Thermodynamic and structural analysis of the Pb–InSb system

Results of thermodynamic and structural analysis of the Pb–InSb system are presented in this paper. Thermodynamic investigations were performed experimentally by Oelsen’s calorimetric method and calculated by thermodynamic predicting according to Chou’s general solution model, while structural analysis of the alloys in Pb–In–Sb system was done by SEM–EDX and diffractometry.     

气体中蒸发法制备InSb纳米颗粒

用气体中蒸发的方法在蓝宝石基片上制备了纳米InSb颗粒膜．通过透射电镜分析显示，该方法可以制得多晶的InSb纳米颗粒，且颗粒均匀地分布在蓝宝石基片表面上；用X射线能谱仪分析样品得到两种元素的百分比接近1：1．实验结果表明，通过改变设备的工作条件，可以得到具有不同颗粒尺寸的InSb纳米颗粒．     

基于锑化铟亚波长阵列结构的太赫兹聚焦器件

基于锑化铟材料在太赫兹波段的横向磁光效应,提出了一种金属-空气-锑化铟-金属非对称周期性亚波长线栅阵列结构的表面等离子体器件,研究了外加磁场和温度对不同频率透射波聚焦特性的影响.结果表明,在外加磁场强度B=0.6 T、温度T=172 K时,可实现0.8 THz透射光束的聚焦,焦点处能流密度透过率比没有外加磁场时增强28倍.对于不同频率入射波,通过主动调节磁场强度和温度,能实现从0.4—0.8 THz宽频带的聚焦,而且焦点处的透过率相比于无外加磁场时的普通狭缝聚焦透过率增强20倍以上,该器件是太赫兹波段理想的可调谐、宽频段、高透过率的聚焦器件.     

激光辐照InSb(PV)型探测器的热损伤

 在建立高斯型连续激光辐照InSb(PV)型探测器物理模型的基础上,采用近似解析解的形式计算了圆柱形InSb靶板的2维温度场。通过数值分析得出了在激光辐照时,InSb(PV)型探测器的温升与时间的关系,并计算出相应的损伤阈值。研究表明：在强激光连续辐照下,半导体材料InSb会发生熔融损伤,且最早发生于迎光面的光斑中心,激光的功率密度越高,造成破坏所需要的时间越短;对于一定厚度胶层的InSb(PV)型探测器,只有强度大于一定阈值的连续激光辐照才可能发生熔融损伤,越薄的胶层对应的损伤阈值越大。为了增加InSb(PV)型探测器抗激光辐照能力,应该减小胶层厚度。采用该理论计算得到不同功率下的InSb熔融时间为1.57 s和4.54 s,与实验得到的2 s和 4~5 s基本吻合。     

基于相关光子多模式相关性的InSb模拟探测器定标方法

利用基于参量下转换产生的相关光子可以实现“无溯源”的绝对定标. 将该方法推广应用于模拟探测器定标的过程中, 获取两路模拟光电流信号的有效相关信息是主要难点. 在相关光子的多模式相关性理论模型的基础上, 提出了一种新的光电流处理方案. 通过将某一时刻采集到的光电流所包含的电荷量转换为等效光子计数, 采用双光路平衡探测和双通道数据波动校正的技术思路, 开展了红外模拟探测器量子效率定标验证实验研究. 利用532 nm单波长激光器为抽运源、PPLN晶体为非线性晶体, 在25 ℃工作温度下获取了631和3390 nm的相关光子对, 定标了InSb红外模拟探测器在3390 nm处的绝对功率响应度. 结果表明, 对InSb模拟探测器的合成不确定度为7.785%. 根据量子效率与绝对功率响应度之间的函数关系, 定标结果与国内计量单位的校准结果的相对偏差为3.6%. 利用多模式相关性在模拟信号下实现红外模拟探测器的绝对功率响应度定标在国际上暂无此方面的报道, 该方法验证了应用多模式相关性理论开展模拟探测器定标方法的可行性, 对于探索基于相关光子的定标技术和拓宽辐射定标应用领域具有重要意义.     

Ballistic transport and quantum interference in InSb nanowire devices

An experimental realization of a ballistic superconductor proximitized semiconductor nanowire device is a necessary step towards engineering topological quantum electronics. Here, we report on ballistic transport in In Sb nanowires grown by molecular-beam epitaxy contacted by superconductor electrodes. At an elevated temperature, clear conductance plateaus are observed at zero magnetic field and in agreement with calculations based on the Landauer formula. At lower temperature, we have observed characteristic Fabry–Pérot patterns which confirm the ballistic nature of charge transport.Furthermore, the magnetoconductance measurements in the ballistic regime reveal a periodic variation related to the Fabry–Pérot oscillations. The result can be reasonably explained by taking into account the impact of magnetic field on the phase of ballistic electron's wave function, which is further verified by our simulation. Our results pave the way for better understanding of the quantum interference effects on the transport properties of In Sb nanowires in the ballistic regime as well as developing of novel device for topological quantum computations.     

Warping of the bulk dispersion of InSb

We calculate the warping of the bulk dispersion of InSb in thek-space using different models for the bulk band structure near the Γ point. It is shown that the dispersion of the conduction band Γ₆ is well described by the simplified six-band model, while the fourteen-band model is more accurate for the valence bands.     

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

Photodiodes of InSb were fabricated on an epitaxial layer grown using molecular beam epitaxy (MBE). Thermal cleaning of the InSb (0 0 1) substrate surface, 2° towards the (1 1 1) B plane, was performed to remove the oxide. Photodiode properties of МВЕ-formed epitaxial InSb were demonstrated. Zero-bias resistance area product (R₀A) measurements were taken at 80 K under room temperature background for a pixel size of 100 μm × 100 μm. Values were as high as 4.36 × 10⁴ Ω/cm², and the average value of R₀A was 1.66 × 10⁴ Ω/cm². The peak response was 2.44 (A/W). The epitaxial InSb photodiodes were fabricated using the same process as bulk crystal InSb diodes with the exception of the junction formation method. These values are comparable to the properties of bulk crystal InSb photodiodes.     

In掺杂对n型方钴矿化合物的微结构及热电性能的影响规律

用熔融退火法结合放电等离子烧结(SPS)技术成功制备了具有不同 In含量的In_xCo₄Sb₁₂(x=0.1—0.4)方钴矿化合物.X射线衍射分析和扫描电镜分析结果表明,当In的掺杂量超过一定值时,化合物中会原位析出纳米InSb的第二相,且其含量会随In掺杂量的增加而增大.研究结果表明,InSb第二相的存在增大了化合物的功率因子,降低了化合物的晶格热导率,显著提高了化合物的热电性能.在温度为800 K时,In相似文献