Multifractal statistics of multiparticle production at high energies

It is shown that high energy multiparticle production near the morphological phase transition from monofractality to multifractality is characterized by a multifractal Bernoulli distribution. Experimental data on hadron-hadron, hadron-nucleus and on heavy ions collisions are used to show an universal character of this distribution (and, consequently, of the morphological phase transition) in multiparticle production at high energies. Received: 23 July 1998 / Revised version: 25 November 1998     

Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

A systematic p-type doping study has been performed on 4H- and 6H-silicon carbide (SiC) epilayers grown at high growth rate using chloride-based chemical vapor deposition. The effect of temperature, pressure, growth rate, C/Si-, Cl/Si-ratios and dopant flow on the incorporation of the acceptor atoms aluminum and boron has been studied. The C/Si-ratio on the aluminum incorporation has similar behavior to what has been reported for the standard non-chlorinated low growth rate process, while no clear effect of C/Si-ratio was observed for the boron incorporation. A higher Cl/Si-ratio seems to lead to lower the aluminum and boron incorporation either due to more effective silicon supply at high Cl/Si-ratio or due to removal of dopant atoms from the surface by chlorine. The doping concentration is stable to the variations in silicon molar fraction, growth pressure and growth temperature for the aluminum-doped layers. Also p-type doping with gallium was tested.     

Methods for Thickness Determination of SiC Homoepilayers by Using Infrared Reflectance Spectroscopy

Infrared reflectance spectra have been widely used to measure layer thickness based either on calculation or on curve fitting, and two traditional methods for thickness determination have been studied. Considering the disadvantages of those two methods, we propose a new fitting model based on the fitting of the fringe order difference. In comparison with the measured results, the new fitting model shows its superiority not only for its stable and accurate results which have great agreement with the results from SEM, but also for its simple and quick fitting process.     

Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment

Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are investigated. Excellent performances of Al/HfTiO/GeO _x N _y /n-Ge MOS capacitor with wet–NO surface pretreatment have been achieved with a interface-state density of 2.1×10¹¹ eV⁻¹ cm⁻², equivalent oxide charge of −7.67×10¹¹ cm⁻² and gate leakage current density of 4.97×10⁻⁵ A/cm² at V _g =1 V.     

Electric-field-enhanced metal-induced crystallization of hydrogenated amorphous silicon at room temperature

A novel simple method of crystallization of hydrogenated amorphous silicon (a-Si:H) thin films is described. Namely, we studied a metal-induced crystallization enhanced by a dc electric field in sandwich p⁺–i–n⁺structures. The samples were fabricated from wide-bandgap a-Si:H with high hydrogen content (13–51 at. % H). Macroscopic islands of a-Si:H (up to ∼1 mm in diameter) in the region between upper (CrNi) and lower (ITO) contacts crystallize instantaneously when a sufficiently high dc electric field (≳10⁵ V cm^-1) is applied. The crystallization sets in at room temperature and ambient atmosphere and is spatially selective. A proposed microscopic mechanism of such an easy macroscopic crystallization consists in easy diffusion of Ni and/or Ni silicides (representing nucleation sites) through a dense network of voids in hydrogen-rich a-Si:H. Received: 30 November 2000 / Accepted: 3 May 2001 / Published online: 27 June 2001     

Dynamical Jahn-Teller distortion in single crystals of Cu(II) doped magnesium potassium phosphate hexahydrate: a variable temperature EPR study

Single crystal electron paramagnetic resonance (EPR) studies on Cu(II)-doped magnesium potassium phosphate hexahydrate have been carried out at room temperature. The temperature dependence of g and A values has been obtained for the polycrystalline sample and the ground state is unambiguously identified. These results indicate the existence of a dynamic Jahn-Teller distortion for Cu(II) ion. The g and A tensor direction cosines are evaluated and compared with Mg-O directions, which confirms that Cu(II) enters substitutionally in the lattice.     

New types of short-range orientational ordering in ortho-para hydrogen monolayers

Orientational ordering in monolayers of solid hydrogen is discussed in view of recent experimental findings in NMR studies of (ortho)_c-(para)_1−c-hydrogen mixtures on boron nitride substrate reported for ortho-H₂ concentrations 0.35≤c≤0.92 and temperatures 0.14≤T≤1.80 K. Analysis of the temperature-concentration behavior for the observed NMR frequency splitting is given on the basis of a two-dimension (J=1)_c-(J=0)_1−c-rotor model for which the fundamental parameters, quadrupolar coupling constant Γ₀=0.50±0.03 K and the crystal-field amplitude V₀=0.70±0.10 K, are derived from experiment. The two distinct para-rotational (PR) short-range ordered structures driven by positive and negative crystalline fields are described in terms of the local alignment and orientation of the polar principal axis. It is shown that they are rather different from the ferromagnetic-type ordering suggested earlier by Harris and Berlinsky as a unique PR structure. The common quadrupolar glass and a new hindered rotor phases found below the 2D site percolation threshold c_p=0.72 are also discussed.     

Trace Analysis by Heavy Ion Induced X-Ray Emission

 Various K-, L- and M-shell X-ray production cross sections are measured for heavy ion impact on elements in the range Z ₂ = 13 to 83. The ion species range from Z ₁ = 10 to 36, and ion energies from 1 to 16 MeV are used. Enhanced cross sections are observed when the projectile K- or L- binding energy is similar to the energy of the target K-, L- or M-shell. This effect is used to improve the analysis sensitivity for selected elements. As an example trace analysis of Fe in glass with V, Mn, Co and Ni ions is investigated. Results are compared with proton induced X-ray emission analysis on the same samples. In these samples Fe-K_α X-ray production is similar for irradiation with 3 MeV protons and 14 MeV Ni ions. However the signal to background ratio is four times higher for the irradiation with Ni ions as compared to irradiation with protons. Advantages and drawbacks of heavy ion induced X-ray emission for quantitative analysis compared to proton induced X-ray emission analysis are discussed.     

Nuclear effects and higher twists in F3 structure function

We analyze the CCFR collaboration iron target data on the xF₃ structure function making particular emphasis on the extraction of the higher twist contributions from the data. Corrections for nuclear effects are applied in order to extract data on the structure function of the isoscalar nucleon. Our analysis confirms the observation made earlier, that the higher twist terms depend strongly on the level to which QCD perturbation theory analysis is applied. We discuss the impact of nuclear effects on the higher twist term as well as on the QCD scale parameter extracted from the fit to data. Received: 4 August 2000 / Accepted: 17 September 2000     

Reordering kinetics of ion-disordered Ni Al

A study of the reordering kinetics of ion-irradiated Ni₃Al is presented. The development of long-range order during annealing treatments is measured by quantitative electron diffractometry. According to the temperature dependence of the observed kinetics, the reaction is dominated by non-equilibrium vacancies. As a consequence, the kinetics can be calibrated versus the absolute number of atomic jumps necessary to establish the observed degree of order. In order to analyse the experimental data, Monte Carlo simulations are performed. It is shown that, beside the temperature dependence of the driving force, the ordering efficiency of the vacancy jumps itself is temperature dependent due to different mobilities of the atomic species. Received 6 December 1999 and Received in final form 23 June 2000