Effect of plasma treatment on interface property of BCN/GaN structure

Interface properties of BCN/GaN metal-insulator-semiconductor (MIS) structures are investigated by X-ray photoelectron spectroscopy (XPS) and capacitance versus voltage (C-V) characteristics measurements. The BCN/GaN samples are fabricated by in situ process consisting of plasma treatment and deposition of BCN film in the plasma-assisted chemical vapor deposition (PACVD) apparatus. XPS measurement shows that the oxide formation at the BCN/GaN interface is suppressed by nitrogen (N₂) and hydrogen (H₂) plasma treatment. The interface state density is estimated from C-V characteristics measured at 1 MHz using Terman method. The minimum interface state density appears from 0.2 to 0.7 eV below the conduction band edge of GaN. The minimum value of the interface state density is estimated to be 3.0 × 10¹⁰ eV⁻¹ cm⁻² for the BCN/GaN structure with mixed N₂ and H₂ plasma treatment for 25 min. Even after annealing at 430 °C for 10 min, the interface state density as low as 6.0 × 10¹⁰ eV⁻¹ cm⁻² is maintained.     

改善液晶光阀投影光学系统偏振特性的理论设计方法

定量分析了液晶光阀投影光学系统中影响系统对比度的主要因素，利用矢量方法建立三维空间数学模型对光线进行追迹，并利用琼斯矩阵和矢量光学的原理分析了偏振器件--主要是波片--和各种光学薄膜对光学系统性能的影响。给出了在一定假设条件下的对没有波片的光学系统和插入波征后的光学系统的仿真计算结果。两组数据比较表明在光路中插入合适相位差的波片可以显著提高系统对比度等性能。     

Time-resolved imaging of latent fingerprints with nanosecond resolution

Imaging of latent fingerprints using time-resolved (TR) method offers a broader platform to eliminate the unwanted background emission. In this paper, a novel TR imaging technique is demonstrated and implemented, which facilitates the detection of latent fingerprints with nanosecond resolution. Simulated experiments were carried out with two overlapping fingerprints treated with two fluorescent powders having different lifetimes in nanosecond range. The dependence of the fluorescence emission intensity in nanosecond resolution of TR imaging is also revealed.     

Nonvolatile photorefractive holographic recording in Sc:Ce:Cu:LiNbO3

In this paper experimental studies of nonvolatile photorefractive holographic recording in Ce:Cu:LiNbO₃ crystals doped with Sc(0,1,2,3 mol%) were carried out. The Sc:Ce:Cu:LiNbO₃ crystals were grown by the Czochralski method and oxidized in Nb₂O₅ powders. The nonvolatile holographic recording in Sc:Ce:Cu:LiNbO₃ crystals was realized by the two-photon fixed method. We found that the recording time of Sc:Ce:Cu:LiNbO₃ crystal became shorter with the increase of Sc doping concentration, especially doping with Sc(3 mol%), which exceeds the so-called threshold, and there was little loss of nonvolatile diffraction efficiencies between Sc(3 mol%):Ce:Cu:LiNbO₃ and Ce:Cu:LiNbO₃ crystals.     

利用模式的对称性研究光子晶体光纤的色散

由光子晶体光纤的对称性可以得到模式分布的对称性，根据模式的对称性选择适当的展开函数，可以使计算量大大减少。计算了六角结构光子晶体光纤的色散特性，得到了波长在1．55pm处色散为零时，光子晶体光纤的结构参量所满足的方程。     

Decay distribution of spontaneous emission from atoms in one-dimensional photonic crystal

Spontaneous emission behavior from atoms (or molecules) in one-dimensional photonic crystal with a defect is investigated. Taken all the TE and TM modes into account, the normalized spontaneous emission rate of the atom is calculated as a function of the position of the atom in the crystal. Results for both nonabsorbing dielectric structure and absorbing dielectric structure are presented. With the increase of the thickness of the defect in which the atoms are embedded, the oscillations of the spontaneous emission rate versus the position of the atom become dense and the lifetime distribution becomes narrow and sharp. The PC effect may lead to the coexistence of both accelerated and inhibited decay processes.     

单粒子势模型下价核子的密度分布

依据实验事实，利用单粒子势模型，计算了一些核态外层价核子的密度分布.计算给出了价核子在核外部分布的概率和贡献，以此作为晕核态的判断标准.通过研究均方根半径随结合能变化的规律，指出了晕核态存在的条件，尤其是质子晕核态存在的条件.这些对判断和寻找晕核态有现实的指导意义. 关键词： 单粒子势模型 价核子 密度分布 中子晕核态 质子晕核态     

Observation on meta-stability of thulium nitrate crystal by using electric measurements

Frequency dependence of ac conductivity from 1 to 10⁵ Hz and time series of the conductivity at 2 kHz were measured along c-axis of thulium nitrate crystal, Tm(NO₃)₃6H₂O at temperatures from 203.15 to 293.15 K. The meta-stability was observed. The frequency spectra of the conductivity were similar to those in disorder system. Aging effect was observed. Non-periodic instability (burst) was found. Non-linear dynamical property was characterized by 1/f noise spectrum, limit cycle in return map and dependence of correlation exponent on embedding dimension.     

高温超导体的结构组装

 在总结铜氧化物高温超导体晶体结构特点的基础上，提出了以无限层结构Cu-O钙钛矿为核心的结构组装概念，通过和相关结构的外延组合，衍生出了高温超导体的主要晶体构型。进一步运用此观念，建立了新的三元数命名法，并对高温超导体的晶体结构进行了归类。     

Crystal Structure of Adduct 2-Phenyl-imidazo [ 4,5-f ] 1,10-phenanthroline Methanol

The structure of the title adduct comprises a phenanthroline derivative 2-phenyl-imidazo[4,5-f]1,10-phenanthroline and a methanol.The composition of the crystalline adduct was characterized as C19H12N4.CH3OH.It belongs to orthorhombic system,space group Pna21 with a=1.3693(4)nm,b=2.2988(7)nm,c=0.51338(15)nm,V=1.6160(8)nm^3.Z=4,and final R1=0.0423.wR2=0.1012 .Crystal structure shows that all the 19 carbon atoms and 4 nitrogen atoms are coplanar.The bond length data indicated that a very extensive conjugation system was formed.This conjugation makes the compound being a potentially excellent energy transformer used for luminescent materials.