Pr3+掺杂Na5 Lu9 F32单晶发光性能的优化

应用坩埚下降法生长了Pr~(3+)离子掺杂的Na_5Lu_9F_(32)单晶体.系统地研究了Pr~(3+)掺杂的Na_5Lu_9F_(32)单晶的吸收光谱、荧光光谱和荧光衰减曲线.应用Judd-Ofelt理论分析计算了其光学强度等参数,结果表明Pr~(3+)离子处于Pr-F强共价键的高对称环境中.在440nm光的激发下观察到以482、523和605nm为中心的尖锐的强荧光发射带.研究了Pr~(3+)掺杂浓度对上述发光强度的影响规律,实验发现当Pr~(3+)掺杂浓度达到～0.5mol%时,其荧光发射强度达到最大.分析了环境温度从298K到443K变化时对荧光强度的影响,随着温度的增加,荧光强度逐步变弱,且其523nm的绿光受温度影响要小于482nm的蓝光和605nm的红光.     

缅怀施汝为老师

施汝为老师在20世纪30年代曾留学美国,从事铁钴和镍钴合金单晶体的各向异性的研究工作(在这以前只有人研究过铁或钴单晶体的各向异性),这在磁学的发展上是有重要贡献的.他回国后一直从事磁学方面的教学和研究工作,是我国磁学界元老之一.     

High-Rate Growth and Nitrogen Distribution in Homoepitaxial Chemical Vapour Deposited Single-crystal Diamond

High rate （〉 50 μm/h） growth of homoepitaxial single-crystal diamond （SCD） is carried out by microwave plasma chemical vapour deposition （MPCVD） with added nitrogen in the reactant gases of methane and hydrogen, using a polyerystalline-CVD-diamond-film-made seed holder. Photolumineseenee results indicate that the nitrogen concentration is spatially inhomogeneous in a large scale, either on the top surface or in the bulk of those as-grown SCDs. The presence of N-distribution is attributed to the facts： （i） a difference in N-incorporation efficiency and （ii） N-diffusion, resulting from the local growth temperatures changed during the high-rate deposition process. In addition, the formed nitrogen-vacancy eentres play a crucial role in N-diffusion through the growing crystal. Based on the N-distribution observed in the as-grown crystals, we propose a simple method to distinguish natural diamonds and man-made CVD SCDs. Finally, the disappearance of void defect on the top surface of SCDs is discussed to be related to a filling-in mechanism.     

分子晶体萘的生长技术

本文描述了一种将区域融熔法与Bridgman方法相结合的单晶生长炉,用它可生长直径为1—1.3cm、长度可达15cm且适用于超声研究用的萘(Naphthalenc)单晶.该晶体生长炉具有结构简单、操作方便以及随时可以观察炉内单晶生长情况等优点.文中讨论了晶体容器的形状对单晶生长的影响,也简单介绍了汽相生长萘单晶薄片的实验.萘是较软的单晶体,所以本文提及的研磨和抛光方法对制备其它软的单晶体(同样适用于声学测量)也许具有参考价值.     

晶体取向对单晶体断裂特征影响的模拟分析

结合Ni基单晶合金制三种不同晶体取向的紧凑拉伸试样试验,本文利用考虑有限变形和品格转动效应的晶体滑移有限元程序对单晶体三维断裂特征进行了模拟计算分析,详细考察了裂纹尖端三维应力场特征和断裂特征,结果表明:晶体取向对裂纹尖端应力场有较大影响,但应力沿试样厚度方向明显分成两个部分,在试样心部,应力沿厚度方向变化不大,在试样外表面则明显变化。裂纹尖端张开位移(CTDD)沿厚度方向类似分成两个部分。垂直于滑移面的应力分量致单晶体的准解理断裂,即裂纹的起裂和扩展途径均与该应力分量有关。     

单晶铁电体的宏细观本构关系描述

以高技术电子材料－铁电单晶体为研究对象，在对铁电体中电畸内的细观力学耦合场分析的基础上，采用Ｍｏｒｉ－Ｔａｎａｋａ方法以自洽的方式导出了材料构元的Ｈｅｌｍｈｏｌｔｚ自由能及Ｇｉｂｂｓ自由能函数的解析表达式。并分析在广义应力空间和广义应变空间中，按Ｈｉｌｌ－Ｒｉｃｅ内变量本构理论框架，导出了铁电体畸变屈服面方程，增量型本构关系及内变量的演化方程。文末给出了对ＢａＴｉＯ３单晶材料力电行为的一维数值模拟     

对聚合物玻璃化转变的几点新认识

基于聚合物玻璃化转变的定义,探讨了聚合物宏观单晶体和聚合物单链单晶的玻璃化转变问题,指出玻璃化转变的温度依赖性不服从普适的Arrhenius方程,可以把WLF方程看作是聚合物玻璃化转变的特有温度依赖关系。介绍了二维状态下聚合物可能的玻璃化转变。     

Thermoelectric Properties of Czochralski GeSi Crystal

In order to discuss the application possibility of SiGe crystal in thermoelectric materials,we investigated the thermoelectric properties of several silicon-germanium alloys with different content,orientation and electric conductive type. As discussed in the experiment result,the absolute value of Seebeck coefficient fluctuates from 300 to 600 μV/K in the whole temperature range. In the present paper,the relationship of Seebeck coefficient against content,orientation and electric conductive type is summarized in detail. The Seebeck coefficient of the sample with <111> orientation is smaller than that in <100> at the same temperature. Absolute value of P-type is larger than that of N-type except pure Ge. But as the temperature increases,the absolute value of pure Ge decreases many times as quickly as that of other specimens. In addition,the specimens of bulk GeSi alloy crystals for experiment were grown by the Czochralski method through varying the pulling rate during the growing process.     

晶体取向对单晶体断裂特征影响的模拟分析

结合Ｎｉ基单晶合金制三种不同晶体取各的紧凑拉伸试样试验，本文利用考虑有限变形和晶格转动效应的晶体滑移有限元程序对单晶体三维裂特征进行了模拟计算分析，详细考察了裂纹尖端三维应力场特征和断裂特征，结果表明：晶体取向对裂纹尖端应力场有较大影响，但应力沿试样厚度方向明显分成两个部分，在试样心部，应力沿厚度方向变化不大，在试样外表面则明显变化，裂纹尖端张开位移（ＣＴＯＤ）沿厚度方向类似分成两个部分，垂直于滑