A Necklace of Wulff Shapes

In a probabilistic model of a film over a disordered substrate, Monte-Carlo simulations show that the film hangs from peaks of the substrate. The film profile is well approximated by a necklace of Wulff shapes. Such a necklace can be obtained as the infimum of a collection of Wulff shapes resting on the substrate. When the random substrate is given by iid heights with exponential distribution, we prove estimates on the probability density of the resulting peaks, at small density.AMS subject classification: 60K35, 60K37, 82B24, 82B41     

Electronic quasiparticles and evolution of Fermi level spin states in thin magnetic layers

Here we report on high-resolution photoemission of iron layers grown on a W(1 1 0) substrate. The evolution of the substrate states upon sub-monolayer adsorption of Fe atoms leads to a shift in surface state binding energy. For thicker (1 1 0) films, sharp metallic surface states are obtained. Their dispersion displays the signature of quasiparticle renormalization due to dressing with excitations. The energy scale is characteristic for the spin wave spectrum in iron, thereby giving evidence of electron-magnon coupling. Furthermore, it is found that quantum well states occur as a function of layer thickness. These modify the spin density of states at the Fermi level in the ferromagnetic film.     

A stationary population model with an interior interface-type boundary

We propose a stationary system that might be regarded as a migration model of some population abandoning their original place of abode and becoming part of another population, once they reach the interface boundary. To do so, we show a model where each population follows a logistic equation in their own environment while assuming spatial heterogeneities. Moreover, both populations are coupled through the common boundary, which acts as a permeable membrane on which their flow moves in and out. The main goal we face in this work will be to describe the precise interplay between the stationary solutions with respect to the parameters involved in the problem, in particular the growth rate of the populations and the coupling parameter involved on the boundary where the interchange of flux is taking place.     

Molecular switching on surfaces

Molecular switching has established itself as a key functionality of building blocks developed for addressable materials and surfaces over the last two decades. Many challenges in their use and characterisation have been presented by the wide variation in interfaces studied, these ranging from truly single-molecule devices to two-dimensional self-assembled monolayers and thin films that bridge the gap between surface and macroscopically bulk materials (polymers, MOFs, COFs), and further still to other interfaces (solid–liquid, liquid–air, etc.). The low number density of molecules on monolayer-coated interfaces as well as in thin films, for example, presents substantial challenges in the characterisation of the composition of modified interfaces. The switching of molecular structure with external stimuli such as light and electrode potential adds a further layer of complexity in the characterisation of function. Such characterisation “in action” is necessary to correlate macroscopic phenomena with changes in molecular structure. In this review, key classes of molecular switches that have been applied frequently to interfaces will be discussed in the context of the techniques and approaches used for their operando characterisation. In particular, we will address issues surrounding the non-innocence of otherwise information-rich techniques and show how model – non-switching – compounds are often helpful in confirming and understanding the limitations and quirks of specific techniques.     

Hexagonal AlN films grown on nominal and off-axis Si(0 0 1) substrates

Nucleation and growth of wurtzite AlN layers on nominal and off-axis Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy is reported. The nucleation and the growth dynamics have been studied in situ by reflection high-energy electron diffraction. For the films grown on the nominal Si(0 0 1) surface, cross-sectional transmission electron microscopy and X-ray diffraction investigations revealed a two-domain film structure (AlN¹ and AlN²) with an epitaxial orientation relationship of [0 0 0 1]_AlN || [0 0 1]_Si and AlN¹ || AlN² || [1 1 0]_Si. The epitaxial growth of single crystalline wurtzite AlN thin films has been achieved on off-axis Si(0 0 1) substrates with an epitaxial orientation relationship of [0 0 0 1]_AlN parallel to the surface normal and 0 1 1 0_AlN || [1 1 0]_Si.     

Recent Progress in High-Performance Lithium Sulfur Batteries: The Emerging Strategies for Advanced Separators/Electrolytes Based on Nanomaterials and Corresponding Interfaces

Lithium-sulfur (Li−S) batteries, possessing excellent theoretical capacities, low cost and nontoxicity, are one of the most promising energy storage battery systems. However, poor conductivity of elemental S and the “shuttle effect” of lithium polysulfides hinder the commercialization of Li−S batteries. These problems are closely related to the interface problems between the cathodes, separators/electrolytes and anodes. The review focuses on interface issues for advanced separators/electrolytes based on nanomaterials in Li−S batteries. In the liquid electrolyte systems, electrolytes/separators and electrodes system can be decorated by nano materials coating for separators and electrospinning nanofiber separators. And, interface of anodes and electrolytes/separators can be modified by nano surface coating, nano composite metal lithium and lithium nano alloy, while the interface between cathodes and electrolytes/separators is designed by nano metal sulfide, nanocarbon-based and other nano materials. In all solid-state electrolyte systems, the focus is to increase the ionic conductivity of the solid electrolytes and reduce the resistance in the cathode/polymer electrolyte and Li/electrolyte interfaces through using nanomaterials. The basic mechanism of these interface problems and the corresponding electrochemical performance are discussed. Based on the most critical factors of the interfaces, we provide some insights on nanomaterials in high-performance liquid or state Li−S batteries in the future.     

Active role of buried ultrathin oxide layers in adsorption of O2 on Au films

Ultrathin oxide layers can exhibit special behavior by enabling the coupling of structural distortions and charge transfer beyond that allowed in the bulk. In this work, we show from first-principles calculations that ultrathin layers of titania, a prototypical oxide, are active in stabilizing adsorption of O₂ on Au overlayers. The adsorbed O₂ molecules induce charge redistribution in Au that penetrates to the Au-titania interface, which responds through structural distortions that lower the total energy of the system. We suggest that this effect may be of more general nature and useful in catalysis.     

Focusing of electromagnetic waves into a uniaxial crystal

We derive integral representations suitable for studying the focusing of electromagnetic waves through a plane interface into a uniaxial crystal. To that end we start from existing exact solutions for the transmitted fields due to an arbitrary three-dimensional (3D) wave that is incident upon a plane interface separating two uniaxial crystals with arbitrary orientation of the optical axis in each medium. Then we specialize to the case in which the medium of the incident wave is isotropic and derive explicit expressions for the dyadic Green's functions associated with the transmitted fields as well as integral representations suitable for asymptotic analysis and efficient numerical evaluation. Relevant integral representations for focused 3D electromagnetic waves are also given. Next we consider the special case in which (i) the incident field is a two-dimensional (2D) TM wave and (ii) the optical axis in the crystal lies in the plane of incidence, implying that we have a 2D vectorial problem, and derive dyadic Green's functions, integral representations suitable for asymptotic and numerical treatment, and integral representations for focused TM fields. Numerical results for focused 2D TM fields based on these integral representations as well as corresponding experimental results will be presented in forthcoming papers.     

Method for independent control of particle size and distance in rhodium epitaxy on TiO2(110)-(1×2) surface An STM study

A method for independent control of the particle size and distance is presented for rhodium epitaxy on TiO₂(110)-(1×2) surface. The real space imaging of the surface morphology was performed by scanning tunneling microscopy. The amount of the deposited rhodium was checked by Auger electron spectrometry. The method consists of two steps: (i) evaporation of 0.001–0.050 ML equivalent of rhodium at room temperature with a post-annealing at 1100 K (“seeding”); (ii) post-deposition of rhodium for growing of the Rh nanoparticles formed in step (i) (“growing”). The mechanism of this procedure is based on the large difference of the surface diffusion coefficient between Rh adatoms and Rh nanocrystallites larger than 1–2 nm. In the first step the average distance between the metal particles is controlled in the range 5–200 nm, the second step determines the particles size (2–50 nm). This work demonstrates that the diffusion processes of metal nanoparticles of different sizes and the growing modes of the crystallites can be studied in detail by application of seeded surfaces.     

Interface delocalization in the three-dimensional Ising model

The interface delocalization in the three-dimensional Ising model is studied by real-space renormalization group methods. The first-order cumulant expansion approximation is used. Defect free energies for a boundary plane of defects and an internal plane of defects are calculated in the whole temperature region. The phase diagrams are also obtained. The method and the model analyzed may give a correct phase diagram only in the regime of continuous interface delocalization. The interface delocalization is obtained for the boundary defect and also for the internal defect if the systems on two sides of the internal defect plane have a different degree of order. The delocalization transition does not occur in the case of the internal defect plane between two equally ordered systems.