Apparatus for High-Resolution Solid Hydrogen Matrix Isolation Spectroscopy and Its Application

Apparatus integrating a Fourier transform-infrared (FT-IR) spectrometer and a mid-infrared difference frequency generation (DFG) laser spectrometer was built for the study of the matrix isolation spectrum in solid molecular hydrogen. A 3-cm-long molecular hydrogen crystal was grown in a liquid-helium Dewar, and its infrared absorption spectrum in the 1-5 μm region was recorded to test the system. The W₀(0) (ν=0←0, J=6←0) line around 2410 cm⁻¹ of solid hydrogen was investigated with the DFG laser spectroscopy. High-resolution matrix isolation spectrum of CO² co-deposited with hydrogen on a BaF₂ cold plate at liquid-helium temperature was studied.     

Precise measurement of hyperfine structure in the state of Rb

We demonstrate a technique to measure hyperfine structure using a frequency-stabilized diode laser and an acousto-optic modulator locked to the frequency difference between two hyperfine peaks. We use this technique to measure hyperfine intervals in the 5 P _3/2 state of ⁸⁵Rb and obtain a precision of 20 kHz. We extract values for the magnetic-dipole coupling constant A = 25.038(5) MHz and the electric-quadrupole coupling constant B = 26.011(22) MHz. These values are a significant improvement over previous results. Received 6 March 2003 Published online 15 April 2003     

Does phenazine form triplet excimer and dimer anion radical?

Laser flash photolysis of phenazine (PZ) solution reveals the existence of a stable species with a long lifetime at 380 nm in addition to the usual triplet PZ at 440 nm. The former is suggested to be due to formation of triplet PZ excimer. The triplet excimer also undergoes photoinduced electron transfer with some aromatic amines. The formation of PZ dimer anion radical and amine cation radicals are confirmed by external magnetic field effect studies. Measurement of B_1/2, which estimates hyperfine present in the system, also supports this assignment.     

Quantitative measurements of Ge surface segregation during SiGe alloy growth

Ge segregation during the growth of Si_{1 − x}Ge_x alloys (x = 5, 10, 20, and 40%) was studied using X-ray photoelectron spectroscopy. The alloys were grown in thicknesses up to 20.0 nm at 500°C to measure quantitatively the amount of segregated surface Ge. The length of alloy needed to reach steady-state growth edge was found to decrease with increasing alloy concentration (4.8, 2.8, 2.4, and 2.0 nm, respectively). It was found that each alloy had a complete monolayer of Ge on the surface and an increasing amount of segregated Ge in the second layer (20, 55, 80, and 95%, respectively) during steady-state growth. An increase in the temperature of alloy growth (400–750°C) resulted in an increase in the leading edge of alloy growth but did not change the amount of segregated Ge during steady-state growth. We propose that film stress is responsible for the amount of Ge segregation.     

闪光灯泵浦的Nd:KGd(WO4)2激光器

报道了用闪光灯泵浦的掺钕的钨酸钆镓(Nd³⁺:KGd(WO₄)₂激光器.在重复频率1Hz,脉宽120μs的灯泵下,测量了不同透过率下激光输出能量,获得最大输出能量384mJ,斜率效率1.0%,外推阈值0.54J.在调Q运行时,Nd:KGW晶体的斜率效率为0.16%,最大输出能量46mJ.     

表面垂直裂痕诱发瑞利波散射的数值分析

激光激发的声表面波为材料表面缺陷的检测提供了有力的工具.针对含缺陷材料在模型边界上的复杂性,建立了基于平面应变的有限元模型并选取了相同厚度但含有不同深度的表面裂痕的单层铝板进行了对比计算,得到了声表面波经过不同深度的表面裂痕时产生的反射及透射信号波形的时域特征.进而引入了基于Wigner-Ville分布理论的时-频分析方法计算裂痕前、后散射的瞬态表面波的能量在时间-频率平面内分布的情形.结果显示：声表面波接近中心频率的某一频率成分在经过深度小于其中心波长的表面缺陷时,随着裂痕深度的增加,对应于该频率的反射系数呈现单调递增的趋势;而透射系数呈现递减的特征,这一结果可以为激光超声检测表面缺陷提供一种定量的表征手段.     

可用于激光核聚变的闪烁中子探测器

在当前激光核聚变实验中,中子集中在短时间内出现、且产额低。为适应这种特点,要求探测器的效率高,分辨时间短。利用闪烁中子探测器探测激光核聚变所产生的中子,能测定中子产额,记录中子能量,而且探测效率高,分辨时间短。缺点是易受γ射线、X射线的干扰。     

Rebuilding of metal components with laser cladding forming

Laser cladding forming (LCF) is a novel powerful tool for the repairing of metal components. Rebuilding of V-grooves on medium carbon steel substrates has been carried out with laser cladding forming technique using stainless steel powder as the cladding material. Microstructure of the deposited layers has been characterized using optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDAX), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). Mechanical properties of the rebuilt V-groove samples have been evaluated by tensile and impacting tests and microhardness measurement. Experimental results show that good fusion bonding between the rebuilt layers and the substrate has been formed, and the microstructure of the cladding layers is mainly composed of fine, dense and defect-free epitaxial columnar dendrites. Due to the effect of grain size refinement, the tensile strength, impacting toughness, elongation and microhardness of the rebuilt samples have been greatly enhanced compared to those of the substrate. Microhardness is also very uniform throughout the rebuilt regions. With the growth of the deposited layers, the microhardness increases gradually. The good ductility of the deposited regions is verified by the SEM fracture analysis.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

Matrix assisted pulsed laser evaporation processing of triacetate-pullulan polysaccharide thin films for drug delivery systems

We report the first successful deposition of triacetate-pullulan polysaccharide thin films by matrix assisted pulsed laser evaporation. We used a KrF* excimer laser source (λ = 248 nm, τ ≈ 20 ns) operated at a repetition rate of 10 Hz. We demonstrated by FTIR that our thin films are composed of triacetate-pullulan maintaining its chemical structure and functionality. The dependence on incident laser fluence of the induced surface morphology is analysed.