Thickness induced magnetic anisotropic properties of Tb-Fe-Co thin films

The influence of Tb₂₅Fe₆₁Co₁₄ thin film thicknesses varying from 2 to 300 nm on the structural and magnetic properties has been systematically investigated by using of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, magnetization, and magneto-optic Kerr effect microscopy measurements. Thin film growth mechanism is pursued and controlled by ex-situ X-ray refractometry measurements. X-ray diffraction studies reveal that the Tb₂₅Fe₆₁Co₁₄ films are amorphous regardless of thin films thicknesses. The magnetic properties are found to be strongly related to thickness and preferred orientation. With an increase in film thickness, the easy axis of magnetization is reversed from in-plane to out-of-plane direction. The change in the easy axes direction also affects the remanence, coercivity and magnetic anisotropy values. The cause for the magnetic anisotropy direction change from in-plane to out-of-plane can be related to the preferred orientation of the thin film which depends on the large out-of-plane coercivity and plays an important role in deciding the easy axes direction of the films. According to our results, up to the 100 nm in-plane direction is dominated over the whole system under major Fe-Fe interaction region, after that point, the magnetic anisotropy direction change to the out-of-plane under major Tb-Fe/Tb-Co interaction region and preferred orientation dependent perpendicular magnetic anisotropic properties become more dominated with 2.7 kOe high coercive field values.     

Propagation properties of three-dimensional flattened Gaussian beams in uniaxially anisotropic crystals

Starting from the paraxial vectorial theory of beams propagating in uniaxially anisotropic media, the analytical propagation equations of three-dimensional flattened Gaussian beams (FGBs) in uniaxial crystals are derived and illustrated numerically. It is shown that, due to the anisotropy of crystals, the ordinary and extraordinary beams originated by incident FGBs propagate with different Rayleigh lengths, thus the linear polarization state and axial symmetry of incident FGBs do not remain during propagation in crystals.     

Ketene的218 nm光解的速度离子成像研究

用离子速度成像方法研究了乙烯酮分子在218 nm光解下的光解动力学,得到了光解产物CO的共振多光子电离谱,以及在不同振转态的角分布和平动能分布。得出如下结论：(1)CO(X~1∑~ )在v=0和v=1两个振动态都具有较热的转动激发,而且在v=0振动态的转动激发要比在v=1振动态的转动激发高；(2)乙烯酮分子在218nm光解的主要通道是产生CH_2((?)~1A_1) CO(X~1∑~ )产物通道,同时产生CH_2((?)~1B_1) CO(X~1∑~ )和CH_2((?)~3B_1) CO(X~1∑~ )产物通道也可能存在。(3)光解产物CO在不同振转态的各向异性参数β都大于零,对于不同的振动态观察到的现象没有明显地不同。     

Anisotropy of the dielectric function for wurtzite InN

A -plane InN film grown by molecular beam epitaxy on -plane sapphire substrate with an AlN nucleation layer and a GaN buffer was studied by spectroscopic ellipsometry. The data analysis yields both the ordinary and the extraordinary dielectric tensor components perpendicular and parallel to the optical axis, respectively. Strong optical anisotropy is demonstrated over the whole energy range from 0.72 up to 9.5 eV. The line shapes of the tensor components and the polarisation behaviour are in very good agreement with the results of recently published band structure and dielectric function calculations. Above the band gap, five van Hove singularities are evidenced from the ordinary component, while three are resolved from the extraordinary part. The polarisation dependence below 1 eV can be interpreted in terms of optical selection rules for three energetically split valence bands around the Γ-point of the Brillouin zone, similar to the well known behaviour of wurtzite GaN. This emphasises a band gap of hexagonal InN of about 0.7 eV.     

电解法制备棒状金纳米粒子溶胶

纳米材料的光学、磁学和电学性质依赖于粒子的尺寸和形状 .因此 ,合成过程中实现纳米粒子形貌的控制非常重要 [1,2].金溶胶在紫外-可见-近红外区的光吸收行为主要取决于金纳米粒子内部电子集体运动的等离子共振 ,其频率由粒子的尺寸所决定 .由于棒状金纳米粒子有横截直径与长度两个特征尺寸 .与大小同其横截直径相当的球形粒子相比 ,棒状粒子除了在 520 nm附近的吸收之外 (横截峰 ,SPt),还在长波方向有一个吸收峰 (长轴峰 ,SPl),其位置随"长径比"的增加而显著红移 [3,4].为了深入研究棒状金纳米粒子由尺寸和形状决定的各种特性及其应用 ,W…     

Trägerfixierte Organometallkomplexe. VI. Charakterisierung und Reaktivität Polysiloxan-gebundener (Ether-phosphan)ruthenium(II)-Komplexe

Supported Organometallic Complexes. VI. Characterization und Reactivity of Polysiloxane-Bound (Ether-phosphane)ruthenium(II) Complexes The ligands PhP(R)CH₂D [R = (CH₃O)₃Si(CH₂)₃; D = CH₂OCH₃ ( 1b ); D = tetrahydrofuryl ( 1c ); D = 1,4-dioxanyl ( 1d )] have been used to synthesize (ether-phosphane)ruthenium(II) complexes, which have been copolymerized with Si(OEt)₄ to yield polysiloxane-bound complexes. The monomers cis,cis,trans-Cl₂Ru(CO)₂(P ～ O)₂ ( 3b ) and HRuCl(CO)(P ～ O)₃ ( 5b ) were treated with NaBH₄ to form cis,cis,trans-H₂Ru(CO)₂(P ～ O)₂ ( 4b ) and H₂Ru(CO)(P ～ O)₃ ( 6b ), respectively (P ～ O = η¹-P coordinated; = η²- coordinated). Addition of Si(OEt)₄ and water leads to a base catalyzed hydrolysis of the silicon alkoxy-functions and a precipitation of the immobilized counterparts 4b ′, 6b ′. The polysiloxane matrix resulting by this new sol gel route has been described under quantitative aspects by ²⁹Si CP-MAS NMR spectroscopy. 4b ′ reacts with carbon monoxide to form Ru(CO)₃(P ～ O)₂ ( 7b ′). Chelated polysiloxane-bound complexes Cl₂Ru( )₂ ( 9c ′, d ′) and Cl₂Ru( )(P ～ O)₂ ( 10b ′, c ′) have been synthesized by the reaction of 1b–c with Cl₂Ru(PPh₃)₃ ( 8 ) followed by a copolymerization with Si(OEt)₄. The polysiloxane-bound complexes 9c ′, d ′ and 10b ′, c ′ react with one equivalent of CO to give Cl₂Ru(CO)( )(P ～ O) ( 12b ′– d ′). Excess CO leads to the all-trans-complexes Cl₂Ru(CO)₂(P ～ O)₂ ( 14b ′– d ′), which are thermally isomerized to cis,cis,trans- 3b ′– d ′. The chemical shift anisotropy of ³¹P in crystalline Cl₂Ru( )₂ ( 9a , R = Ph, D = CH₂OCH₃) has been compared with polysiloxane-bound 9d ′ indicating a non-rigid behavior of the complexes in the matrix.     

Etching of Silicon Nitride in CCl2F2, CHF3, SiF4, and SF6 Reactive Plasma: A Comparative Study

Silicon nitride is an important material layer in various types of microelectronic devices. Because of continuous integration of devices, patterning of this layer requires a highly selective and anisotropic etching process. Reactive ion etching is one of the most simple and popular plasma processes. The present work is an experimental analysis of primary etch characteristics in reactive ion etching of silicon nitride using chlorine- and/or fluorine-based organic and inorganic chemistries (CCl ₂ F ₂+O ₂ , CHF ₃+O ₂ , SiF ₄ +O₂, SF₆+O ₂ , and SF ₆+He) in order to obtain a simultaneous etch selectivity against polysilicon and silicon dioxide. A recipe, in CCl ₂ F ₂ /O ₂ plasma chemistry, which provides acceptable etch characteristics, along with a reasonable simultaneous selectivity against polysilicon and silicon dioxide, has been formulated.     

Effective parameter extraction of 3D metamaterial arrays via first-principles homogenization theory

In this paper, the effective parameters of diverse single-negative bulk structures are extracted in terms of first-principles homogenization techniques. Each metamaterial unit-cell is initially considered to be an electrically small scatterer, and under this assumption, its polarizabilities are derived via a dynamic approach. Also, the wavenumber of a normally incident propagating plane wave through the aforementioned single-negative structures is obtained by means of several algorithms. The retrieved polarizabilities of a single scatterer and the wavenumber of the periodic medium are, finally, incorporated in the homogenization formulas to compute the desired effective parameters. Numerical verification addressing the analysis of two different resonators and comparisons with the results of a popular homogenization method, reveals the merits of the proposed formulation and proves its overall efficiency.