改进的升华法制备氮化铝单晶体

采用改进的升华法在氮气环境下制备氮化铝单晶体.通过优化实验条件制备出了六角形的高质量的氮化铝单晶体.实验发现,在坩埚的不同区域得到的氮化铝晶体的大小和形态有所不同.讨论了温度梯度对氮化铝晶体尺寸大小和形态的影响.     

CdSe晶片的红外透过率研究

将经过多级提纯、垂直无籽晶气相输运法生长的CdSe晶锭切割,获得沿生长轴向分布的1.3mm厚晶片系列,采用日本SHIMAZU公司的IRpresting-21傅立叶变换红外光谱仪、ZC36型高阻仪及X射线能谱仪对该晶片组的红外透过率、电阻率、成份百分含量进行了测试,依据晶片对红外光的吸收机理,讨论了CdSe晶片在中红外区域透过率的理论值和影响其红外透过率的主要因素,研究了红外透过率与晶片性能的内在联系,为探测器级CdSe晶片的筛选提供了一种简便有效的方法.     

Synthesis and Structure of Zinc 3-Hydroxy-2-mercaptopyridine Complex,Zn(C_5H_4NOS)_2

1 INTRODUCTION The zinc-thiolate complexes have been widely studied due to their comprehensive applications[1～3]. In an attempt to synthesize polynuclear zinc-thiolate complexes, we used a substituted pyridine contain- ing two substituent groups, 3-hydroxy-2-mercapto pyridine, as a potential tridentate ligand to react with Zn(NO3)2 in the MeONa-MeOH solution at room temperature, obtaining a new mononuclear zinc-complex, Zn(C5H4NOS)2. In this case, the pro- totropy under basic cond…     

三温区坩埚下降法生长硫镓银晶体

本文通过对硫镓银单晶生长习性的分析研究,设计组装了三温区单晶炉,采用三温区坩埚下降法生长出了外形完整、无裂纹的AgGaS2单晶体,尺寸达10mm×25mm.实验测定了AgGaS2晶体的差热分析曲线和红外透射谱,以及单晶{112}解理面的X射线衍射谱,结果表明生长晶体的质量较高.     

碲锌镉单晶体的(110)面蚀坑形貌观察

本文报道了一种能够在室温下择优腐蚀碲锌镉(CZT)单晶体(110)晶面的腐蚀液配方,并对富Cd生长的CZT晶体蚀坑形貌进行了扫描电镜观察.结果表明晶体(110)面腐蚀坑形状为三角形,并初步对蚀坑的成因进行了分析,估算出CZT(110)面蚀坑密度约为103～105/cm2数量级.这说明富Cd原料的改进布里奇曼法可以生长出低蚀坑密度的CZT单晶体.     

Carbide Identification in Different Regions of a Thin Metal Film Covering on an HPHT As-Grown Diamond Single Crystal from Ni-Mn-C System

Diamond single crystals were synthesized in the presence of NI-Mn catalyst under high temperature and high pressure(HPHT).A thin metal film covering on as-grown diamond formed during diamond growth was examined using transmission electron microscopy.It was shown that phase compositions of the region near the as-grown diamond are different form those of other regions in the film.     

有机超导体的临界温度已达117K

高温超导体的转变温度Ｔｃ 正沿着三条路线被提高 .其一是铜氧化合物超导体 ,从 1986年发现镧系的ＬＳＣＯ和钇系的ＹＢＣＯ ,至 1993年Ｔｌ 2 2 0 1超导体的Ｔｃ 已达到 133Ｋ ,而在加压的条件下 ,Ｈｇ系的Ｔｃ 可达 16 4Ｋ .其二是轻主族元素化合物 ,以 2 0 0 1年发现的Ｔｃ～ 4 0Ｋ的ＭｇＢ2 为代表 .其三是有机超导体 ,1979年发现的第一个电荷转移盐有机超导体 ,其Ｔｃ 在 1Ｋ以下 ,后来这类材料的Ｔｃ 提高到约10Ｋ[1,2 ] .1991年在碱金属Ａ掺杂的Ａ3 Ｃ60 大块超导体中 ,观察到的Ｔｃ 为 18Ｋ .近年来 ,美国贝尔实验室等一些研究机构 …     

Magnetocrystalline Anisotropy and Magnetoelasticity of Preferentially Oriented Martensitic Variants in Ni52Mn24Ga24 Single Crystals

The magnetocrystalline anisotropy and magnetoelasticity of preferentially oriented martensitic variants in an off-stoichiometric Ni52Mn24Ga24 single crystal have been investigated.We found that the easy magnetization direction of the martensite phase in the [110] direction,and the hard magnetization exhibited in [001],the growth direction of single crystals.The temperature dependence of the anisotropy fields and constants of Ni52Mn24Ga24 have been determined.It was found that,at the martensite phase,the anisotropy field increases monotonically with decreasing temperature,but the anisotropy constant first increases rapidly and then the increasing rate becomes smaller and smaller.Based on a previous model,the present results suggest that the competition between the Zeeman energy and the magnetocrystalline anisotropy energy is mainly responsible for the magnitude of magnetic-field-induced strain in this material.     

A novel CZT detector using strengthened electric field line anode

In this paper, we report on the design, simulation and testing of a novel CZT detector with an electrode named the Strengthened Electric Field Line Anode (SEFLA). The Strengthened Electric Field (SEF) technique and Single Polarity Charge Sensing (SPCS) technique are implemented. It could achieve the same performance as Coplanar Grid, Pixel Array CZT detectors but requires only a simple readout system. Geant4, Ansoft Maxwell and a self-developed Induced Current Calculator (ICC) package are used to develop an understanding of how the energy spectrum is formed, and the parameters of the detector are optimized. A prototype is fabricated. Experimental results demonstrate the effectiveness of this design. The test shows that the SEFLA detector achieves a FWHM of 6.0% @59.5 keV and 1.6% @662 keV, which matches well with the simulations.