非常规超导体及其物性

1986年高温铜氧化合物超导体的发现开辟了超导研究的新纪元,人们开始大量探索具有非常规超导机制的新型超导材料,以期发现具有更高超导转变温度的超导体。文章将结合作者多年来的研究,简要介绍具有代表性的非常规超导体材料家族及其物性,以及对非常规超导体材料研究的未来展望。     

Improved thermoelectric performance in p-type Bi_(0.48)Sb_(1.52)Te_3 bulk material by adding MnSb_2Se_4

Bismuth telluride(Bi_2Te_3) based alloys, such as p-type Bi_(0.5)Sb_(1.5)Te_3, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi_(0.48)Sb_(1.52)Te_3 bulk materials with MnSb_2Se_4 were prepared using high-energy ball milling and spark plasma sintering(SPS) process. The addition of MnSb_2Se_4 to Bi_(0.48)Sb_(1.52)Te_3 increased the hole concentration while slightly decreasing the Seebeck coefficient, thus optimising the electrical transport properties of the bulk material. In addition, the second phases of MnSb_2Se_4 and Bi_(0.48)Sb_(1.52)Te_3 were observed in the Bi_(0.48)Sb_(1.52)Te_3 matrix. The nanoparticles in the semi-coherent second phase of MnSb_2Se_4 behaved as scattering centres for phonons,yielding a reduction in the lattice thermal conductivity. Substantial enhancement of the figure of merit, ZT, has been achieved for Bi_(0.48)Sb_(1.52)Te_3 by adding an Mn_(0.8)Cu_(0.2)Sb_2Se_4(2mol%) sample, for a wide range of temperatures, with a peak value of 1.43 at 375 K, corresponding to ~40% improvement over its Bi_(0.48)Sb_(1.52)Te_3 counterpart. Such enhancement of the thermoelectric(TE) performance of p-type Bi_2Te_3 based materials is believed to be advantageous for practical applications.     

Graphene integrated photodetectors and opto-electronic devices — a review

Graphene and other two-dimensional materials have recently emerged as promising candidates for next-generation,high-performance photonics. In this paper, the progress of research into photodetectors and other electro-optical devices based on graphene integrated silicon photonics is briefly reviewed. We discuss the performance metrics, photo-response mechanisms, and experimental results of the latest graphene photodetectors integrated with silicon photonics. We also lay out the unavoidable performance trade-offs in meeting the requirements of various applications. In addition, we describe other opto-electronic devices based on this idea. Integrating two-dimensional materials with a silicon platform provides new opportunities in advanced integrated photonics.     

Thermal properties of two-dimensional materials

Two-dimensional(2D) materials, such as graphene, phosphorene, and transition metal dichalcogenides(e.g., Mo S2 and WS2), have attracted a great deal of attention recently due to their extraordinary structural, mechanical, and physical properties. In particular, 2D materials have shown great potential for thermal management and thermoelectric energy generation. In this article, we review the recent advances in the study of thermal properties of 2D materials. We first review some important aspects in thermal conductivity of graphene and discuss the possibility to enhance the ultra-high thermal conductivity of graphene. Next, we discuss thermal conductivity of Mo S2 and the new strategy for thermal management of Mo S2 device. Subsequently, we discuss the anisotropic thermal properties of phosphorene. Finally, we review the application of 2D materials in thermal devices, including thermal rectifier and thermal modulator.     

Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors

Two-dimensional(2D) materials, such as graphene and Mo S2 related transition metal dichalcogenides(TMDC), have attracted much attention for their potential applications. Ferroelectrics, one of the special and traditional dielectric materials,possess a spontaneous electric polarization that can be reversed by the application of an external electric field. In recent years, a new type of device, combining 2D materials with ferroelectrics, has been fabricated. Many novel devices have been fabricated, such as low power consumption memory devices, highly sensitive photo-transistors, etc. using this technique of hybrid systems incorporating ferroelectrics and 2D materials. This paper reviews two types of devices based on field effect transistor(FET) structures with ferroelectric gate dielectric construction(termed Fe FET). One type of device is for logic applications, such as a graphene and TMDC Fe FET for fabricating memory units. Another device is for optoelectric applications, such as high performance phototransistors using a graphene p-n junction. Finally, we discuss the prospects for future applications of 2D material Fe FET.     

Thermo-e.m.f. anisotropy in magnetic films of Co and Ni and its comparison with anisotropy in electrical conductivity

Summary Films of cobalt and nickel were electroplated in the presence of an external magnetic-induction field. This resulted in the deposition of magnetic films which show, in addition to a magnetic anisotropy, also thermo-e.m.f. anisotropy. The latter is a new effect, not deriving from the anisotropy in electrical conduction deduced earlier by Kornevet al. on the basis of measurements of transmission coefficients of polarized RF field.     

激光产生蒸汽羽的干涉研究

 根据拍摄1.06 μm长脉冲钕玻璃激光与LY12铝靶耦合产生蒸汽羽的干涉分幅照片，测出在t<50 μs空气冲击波速度约为473 m/s而蒸汽羽阵面扩散速度约为162 m/s。运用蒸汽羽等离子体的有关热力学特性方程组，得到蒸汽羽等离子体的电子密度、电子温度、电离度和吸收系数的最大值分别为N_e≈3.1×10¹⁷ cm^-1，T≈6 096 K，η≈0.014，α_(1.06μm)≈0.03 cm^-1的结果。     

“海纹石”的矿物学及谱学特征研究

“海纹石”是具有蓝色条带的针钠钙石,是一种稀有的宝石材料,具有较好的市场前景。为查明其矿物学特征及成因,采用常规宝石学测试并结合X射线衍射(XRD)、傅里叶红外吸收光谱(FTIR)、拉曼光谱(Raman)、扫描电镜(SEM)及紫外-可见分光光度计(UV-Vis)等现代测试方法,对“海纹石”不同颜色部分的矿物成分及特征进行了深入分析。XRD,FTIR,Raman分析结果表明,“海纹石”的主要组成矿物为针钠钙石,并含有少量的方解石,与SEM分析结果较为一致。FTIR分析显示,“海纹石”白色部分在1 500 cm-1处出现一个明显的宽吸收带并伴有883和710 cm-1的吸收峰,表明含有少量方解石,而蓝色部分在该处没有此吸收。紫外可见吸收光谱分析显示蓝色部分在可见光区有640 nm宽吸收峰,表明可能含有微量元素Cu。“海纹石”白色和蓝色部分矿物组分的差异,表明两者可能形成于不同的地质环境。     

使用改进的形状优化方法设计高均匀度的超导MRI磁体

针对设计带铁磁的超导磁共振成像磁体,提出了一种确定类的优化算法来优化极靴的形状以达到匀场的目的。这种方法集合了灵敏度分析、形状优化的理论和有限元方法计算非线性铁磁材料极靴的配置,来改善两个极靴之间大体积成像区的磁场均匀度。需要指出的是,本优化方法不受极靴初始形状的限制,均可以快速收敛。我们通过一个紧凑型的1.2T双平面磁共振磁体,展示了这种方法。     

The giant enhancement of Fano-type resonance in a gain-assisted silicon slab array

Giant resonance enhancement is demonstrated to be due to the Fano interference in a grating waveguide composed of gain-assisted silicon slabs. The Fano mode is characterized by its ultra-narrow asymmetric spectrum, different from that of a pure electric or magnetic dipole. The simulation indicates that a sharp Fano-interfered lineshape is responsible for the giant resonance enhancement featuring the small-gain requirements.