生物模板法常温合成CdS纳米线

采用新型生物模板法常温合成CdS纳米线的新方法,并对其结构和性能进行了表征。SAED分析表明:生物模板表面包覆上了结晶良好的CdS纳米颗粒。TEM照片表明:CdS纳米线长(4±0.6)μm,直径为(400±55)nm,构成纳米线的CdS颗粒尺寸为(5.5±0.3)nm。荧光光谱分析表明:该纳米线具有优异的荧光性质,使其在生物,电子领域有潜在的应用。     

Optically Transparent Electrodes Modified with Sulfide Ion‐Covered CdS Quantum Dots for Sensitive Photoelectrochemical Detection of Sulfhydryl‐Containing Compounds

A sensitive and selective photoelectrochemical sensor has been developed. Negatively charged, citrate‐capped CdS quantum dots (QDs) are assembled layer‐by‐layer onto indium tin oxide (ITO) electrodes precoated with positively charged poly(diallyldimethylammonium chloride). By exposing the modified photoelectrochemical electrodes to a Na₂S solution, QDs can be covered with excess S^2? ions. The weakly bound S^2? ions are easily replaceable with a sulphydryl‐containing analyte, and the photocurrent decrease is proportional to the analyte concentration. The detection limit is 0.4 nM for cysteine with a linear range of 1.0–100.0 nM. The level of cysteine in human serum samples has been quantified.     

有机硫源溶剂热法合成CdS纳米晶体

以二硫化四甲基秋兰姆((TMTD)作为有机硫源,分别在苯、水-苯溶剂中于不同温度、不同时间溶剂热法合成了CdS纳米晶体。采用FE-SEM、XRD和FTIR对晶体的结构和成形机理进行了研究。结果表明,溶剂热温度比反应时间对晶体形貌的形成影响更大。CdS纳米晶体是立方与六角的混合晶型。此外,溶剂的种类也是影响CdS纳米晶体结构和成形的重要因素,并且对花形CdS纳米晶体进行了阴极发光(CL)光谱的研究。     

一种在室温合成具有宽带隙CdS的简单方法

采用简单的磁控溅射方法, 在室温合成了CdS多晶薄膜. 在溅射CdS多晶薄膜过程中, 分别在Ar 气中通入0%、0.88%、1.78%、2.58%和3.40% (体积分数, φ)的O₂, 得到不同O含量的CdS多晶薄膜. 通过X射线衍射仪、拉曼光谱仪、扫描电子显微镜、X射线光电子能谱仪、紫外-可见光谱仪对得到的CdS多晶薄膜进行表征.分析结果表明: O的掺入能得到结合更加致密, 晶粒尺寸更小的CdS多晶薄膜; 与溅射气体中没有O₂时制备的CdS多晶薄膜的光学带隙(2.48 eV)相比, 当溅射气体中O₂的含量为0.88%和1.78% (φ)时, 制备得到的CdS多晶薄膜具有更大的光学带隙, 分别为2.60和2.65 eV; 而当溅射气体中O₂的含量为2.58%和3.40% (φ)时, 得到的CdS光学带隙分别为2.50 和2.49 eV, 与没有掺杂O的CdS的光学带隙(2.48 eV)相当; 当溅射气体中O₂的含量为0.88% (φ)时, 制备的CdS多晶薄膜具有最好的结晶质量. 通过磁控溅射方法, 在溅射气体中O₂含量为0.88% (φ)条件下制备的CdS多晶薄膜表面沉积了CdTe 多晶薄膜并在CdCl₂气氛中进行了高温退火处理, 对退火前后的CdTe多晶薄膜进行了表征. 表征结果显示: CdS中掺入O能得到结合更紧密、退火后晶粒尺寸更大的CdTe多晶薄膜. 通过磁控溅射方法, 在CdS制备过程中于Ar 中掺入O₂, 在室温就能得到具有更大光学带隙的CdS多晶薄膜, 该方法是一种简单和有效的方法, 非常适用于大规模工业化生产.     

CdS纳米颗粒填充的自支撑多孔硅光致发光特性

为了研究CdS纳米颗粒填充的自支撑多孔硅的光致发光特性,选用电阻率为0.01~0.02Ω·cm的P型硅片,先采用二步阳极氧化法制备自支撑多孔硅,再利用电泳法将CdS纳米颗粒填充入该自支撑多孔硅中.采用扫描电子显微镜、X射线能谱分析、X射线衍射分析、光致发光谱分析对所制备样品的形貌、相结构、组份及发光性能进行研究.实验结果表明:自支撑多孔硅内部成功填充了CdS纳米颗粒,该CdS纳米颗粒衍射峰为(210);CdS纳米颗粒填充的自支撑多孔硅光致发光峰峰位发生红移,且从570nm转移到740nm;电泳时间直接影响CdS纳米颗粒的填充量,导致相关的发光峰强度及发光峰位明显不同.     

Dual MOF-Derived MoS2/CdS Photocatalysts with Rich Sulfur Vacancies for Efficient Hydrogen Evolution Reaction

Cocatalyst plays an important role in efficient charge transfer and separation for photocatalysis. Herein, a MoS₂/CdS photocatalyst with MoS₂ as cocatalyst was designed by using Mo-MOF and Cd-MOF as precursors. Due to the existence of rich sulfur vacancies and 1T phase, MoS₂ shows strong charge capture and transport ability. The photo-generated electrons on conduction band (CB) can be bound by the sulfur vacancy of CdS and effectively transported to MoS₂ through the compact interface between the CdS nanoparticles and 2D large-scale MoS₂. The optimal photocatalyst 1 %MoS₂/CdS exhibited dramatically improved photocatalytic hydrogen production activity, which is 28 times that of pristine CdS and even about 2 times that of 1 %Pt/CdS with same loading amount of noble metal Pt. This work highlights the role of Mo-MOF derived MoS₂ with 1T-2H phases as a sustainable and prospective candidate of cocatalyst for improving charge separation and photocatalytic stability of MoS₂/CdS composites.     

Characterization and growth of CdS nanoparticles by a cost effective chemical reduction method

A simple chemical reduction method is followed to grow CdS nanoparticles at room temperature with different duration of time. The grown samples are ultrasonicated in ethanol. The dispersed samples are characterized using electron diffraction techniques. Simultaneously optical absorption, photoluminescence and longtime photorelaxation of these samples are studied at room temperature. An increase in band gap is observed in each case as compared to bulk CdS. Also particle size increases with increase of growth time and hence there is decrease of band gap with increase of growth duration. Simultaneously long time relaxation increases with increase of growth time. An attempt is made to correlate the structural, optical, electrical and opto‐electrical properties. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

CdS:Mn/SiO2复合纳米颗粒的反常的磁学特性

采用反胶束法,合成了硅土包裹的Mn2+掺杂的CdS纳米颗粒。利用高分辨透射电镜(HRTEM)和电子自旋共振谱 (EPR) 对这些纳米颗粒的结构进行了表征。利用超导量子干涉磁力计（SQUID）测量了这些纳米颗粒在低温下的磁学特性。研究结果表明：扩散在硅土基质中的CdS:Mn纳米颗粒的磁滞回线相对于磁场轴有明显的偏移,而有致密包裹层SiO2的CdS:Mn纳米颗粒却使磁滞回线的偏移消失,对于磁性纳米颗粒在磁化过程中出现的这一奇特的现象进行了合理的解释。