顶部籽晶法生长磁光晶体硼酸铁

本文首次采用顶部籽晶泡生法在敞开体系中生长了出了磁光晶体硼酸铁单晶。选用Ｂ２Ｏ３作自助溶剂，ＬｉＦ作稀释剂，确定了原料配方。对长出的晶体作了初步的物化性能测试。讨论了晶体生长的结果。     

激光二极管端面抽运的棒状Yb：YAG激光器

分析了影响激光二极管抽运Yb：YAG激光器调Q效率的参量，推导了激光二极管端面脉冲抽运Yb：YAG晶体的速率方程，解出了双程抽运情况下的净抽运量子产率。利用数值计算方法，模拟了净抽运量子产率与晶体长度，抽运光脉冲宽度等关系，得出晶体长度的优化可以提高Yb：YAG激光器输出效率。计算了词Q Yb：YAG激光器的最大增益、最大储能，分析了放大自发辐射对于Yb：YAG能量存储的影响。同时给出了激光二极管端面抽运调Q Yb：YAG优化设计方法。这些分析和计算为实际器件的研制提供参考。     

2,2’—二硫代双(4,6—二叔丁基苯酚)的晶体和分子结构

一种塑解剂经高压液体色谱分离制备出主要成份2,2′—二硫代双(4,6二叔丁基苯酚)。由质谱分析得到分子量为474化学式为C_(28)H_(2)O_2S_2、晶体呈现孪生。基体单晶属三斜晶系,空间群为(?)PI(NO.2),晶体结构用直接法解出,=0.07。研究结果表明该分子是二硫代酚类化合物。在EI场中,S—S键断裂是主要断裂过程。晶体中,分子的一个环上的羟基是无序分布的。羟基与最邻近的硫原子形成氢键。     

Crystal-Orientation Dependent Evolution of Edge Dislocations from a Void in Single Crystal Cu

The micro-void growth by dislocation emission under tensile loading is explored with focus on the influence of crystal orientations. Based on the elastic theory, a dislocation emission criterion is formulated. It is predicted that the preferential location of dislocation nucleation and its threshold stress are dependent on the crystal orientation. Large-scale molecular dynamics （MD） simulations are also performed for single crystal copper to illustrate the dislocation evolution pattern associated with a nano-void growth. The results are in line with those given by the theoretical prediction. As revealed by MD simulations, the characteristics of void growth at micro-scale depend greatly on the crystal-orientation.     

横向放大率法测定光具组的基点

介绍了用横向放大率法确定两薄透镜组成的光具组基点的原理和方法,该方法采用线阵光电耦合器件(CCD)测量物经光学系统成像的横向放大率,进一步提高了测量精度.     

Enhanced Raman Scattering by Quasi-phase-matched Processes in ax^（2） Photonic Crystal

An intense comb-shaped Raman spectra were obtained from a two-dimensional nonlinear x（2） photonic crystal - a hexagonally poled LiTaO3 crystal with lattice parameter 9 micros. The lowest Raman shift was down to 2 cm^-1 and the order of anti-stokes and stokes signals both achieved 11. The novel Raman spectra were mediated first by intense phonon-polariton fields, which were driven through the quasi-phase-matched coupling between the incident dual-beam both from an optical parametric oscillation laser, and further amplified greatly also by such quasi-phasematched nonlinear optical process. The dependence of the Raman spectra character on the wavelength and intensity of incident beams were studied in detail, which accordingly revealed information of the inelastic scattering and the elementary excitation in the nonlinear medium. These results on the other hand suggest technological importance for developing a novel Raman laser with the multi-wavelength output and a tunable frequency interval and for possible applications in quantum optics.     

高掺杂Ga对ZnSe:Ga,Cu晶体中深中心发射的影响

本文研究了高掺杂Ga对ZnSe:Ga,Cu晶体中深中心光致发光谱带的影响。首次在高掺杂ZnSe:Ga,Cu中观察到了Cu-G带峰值位置随Ga浓度增大向长波方向移动的现象,并把它归因于高浓度的Ga和Cu相互作用,产生了谱峰为5580Å的新发射带,其半高宽(FWHM)大于Cu-G谱带的半高宽。此外还得到,随着Cu浓度增加,Cu-G带与Cu-R带强度之比减小。文中指出,Ga浓度较低时,ZnSe:Ga,Cu晶体与ZnSe:Cu晶体有相同的Cu深中心发射规律,即随着Cu浓度增大,Cu-G带与Cu-R带的强度比增大,由Cu-R发射带占优势逐渐过渡到Cu-G发射带占优势。     

双轴晶体Nd^3＋：KGd（WO4）2的非偏振吸收光谱研究

报道了用三个方向相互垂直的非偏振吸收光谱测量计算Ｊｕｄｄ－Ｏｆｅｌｔ参数从而算出双轴晶体Ｎｄ３＋ＫＧｄ（ＷＯ４）２的荧光寿命、荧光分支比和发射截面的方法。得到的荧光寿命为１１９μｓ，平均发射截面为２．３×１０－１９ｃｍ２。     

Ce偶-偶同位素低激发态性质的IBM2描述

通过考虑同类核子相干对间的四极相互作用，在IBM2中对Ce偶－偶同位素^128Ce-^138Ce的低激发态能谱和E2跃迁几率及分支比进行了理论分析，计算结果有效地改善了IBM中这些核的γ带能谱的Staggering现象描述，与实验观察到的低激发态结果基本一致。