高光谱成像的机采籽棉杂质分类检测

机采籽棉杂质分类检测为调整棉花清理机械加工参数和工序提供参考依据,对提升皮棉品质具有重要意义。但由于籽棉棉层分布不均匀,使得图像检测难度增大,使用传统的检测方法无法有效检测各类杂质。采用高光谱成像方法对机采籽棉中的棉叶、棉枝、地膜和铃壳（内外）五种杂质进行分类判别检测。首先采集120个机采籽棉样本的高光谱图像,选取感兴趣区域获取平均光谱曲线。发现由于物质构成的差异,不同杂质体现出不同的吸收和反射特性,不同种类物质之间的光谱差异大于同类物质。对提取的平均光谱曲线进行主成分分析（PCA）,结果显示棉花、残膜和铃壳外与其他三类相比,有较好的聚集性和可分性,但是棉叶、铃壳内和棉枝三类相互叠加在一起,空间分布存在严重交叉重叠。以提取的平均光谱曲线为训练样本,选择线性判别分析（LDA）、支持向量机（SVM）和神经网络（ANN）三种分类判别算法,对算法参数进行寻优,并建立机采籽棉杂质分类判别模型。其中,经过LDA模型降维后的样本空间较PCA表现出了更好的聚集性和可分性,采用正则化防止过拟合,得到训练集准确率为86.4%,测试集准确率为86.2%;SVM模型的参数寻优结果为C=105,g=0.1,其训练集准确率为83.42%,测试集准确率为83.40%;ANN模型参数寻优得到隐含层数和神经元个数分别为2和17,训练集准确率为82.9%,测试集准确率为81.8%。对三种模型的分类效果和检测用时进行比较,LDA模型结果最优。通过对高光谱图像进行像素等级分类判别,结果显示棉花识别效果较好,植物性杂质都被有效检测,但是地膜和棉花存在误识别,分类效果与杂质光谱的分类判别模型结果一致。因此,采用高光谱成像技术可以快速、无损的检测和识别籽棉杂质,为棉花加工装备提供反馈参数,对棉花加工机械化和智能化有重要意义。     

Strain field due to point defects in Ni dilute alloys

We report the results for strain field due to substitutional transition metal impurities in Ni. The Kanzaki lattice static method has been used to calculate the strain field, the effective ion-ion interaction potential due to Wills and Harrison is used to calculate dynamical matrix with first nearest neighbour and the impurity-induced force with second nearest neighbour. The results for 3d, 4d and 5d impurities (Fe, Co, Cu, Nb, Mo, Pd, Pt and Au) are compared with the experimental data, which are found in agreement.     

头孢西丁钠有关物质的测定

用苯基硅烷键合硅胶为填充剂的色谱柱,流动相A为水（用甲酸调节pH2.7）,流动相B为乙腈;线性梯度洗脱,高效液相色谱法测定头孢西丁钠中的有关物质。本法专属性良好。     

高纯氧化钆中14种稀土杂质元素的柱色谱分离ICP-AES法测定

用Ｐ５０７萃淋树脂柱色谱法分离高纯氧化钆基体与稀土杂质。用ＩＣＰ－ＡＥＳ法测定高纯氧化钆中微量稀土杂质。选择了柱色谱分离的合适条件。优化了仪器测定参数。使本方法测定稀土总量下限小于１×１０－５％。可以满足９９．９９９９％高纯氧化钆的测定。此方法回收率在８５％－１１０％之间。相对标准偏差小于１８％。     

Modifications of He implantation induced cavities in silicon by MeV silicon implantation

Doppler broadening spectroscopy (DBS) coupled to a slow positron beam has been used to investigate the formation of He-cavities in the presence of high vacancy concentrations in Cz-Si (1 1 1). Si samples were first implanted with MeV Si ions in order to create a damaged Si layer. DBS measurements show the presence of divacancy (SV₂/SSi lattice=1.052,WV₂/WSi lattice=0.83) from the surface up to 4.2 μm depth with a concentration higher than 10¹⁸ cm⁻³. The thickness of this damaged layer was confirmed by spreading resistance measurements. In the second step, samples were implanted with 50 keV ³He with fluence of 10¹⁶ cm⁻². DBS results show that the apparent divancancy concentration decreases at ³He implantation depth ∼435 nm due to ³He passivation of vacancies that occurs during the implantation process. After 900 °C annealing, large defects are detected at depth up to 2 μm and (S, W) values suggest the detection of cavities at the implantation depth. We also report the possible presence of impurity complexes. The formation of these complexes is attributed to the gettering of metallic impurities present in the Si sample.     

ICP—AES法测定高纯二氧化锆中痕量杂质

介绍了高纯二氧化锆中痕量杂质元素Ｆｅ，Ｎａ，Ｓｉ，Ｔｉ的ＩＣＰ－ＡＥＳ测定方法。样品以浓Ｈ２ＳＯ４及（ＮＨ４）２ＳＯ４溶解，采用空白背景校正法消除基体Ｚｒ的光谱干扰，以基体匹配法补偿基体效应。各元素平均回收率为９５％－１０６％，相对标准偏差为１．３％－３．０％。     

Near- and mid-infrared spectroscopy of sol–gel derived ormosils: vinyl and phenyl silicates

The suitability of ormosils as photonic materials was investigated. Vinyl and phenyl silicates were synthesised below 100°C. A detailed assignment of mid-infrared vibrational absorption bands is given. This allowed assignment of overtone and combination bands in the near-infrared region and an assessment of residual water contamination, which is low and can be expelled by evacuation. These ormosils have low intrinsic and extrinsic optical absorption in the visible spectral region and at useful wavelengths in the near-infrared.     

Non-evidence for Z 1 oscillations of the nuclear ion-atom interaction in an amorphous target

Periodic variations in the Z ₁ dependence of the interatomic potential has recently bevlen revealed by a channeling technique. To search for oscillations of similar kind in a target of randomly arranged atoms we have made systematic measurements on the scattering distributions of energetic (32–56 keV) ions in amorphous carbon. Our technique was to transmit light mass ions through carbon foils with a thickness of 2–4 μg/cm². The atomic number of the ions, Z, ranged from 3 to 18. The scattering distribution of the transmitted particles was recorded. From these curves the angular halfwidth,ψ ^1/2, and the relative intensity at a scattering angle 2.5 times ψ ^1/2 was determined. The experimental values are in good agreement with theoretical calculations based on the Thomas-Fermi and Lenz- Jensen potentials. Furthermore, the saturation value of the mean nuclear stopping cross sections for ions scattered in the straight forward direction with a mean energy of 50 keV are given. No evidence for a Z ₁ oscillatory behaviour could be found in any of the three parameters investigated.     

Further experiments on energy transfer from bom barding ions to Na2O containing glasses

Abstract

The kinetics of short-range atomic ordering in austenitic Fe-17 Cr-xNi (x=10-25 wt%) alloys and in Sc-doped alloys has been studied by residual resistivity measurements during isochronal annealing in the temperature range 300-815 K. Dynamics of residual resistivity variations has shown that (i) diffusion in these alloys is observable at temperature above 700 K, (ii) preliminary cold-work deformation as well as doping by Sc atoms forms the disorder atomic structure in the austenitic matrix. It was found that Sc Atoms retard the atomic ordering process and shift it to higher temperatures. The value of temperature shift is increased from 25 to 80 K when the nickel concentration grows up to 25 wt%.     

Electrical and optical properties of Cd1−xZnxS (0x0.18) grown by chemical bath deposition

Cd_1−xZn_xS films with 0x0.18 were grown by chemical bath deposition technique on glass substrates from an aqueous solution containing cadmium and zinc sulfate, ammonia and thiourea. Microstructural features, obtained from X-ray diffraction and scanning electron microscopy (SEM) measurements, reveal a predominance of Wurtzite structure and an homogenous microstructure formed by densely microcrystallines for all the samples studied. Cd_1−xZn_xS semiconductor was found to be resistive and of n-type. Also, the electron density decreases with increased x and the mobility reaches a maximum around x=0.12. Which means that the Cd_1−xZn_xS films at this composition are of high crystalline quality, i.e. having reduced intrinsic defect concentrations.