Growth and characterization of ultrathin GaP layer in a GaAs matrix by X-ray interference effect

An ultrathin two monolayers thick layer of GaP sandwiched within a GaAs matrix was grown by atomic layer molecular beam epitaxy (ALMBE). The X-ray interference effect (Pendellösung) was used to determine the structural parameters such as thickness, lattice parameter, chemical composition, and strain. Excellent agreement between the experimental rocking curve and the simulation using the dynamical theory of X-ray diffraction was found indicating the high quality of the sample. Analysis of the scans in symmetrical (004) and asymmetrical (224) reflections, sensitive to both perpendicular and parallel strain, shows that the GaP layer is coherent with the substrate, i.e., it is below the critical thickness in agreement with critical thickness theories. Despite the competition for incorporation between arsenic and phosphorus the experimental GaP thickness is found to be identical to the nominal growth value, demonstrating full incorporation of phosphorus when growing by ALMBE. No significant out-diffusion or segregation of P is observed.     

STM characterisation of organic molecules on H-terminated Si(111)

We present the first high resolution STM images of organic molecules on the technological important hydrogen terminated silicon surface. Ordered layers of PTCDA and PTCDI were prepared on this surface by organic molecular beam epitaxy. The submolecular contrast of these molecules on Si(111)/H obtained in the high resolution images agrees with the corresponding images on HOPG and MoS₂ substrates.     

New measurements of the emission spectra of Sm2+ in KMgF3 and NaMgF3 crystals

The fluorescence of divalent samarium in KMgF₃ and NaMgF₃ crystals is investigated. The emission is observed to originate from transitions between the ⁵D_J, and ⁷F_J multiplets of the 4?⁶ configuration. More precisely, the lowest ⁵D_J level, ⁵D₀, appears to be the most efficient emitting level in the temperature range 4–300K. Contrary to what has been reported elsewhere, the Sm²⁺ fluorescence in both crystals does not exhibit any broad band emission even at room temperature. The great number of lines in the ⁵D₀→⁷F_J patterns gives evidence of the multiple-center origin of the fluorescence.     

Electrical behaviour of catalytic nanostructured CeO2/CuOx composites under air-methane gas impulses

Nanostructured composites based on copper oxide and cerium dioxide phases [CuO-CeO₂] were elaborated from sol-gel route, with weight fractions of CuO phase ranging between 0 and 0.4. They are interesting potential catalysts allowing conversion of CH₄ and CO into CO₂ and H₂O and might be used in miniaturized gas sensors. An electrical study of this nanostructured system was carried out to determine catalytic behaviours under air-methane impulses at 350 °C. The electrical analysis was based on a specific homemade electronic device. Time dependent interactions between gas pulses and solid catalyst (CuO/CeO₂) were analyzed from a frequency modification of the electronic device. Kinetic parameters were determined from a model describing adsorption and desorption of gases adapted to short interaction time between gas and solid. These time dependent electrical behaviours were then correlated with infrared spectroscopy analyses allowing time dependent analysis of methane conversion into CO₂ gas, for long interaction time between gas and solid.     

The immutability of the critical current under any sample cross-sectional form modification

The temperature and size dependences of the critical currents in bismuth-based high-temperature superconducting ceramic samples consisting of randomly oriented grains have been studied in zero magnetic field. It is shown that the critical current is a function of the sample cross-sectional area only. At constant sample cross-sectional area the value of the critical current is independent of any variation of a sample cross-sectional shape. At the same time the distributions of the critical current density and induced magnetic field in ceramics are functions of the sample cross-sectional shape. These values very in accordance with a change of the sample cross-sectional shape (at constant cross-sectional area i.e. at constant value of the critical current). The field and current distributions in the rectangular sample are reported.     

Optical parameters of nanostructured thin films of?electromagnetite Pb1? x Sr x (Fe0.012Ti0.988)O3

Polycrystalline Pb_1−x Sr _x (Fe_0.012Ti_0.988)O₃ (0.2≤x≤0.4) (PSFT) thin films have been grown on fused quartz substrates by metallo-organic decomposition technique. The grown films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), source meter and UV–Vis–NIR spectrophotometer to determine the structural, microstructural, dc resistivity and optical properties. The XRD pattern confirmed that the PSFT films has distorted tetragonal single phase, which close to cubic at higher Sr concentration. AFM analysis revealed that the grains size reduces with increasing Sr concentration and their average values lies in the range of 26–9 nm. The higher values of dc resistivity of PSFT nano grains indicate that the transmission of light occurs within these grains up to short wavelength. The refractive index and the extinction coefficient were determined from the optical transmission spectrum in the wavelength range of 200–1100 nm and compared with that theoretically calculated, when fitted to a single oscillator model. The values of optical band gap were determined from Tauc’s extrapolation fitting and suggests that the transformation of electrons during transmission of light through local states within Fermi gap.     

Microstructural and optical properties of multiple closely stacked InAs/GaAs self-assembled quantum dot arrays

The microstructural and the optical properties of multiple closely stacked InAs/GaAs quantum dot (QD) arrays were investigated by using atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL) measurements. The AFM and the TEM images showed that high-quality vertically stacked InAs QD self-assembled arrays were embedded in the GaAs barriers. The PL peak position corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E₁-HH₁) of the InAs/GaAs QDs shifted to higher energy with increasing GaAs spacer thickness. The activation energy of the electrons confined in the InAs QDs increased with decreasing with GaAs spacer thickness due to the coupling effect. The present results can help to improve the understanding of the microstructural and the optical in multiple closely stafcked InAs/GaAs QD arrays.     

Electroluminescence of Si Nanocrystal-Doped SiO2

We perform a comparative st udy on the electroluminescence （EL） and photoluminescence （PL） of Si nanocrystaldoped SiO2 （nc-Si：SiO2） and SiO2, and clarify whether the contribution from Si nanocrystals in the EL of nc-Si：SiO2 truly exists. The results unambiguously indicate the presence of EL of Si nanocrystals. The difference of peak positions between the EL and PL spectra are discussed. It is found that the normal method of passivation to enhance the PL of Si nanocrystals is not equally effective for the EL, hence new methods need to be explored to promote the EL of Si nanocrystals.[第一段]     

Air Stability of Cs2CO3:Ag/Ag Cathode for Organic Light-Emitting Diodes

We report the superior stability of the composite Cs2CO3 ：Ag/Ag cathode structure, which can be used in efficient organic light-emitting diodes （OLEDs）. Devices with the Cs2CO3：Ag （1：10, 5nm）/Ag （95nm） cathode show a considerably improved lifetime compared with the control device with the Cs2CO3 （0.5 nm）/Ag （100 nm） cathode. The composite Cs2CO3 ：Ag/Ag film is proved to be stable in the atmosphere. X-ray diffraction （XRD） is applied to analyze the crystalline structure of the Cs2CO3：Ag film, and it is demonstrated that CsAg alloy is formed, leading to the improved stability of the thin film and the devices.     

Strongly enhanced pinning force density in YBCO–BaTiO3 nanocomposite superconductor

YBa₂Cu₃O_7−δ–BaTiO₃ (4 wt.%) (YBCO–BTO (4%)) composite bulk polycrystalline sample has been synthesized by solid state reaction method. The structure of composite sample has been investigated by X-ray diffraction and magnetization measurements were carried out using MPMS SQUID VSM. The superconducting transition temperature of the YBCO–BTO (4%) sample was similar to that of pure YBCO. The critical current density (J_c) for YBCO–BTO (4%) sample increases significantly as compared to pure YBCO sample. The enhancement of the critical current density in the YBCO–BTO (4%) sample has been attributed to the presence of BaTiO₃ nanoparticles acting as artificial pinning centres. The introduction of BaTiO₃ particles in YBCO increases pinning force density from 0.71 GN/m² to 1.41 GN/m² at 4 K and 0.33 MN/m² to 0.97 MN/m² at 77 K.