Optical resonator for high-power transverse flow CO2 lasers

A new design of the U-type resonator is described. In this way, a laser beam with symmetrical intensity profile (regarding to a symmetry plane) can be extracted from an active medium that exhibits gain asymmetry along one of the transverse directions. The whole area of the active medium cross-section can be used, and consequently the laser efficiency will be increased. This resonator structure was applied for efficiency power extraction (as a low order TEM modes laser beam) from a DC excited transverse flow CO₂ laser with cylindrical geometry. Although the cross-section area of the discharge was entirely used (including the cathode fall region), a symmetrical intensity profile of the laser beam (regarding to the two orthogonal symmetry planes) was obtained in the near field as well as in the far field; the gain asymmetry along the flow direction was compensated by the gas circulation fluidodynamical circuit with two counterflowing discharge channels. A double-U optical resonator was introduced in order to provide a laser beam with axial symmetry.For the practical construction of these two types of optical resonators we have developed two new types of 90° deflection elements: the first one, which does not reverse the image (and which has the properties of the pentaprism), and the second one, which rotates the image with 90° angle. Both elements exhibit good focusability if they are equipped with two concave mirrors.     

Performance of a CW pumped Nd:YVO4 amplifier with kHz pulses

Until recently, simple and reliable high repetition-rate laser sources with nanosecond pulses much shorter than from conventional A-O Q-switch lasers were not available. However over the past 2 years we have developed such lasers based on proprietary fast E-O switching technology, which allows designs delivering 1 ns pulses and subnanosecond jitter for good synchronisation. The technology provides pulses with multi-kW peak power and repetition-rates to >100 kHz.Most recently, the performance of these short pulse lasers has been developed further by implementing oscillator/amplifier (master oscillator and power amplifier, MOPA) technology which increases the output to >1 W average power. Here we report on a simple model that has been used to predict the performance of the CW pumped Nd:YVO₄ amplifier used in the MOPA laser. The model is based on the well-known expressions for the saturated gain applying to laser pulses, but more usually applied to pulse-excited amplifiers. The model is shown to allow a good interpretation of the amplifier behaviour for kHz pulses and to be a useful tool for predicting the performance of the MOPA laser.     

High-power multibeam CO2 laser for industrial applications

Multibeam CO₂ lasers consist of a large number of closely packed parallel glass discharge tubes, all sharing a common plane parallel resonator. This paper describes construction and operation of a CW multibeam CO₂ laser consisting 20 discharge tubes and cooled length of 1500 mm, delivering 1 kW power. A high-frequency pulser is used for producing preionization in all discharge sections for initiating the main DC discharge simultaneously in all discharge tubes. Plane parallel resonator consists of a plane ZnSe mirror of 90 mm diameter having 60% reflectivity and a gold-coated copper mirror of same diameter. This laser operates in waveguide regime and laser power is not critically sensitive to mirror misalignment.     

脊形掺铒Al2O3光波导放大器级联特性的模拟计算

利用有限元法分析了脊形掺铒Al₂O₃光波导放大器内信号光和抽运光的场模式分布、速率方程求解铒离子五能级系统的粒子数分布.数值模拟了光波导净增益与信号光功率的关系和多个放大器级联的净增益特性.结果表明：级联系统存在着净增益亏损.低掺铒浓度的光波导作前级放大器的组合方式,级联系统总净增益最大.     

HL-2A 装置的边缘参数测量

HL-2A 装置中平面边缘的等离子体特性通过磁力传动的马赫/ 雷诺协强/ 朗缪尔10 探针组进行了研究。10 探针组安装在可径向向里和向外移动, 并可绕轴旋转360^o 的传动杆上, 用于测量主等离子体边缘的温度、密度、悬浮电位、空间电位、径向和极向电场、湍流的雷诺协强、径向和极向等离子体流速及其径向分布。HL- 2A 装置的实验结果表明, 边缘等离子体扰动诱发的雷诺协强产生了边缘极向流; 雷诺协强的径向梯度驱动带状流抑制了湍流输运。     

用于光纤拉曼放大器抽运源的单级光纤拉曼激光器

抽运光源是光纤拉曼放大器应用于密集波分复用系统的关键技术,设计了一种紧凑型的808nm激光二极管抽运的基于钒酸钇（Nd^3＋：YVO4）晶体1342nm固体激光器模块,提出利用上述1342nm固体激光器抽运基于光纤光栅的单级全光纤型拉曼谐振器获得1．4μm激光输出的光纤拉曼激光器,分析了固体激光器的阈值特性、性能优化方法和单级光纤拉曼谐振器的设计方法。上述1342nm固体激光器模块在抽运功率2W时获得了最大655mW的激光输出功率和42．6％的斜率效率,单级拉曼谐振器的1342nm到1．4μm光功率转换斜率效率达75％,在1425nm、1438nm、1455nm和1490nm处的输出功率达到300mW以上。最后给出基于1．4μm光纤拉曼激光器抽运的宽带平坦放大的光纤拉曼放大器的结构参量和性能测试结果。     

N2- and O2-broadening coefficients and profiles for millimeter lines of N2O

For the purpose of atmospheric applications, we have measured N₂- and O₂-induced broadenings and shapes of rotational lines of N₂O in the 235-350 K temperature range, precisely the J=8←7, J=22←21, and J=23←22 lines, located near 201, 552, and 577 GHz, respectively. The analysis of experimental lineshapes shows up significant deviations from the Voigt profile, which are characteristic of line narrowing processes. In a first step, the Voigt profile was considered for the determination of pressure broadening parameters and of their temperature dependencies. Results are in good agreement with the dependence from rotational quantum number previously observed for other rotational and rovibrational lines. They are well explained by calculations based on a semiclassical formalism that includes the atom-atom Lennard-Jones potential in addition to electrostatic interactions up to hexadecapolar contributions. In a second step, observed lineshapes were analyzed by using the Galatry profile and a speed-dependent Voigt profile. The nonlinear pressure behavior observed for the diffusion rate β involved in the Galatry profile leads to rule out the possible role of velocity/speed changing collisions, and to infer that discrepancies from the Voigt profile result from the dependence of relaxation rates on molecular speeds. This interpretation is supported by the comparison of optical and kinetic radii and confirmed by theoretical calculations of relaxation rates. Finally, it can be claimed that, for the N₂O-N₂ and N₂O-O₂ systems, deviations from the Voigt profile are explained by a speed-dependent Voigt profile.     

Experimental confirmation by galvanomagnetic methods of a complex transport model in In0.53Ga0.47As layers deposited by MBE on SI-InP

At low temperatures In_0.53Ga_0.47As samples show an increase of carrier concentration, which can be explained in terms of a two carriers transport model. This type of problem exists since the beginning of the semiconductor era, dating back to monocrystalline germanium.We propose that in all the investigated layers, there are X atoms or charged dislocations in the region of the first monolayers, which are built in during epitaxial growth. The layers were intentionally undoped. They form an impurity band in which low mobility carriers dominate over the localised electron scattering due to the s-d exchange interaction. These carriers do not freeze out at liquid helium temperature and give rise to two transport media for electrons; a conduction band at higher temperatures and an impurity band at lower temperatures. The electron which fall down onto the previously ionised X atoms, then move by thermally activated hopping. We show that the two carriers model for In_0.53Ga_0.47As epitaxial layers are confirmed by the carrier concentration-temperature, carrier concentration-magnetic field, resistivity-magnetic field behaviour, and also by YKA theory also. The differences between the two transport models are so distinctive that observed phenomena may exist. This paper presents experimental results, which constitute comprehensive evidence for the complicated structure of the semiconductor epitaxial layers on the sample of n-type In_0.53Ga_0.47As/InP layer with n=2.2×10¹⁵/cm³.     

Synthesis and characterization of Ni magnetic nanoparticles in AlMCM41 host

Superparamagnetic nickel nanoparticles were prepared by incorporating nickel ion into AlMCM41 as a nanoreactor and then reduced with sodium borohydride or H₂ gas. Products were characterized by elemental analysis, transmission electron microscopy, X-ray powder diffraction, and magnetic susceptibility. The nickel particle size and blocking temperature depend on the reduction method.     

First-principles energy band calculation for undoped and N-doped InTaO4 with layered wolframite-type structure

The electronic structures of undoped and N-doped InTaO₄ with optimized structures are calculated within the framework of the density functional theory. Calculated lattice constants are in excellent agreement with experimental values, within a difference of 2%. The valence band maximum (VBM) is located near the middle point on the ZD line and the conduction band minimum (CBM) near the middle point on the DX line. This means that InTaO₄ is an indirect-gap material and a minimum theoretical gap between VBM and CBM is ca. 3.7 eV. The valence band in the range from −6.0 to 0 eV mainly consists of O 2p orbitals, where In 4d5s5p and Ta 5d orbitals are slightly hybridized with O 2p orbitals. On the other hand, the conduction band below 5.5 eV is mainly composed of the Ta 5d orbitals and the contributions of In and O orbitals are small. The band gap of N-doped InTaO₄ decreases by 0.3 eV than that of undoped InTaO₄, because new gap states originating from N 2p orbitals appear near the top of the valence band. This result indicates that doping of N atoms into metal oxides is a useful method to develop photocatalysts sensitive to visible light.