alignment and sensing applications of FET based on carbon nanotubes, silicon nanowires and conducting polymer nanowires. The advantages and disadvantages of various fabrication, functionalization, and assembling procedures of these nanosensors are reviewed and discussed. We evaluate how they have been used for detection of various biological molecules and how such devices have enabled the achievement of high sensitivity and selectivity with low detection limits. Finally, we conclude by highlighting some of the challenges researchers face in the 1‐D nanostructures research arena and also predict the direction toward which future research in this area might be directed.     

The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate has been studied. The pyronine-B has been sublimed on the top of p-Si surface. The barrier height and ideality factor values of 0.79±0.04 and 1.13±0.06 eV for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. From the low capacitance-frequency (C-f) characteristics as well as conductance-frequency (G-f) characteristics, the energy distribution of the interface states and their relaxation time have been determined in the energy range of (0.53−E_v)-(0.79−E_v) eV taking into account the forward bias I-V data. The interface state density N_ss ranges from 4.93×10¹⁰ cm⁻² eV⁻¹ in (0.79−E_v) eV to 3.67×10¹³ cm⁻² eV⁻¹ in (0.53−E_v) eV. Furthermore, the relaxation ranges from 3.80×10⁻³ s in (0.53−E_v) eV to 4.21×10⁻⁴ s in (0.79−E_v) eV. It has been seen that the interface state density has an exponential rise with bias from the midgap towards the top of the valence band. The relaxation time shows a slow exponential rise with bias from the top of the valence band towards the midgap.     

Short Te …︁ Te bonding contacts in a new layered ternary telluride: Synthesis and crystal structure of 2D Nb3GexTe6 (x ≃ 0.9)

The new layered ternary compound Nb₃Ge_xTe₆ (x ? 0.90) was prepared by direct combination of the elements taken in the stoichiometric proportions 3 : 1 : 6, heated at 1 000 °C for 10 days in silica tubes and quenched to room temperature. The phase crystallizes in the orthorhombic symmetry, space group Pnma (#62), with the following single crystal refined parameters: a = 643.18(5) pm, b = 1391.98(11)pm and c = 1 154.07(5) pm, with Z = 4. The structure was refined to an R of 3.4% (R_w = 4.6%), with 1969 independent reflexions and 49 parameters. The structure is based on the close stacking of trigonal prismatic (TP) slabs in the AA/BB mode. The slabs can be seen as built up from face sharing biprisms, which are filled either by one or by two niobium cations situated in the middle of the trigonal prisms. The germanium is located in the middle of the common face of two prisms, leading to a rather unusual anionic square coordination. The refinements showed that this latter cation does not fill completely its square site. No cation was found in the van der Waals gap between the slabs. The mean d_{Ge? Te} distance (276.5 pm) is in agreement with Ge^II cations, while some Te …? Te distances (from 333.84 to 361.65pm) are too short for anions in a simple contact. These bonding distances, already mentionned in some MTe₂ compounds, are to be ascribed to charge transfer in the structure, with a partial oxidation state for the tellurium anions. Short Nb? Nb and Nb? Ge distances (292.0 and 281.3 pm, respectively) imply intercationic bonding within the slabs.