Ab initio and DFT studies on tautomerism of indazole in gaseous and aqueous phases

Electronic structure of optimized Ge₅, Ge₁₇, Ge₅–O and Ge₅ embedded in SiO₂ nanoparticles have been studied by density functional theory to find out the effect of cluster size and Ge–O bond(s) on the optical energy gap between LUMO and HOMO. It was found that the optical energy gap depends on both cluster size and the number of Ge–O bonds nonlinearly. The optical energy gap was found to be in visible light range when the Ge₅ nanoparticle has been embedded in SiO₂ matrix.     

Catalytic Adsorptive Stripping Voltammetry of Germanium(IV) in the Presence of Gallic Acid and Vanadium(IV)‐EDTA

A highly sensitive and selective catalytic adsorptive cathodic striping procedure for the determination of trace germanium is presented. The method is based on adsorptive accumulation of the Ge(IV)‐gallic acid (GA) complex onto a hanging mercury drop electrode, followed by reduction of the adsorbed species. The reduction current is enhanced catalytically by addition of vanadium(IV)‐EDTA. The optimal experimental conditions include the use of 0.03 mol/L HClO₄ (pH1.6), 6.0×10^?3 mol/L GA, 3.0×10^?3 mol/L V(IV), 4.0×10^?3 mol/L EDTA, an accumulation potential of ?0.10 V(vs. Ag/AgCl), an accumulation time of 120 s and a differential pulse potential scan mode. The peak current is proportional to the concentration of Ge(IV) over the range of 3.0×10^?11 to 1.0×10^?8 mol/L and the detection limit is 2×10^?11 mol/L for a 120 s adsorption time. The relative standard deviation at 5.0×10^?10 mol/L level is 3.1%. No serious interferences were found. The method was applied to the determination of germanium in ore, mineral water and vegetable samples with satisfactory results.     

Static atomic displacements of Sn in disordered NiAs/Ni2In type HT-Ni1+δSn

The crystal structures of the intermediate solid solution HT (high temperature) Ni_1+δSn with δ=0.28, 0.52 and 0.61 (refined Ni contents) have been analyzed in detail by X-ray diffraction on single crystals. The previously reported basic atomic arrangement, i.e., a NiAs/Ni₂In structure type (P6₃/mmc, Ni(1) on 2a, 0 0 0, Ni(2) with an occupancy δ on 2d, and Sn on 2c, ), is confirmed. However, strong anisotropic atomic displacements occur for Sn within the a-b plane of the hexagonal unit cell, which require a Gram-Charlier expansion of the probability density function of Sn in order to obtain a good fit to the diffraction data. Direction, magnitude and the concentration dependence of the displacements can be interpreted in terms of the geometrical requirements of the different local atomic configurations in the planes z=±1/4, so that the displacements can be identified as static ones.     

p—Si上电沉积Ni—W—P薄膜的结构与热稳定性

研究了ｐ－Ｓｉ上恒电流沉积Ｎｉ－Ｗ－Ｐ合金薄膜组成与结构的关系，讨论了镀层的组成、结构随沉积时间的变化．测定了非晶合金的晶体结构随热处理温度的改变以及ＤＴＡ曲线，结果表明，非晶Ｎｉ－Ｗ－Ｐ合金在晶化过程中形成两个纳米超微晶相，非晶Ｎｉ－Ｗ－Ｐ薄膜的热稳定性远高于通常使用的非晶Ｎｉ－Ｐ薄膜．     

Structural materials: metal-silicon-Boron. The Nb-rich corner of the Nb-Si-B system

Phase equilibria in the Nb-Nb₅Si₃-NbB region were studied in the melting (crystallization) range by means of light microscopy, XRD, SEM and EMPA on alloys after arc-melting and annealing at 1800°C and at subsolidus temperatures. Phase transition and melting temperatures were determined by DTA and pyrometric Pirani-Alterthum technique resulting in a solidus projection and two isopleths, Nb₇₇Si₂₃-Nb₇₇B₂₃ and Nb₉₉Si₁-Nb₅Si₂B. The T₂-phase Nb₅Si_3−xB_x (0?x?2, Cr₅B₃-type) was found to form equilibria with (Nb), NbB, Nb₃Si, and with the T₁-phase (Mn₅Si₃ derivative type). The T₂-phase melts incongruently (Nb₅Si_1.8B_1.2 at 2245°C) and forms a quasibinary eutectic with the niobium solid solution on a minimum tie-line at ∼1880°C.     

XRD-Studies of SiC/Si layers on carbon substrates

Structural investigations of thin films of SiC, SiC with free silicon and various titanium suicides (TiSi₂, TiSi and Ti₅Si₃) are described. The crystal phases have been identified using X-ray diffractometry. The growth of reaction products from surface reactions between silicon and deposited titanium can be observed.Dedicated to Professor Dr. rer.nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Silicon carbide nanotubes and nanotubular fibers: Synthesis, stability, structure, and classification

Published data on silicon carbide nanotubes (SiC-NT) are analyzed. According to theoretical calculations, single-layer SiC-NTs do not dissociate, but they have not yet been detected experimentally. According to the experimental data, metastable SiC-NTs with walls consisting of several layers and nanotube fibers were produced. The optimized structure of single-layer SiC-NTs was calculated by the RHF/6-31G quantum-chemical method. The possibility of obtaining SiC-NTs by gas-phase chemical deposition from methyltrichlorosilane in the temperature range of 800–1000 °C was investigated. Nanofibers and polygrained SiC nanotubes were obtained, but ordinary layer SiC nanotubes were not detected. To remove the inconsistencies it was first proposed to classify the nanotubes according to the structure of their walls, separating all the SiC-NTs into three types: 1) ordinary layer nanotubes with rolled layers, similar to carbon nanotubes; 2) polynanocrystalline nanotubular fibers or nanotubes with walls consisting of linked differently oriented nanograins; 3) monocrystalline synthetic nanotubes with ideal crystalline walls. It was concluded that the ordinary SiC-NTs of the first type are unstable with the exception of one-or two-layer nanotubes; stable SiC-NTs of the first type and SiC-NTs of the third type have not yet been discovered; only nanotubular fibers of the second type were obtained experimentally. __________ Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 42, No. 1, pp. 3–13, January–February, 2006.     

ICP-AES detection of silicon carbide impurities volatilized in a graphite furnace with the use of carbon tetrachloride vapour

The analytical capability of high-temperature halogenation with carbon tetrachloride vapour in a graphite furnace was investigated for silicon carbide powder with known chemical composition and particle size. Intensity vs heating time curves were determined for analytical lines of Al, B, Ba, Ca, Cr, Cu, Fe, Mg, Mn, Ti, V and Si constituents, volatilized with and without the presence of CCl₄ vapour in the furnace atmosphere. Igniting 10 mg SiC at 2100 °C for 60 s in chlorinating atmosphere, the evaporated fraction of most of the constituents was higher than 90% (for Al about 50%). The line intensity vs sample mass (4–26 mg) relationships were linear for all impurities studied, while the intensity of silicon line showed a relatively small change with the sample mass. BEC (background equivalent concentration) values for this solid sampling technique (10 mg loaded sample) were 2–20 fold lower than those calculated for the conventional solution sample introduction method.     

钯镁基体改进剂对铅,铋,锗在石墨炉中原子化影响的研究

通过原子吸收和X-射线衍射分析证明,加入钯镁基体改进剂在预热处理后对Pb、Bi和Ge三个元素分别生成金属间化合物PbPd_3、BiPd_3、Ge_9Pd_(23)和其他化合物,从而提高了最高允许灰化温度,改变了原子化机理。在原子化阶段这些金属间化合物直接分解为金属原子,结果提高测定灵敏度。